SE403662B - Ljuskensligt material, sasom tryckplatar, innefattande en polymer eller sampolymer av en orto-, meta- eller para-vinylfenol - Google Patents

Ljuskensligt material, sasom tryckplatar, innefattande en polymer eller sampolymer av en orto-, meta- eller para-vinylfenol

Info

Publication number
SE403662B
SE403662B SE7306232A SE7306232A SE403662B SE 403662 B SE403662 B SE 403662B SE 7306232 A SE7306232 A SE 7306232A SE 7306232 A SE7306232 A SE 7306232A SE 403662 B SE403662 B SE 403662B
Authority
SE
Sweden
Prior art keywords
polymer
vinylphenol
ortho
para
meta
Prior art date
Application number
SE7306232A
Other languages
English (en)
Swedish (sv)
Inventor
M T J Peters
Original Assignee
Oce Van Der Grinten Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oce Van Der Grinten Nv filed Critical Oce Van Der Grinten Nv
Publication of SE403662B publication Critical patent/SE403662B/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/016—Diazonium salts or compounds
    • G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
    • G03F7/0212—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the diazo resins or the polymeric diazonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0381—Macromolecular compounds which are rendered insoluble or differentially wettable using a combination of a phenolic resin and a polyoxyethylene resin

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Printing Plates And Materials Therefor (AREA)
SE7306232A 1972-05-05 1973-05-03 Ljuskensligt material, sasom tryckplatar, innefattande en polymer eller sampolymer av en orto-, meta- eller para-vinylfenol SE403662B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2119172A GB1375461A (zh) 1972-05-05 1972-05-05

Publications (1)

Publication Number Publication Date
SE403662B true SE403662B (sv) 1978-08-28

Family

ID=10158714

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7306232A SE403662B (sv) 1972-05-05 1973-05-03 Ljuskensligt material, sasom tryckplatar, innefattande en polymer eller sampolymer av en orto-, meta- eller para-vinylfenol

Country Status (8)

Country Link
US (1) US3869292A (zh)
JP (1) JPS5629261B2 (zh)
DE (1) DE2322230C2 (zh)
FR (1) FR2183748B1 (zh)
GB (1) GB1375461A (zh)
IT (1) IT985848B (zh)
NL (1) NL164140C (zh)
SE (1) SE403662B (zh)

Families Citing this family (97)

* Cited by examiner, † Cited by third party
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JPS5241050B2 (zh) * 1974-03-27 1977-10-15
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US4009033A (en) * 1975-09-22 1977-02-22 International Business Machines Corporation High speed positive photoresist composition
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US4259434A (en) * 1977-10-24 1981-03-31 Fuji Photo Film Co., Ltd. Method for developing positive acting light-sensitive planographic printing plate
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US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
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DE3417607A1 (de) * 1983-05-12 1984-11-15 Hitachi Chemical Co., Ltd. Verfahren zur herstellung feiner muster
EP0135900A3 (en) * 1983-09-16 1986-06-11 Olin Hunt Specialty Products, Inc. Aqueous developable negative resist compositions
US4551409A (en) * 1983-11-07 1985-11-05 Shipley Company Inc. Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
US4631249A (en) * 1984-01-16 1986-12-23 Rohm & Haas Company Process for forming thermally stable negative images on surfaces utilizing polyglutarimide polymer in photoresist composition
US4569897A (en) * 1984-01-16 1986-02-11 Rohm And Haas Company Negative photoresist compositions with polyglutarimide polymer
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DE3421448A1 (de) * 1984-06-08 1985-12-12 Hoechst Ag, 6230 Frankfurt Perfluoralkylgruppen aufweisende polymere, sie enthaltende reproduktionsschichten und deren verwendung fuer den wasserlosen offsetdruck
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JPH0766184B2 (ja) * 1985-06-04 1995-07-19 住友化学工業株式会社 ポジ型フオトレジスト組成物
US5238774A (en) * 1985-08-07 1993-08-24 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition containing 1,2-quinonediazide compound, alkali-soluble resin and monooxymonocarboxylic acid ester solvent
US5215857A (en) * 1985-08-07 1993-06-01 Japan Synthetic Rubber Co., Ltd. 1,2-quinonediazide containing radiation-sensitive resin composition utilizing methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate or methyl 3-methoxypropionate as the solvent
JPS62123444A (ja) 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
ATE42419T1 (de) * 1985-08-12 1989-05-15 Hoechst Celanese Corp Verfahren zur herstellung negativer bilder aus einem positiv arbeitenden photoresist.
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US4931381A (en) * 1985-08-12 1990-06-05 Hoechst Celanese Corporation Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
DE3528930A1 (de) * 1985-08-13 1987-02-26 Hoechst Ag Polymere verbindungen und diese enthaltendes strahlungsempfindliches gemisch
DE3528929A1 (de) * 1985-08-13 1987-02-26 Hoechst Ag Strahlungsempfindliches gemisch, dieses enthaltendes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefbildern
US4758497A (en) * 1985-08-22 1988-07-19 Polychrome Corporation Photosensitive naphthoquinone diazide sulfonyl ester compounds for the fabrication of lithographic plates and photosensitive sheet construction with the compounds
US4948697A (en) * 1985-10-28 1990-08-14 Hoechst Celanese Corporation Positive photoresist with a solvent mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US4692398A (en) * 1985-10-28 1987-09-08 American Hoechst Corporation Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US4806458A (en) * 1985-10-28 1989-02-21 Hoechst Celanese Corporation Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate
US5039594A (en) * 1985-10-28 1991-08-13 Hoechst Celanese Corporation Positive photoresist containing a mixture of propylene glycol alkyl ethers and propylene glycol alkyl ether acetate
US4983490A (en) * 1985-10-28 1991-01-08 Hoechst Celanese Corporation Photoresist treating composition consisting of a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
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US4980264A (en) * 1985-12-17 1990-12-25 International Business Machines Corporation Photoresist compositions of controlled dissolution rate in alkaline developers
US4822716A (en) * 1985-12-27 1989-04-18 Kabushiki Kaisha Toshiba Polysilanes, Polysiloxanes and silicone resist materials containing these compounds
US4720445A (en) * 1986-02-18 1988-01-19 Allied Corporation Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
JPS62227143A (ja) * 1986-03-28 1987-10-06 Toshiba Corp 感光性組成物
JPH07113773B2 (ja) * 1986-07-04 1995-12-06 株式会社日立製作所 パタ−ン形成方法
US5300380A (en) * 1986-08-06 1994-04-05 Ciba-Geigy Corporation Process for the production of relief structures using a negative photoresist based on polyphenols and epoxy compounds or vinyl ethers
EP0255989B1 (de) * 1986-08-06 1990-11-22 Ciba-Geigy Ag Negativ-Photoresist auf Basis von Polyphenolen und Epoxidverbindungen oder Vinylethern
US4788127A (en) * 1986-11-17 1988-11-29 Eastman Kodak Company Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene
US5128230A (en) * 1986-12-23 1992-07-07 Shipley Company Inc. Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate
JPH07117747B2 (ja) * 1987-04-21 1995-12-18 富士写真フイルム株式会社 感光性組成物
JPS63265242A (ja) * 1987-04-23 1988-11-01 Fuji Photo Film Co Ltd 多色画像形成方法
JPS6435436A (en) * 1987-07-30 1989-02-06 Mitsubishi Chem Ind Photosensitive planographic printing plate
DE3729035A1 (de) * 1987-08-31 1989-03-09 Hoechst Ag Positiv arbeitendes lichtempfindliches gemisch und daraus hergestelltes photolithographisches aufzeichnungsmaterial
US4927956A (en) * 1987-09-16 1990-05-22 Hoechst Celanese Corporation 3,5-disubstituted-4-acetoxystyrene and process for its production
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DE3800617A1 (de) * 1988-01-12 1989-07-20 Hoechst Ag Elektrophotographisches aufzeichnungsmaterial
US4824758A (en) * 1988-01-25 1989-04-25 Hoechst Celanese Corp Photoresist compositions based on acetoxystyrene copolymers
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DE3820699A1 (de) * 1988-06-18 1989-12-21 Hoechst Ag Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
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DE4003025A1 (de) * 1990-02-02 1991-08-08 Hoechst Ag Strahlungsempfindliches gemisch, hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefaufzeichnungen
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US5853947A (en) * 1995-12-21 1998-12-29 Clariant Finance (Bvi) Limited Quinonediazide positive photoresist utilizing mixed solvent consisting essentially of 3-methyl-3-methoxy butanol and propylene glycol alkyl ether acetate
US5719004A (en) * 1996-08-07 1998-02-17 Clariant Finance (Bvi) Limited Positive photoresist composition containing a 2,4-dinitro-1-naphthol
US5763135A (en) * 1996-09-30 1998-06-09 Clariant Finance (Bvi) Limited Light sensitive composition containing an arylhydrazo dye
US6103443A (en) * 1997-11-21 2000-08-15 Clariant Finance Lmited Photoresist composition containing a novel polymer
DE19803564A1 (de) 1998-01-30 1999-08-05 Agfa Gevaert Ag Polymere mit Einheiten aus N-substituiertem Maleimid und deren Verwendung in strahlungsempfindlichen Gemischen
US6783914B1 (en) 2000-02-25 2004-08-31 Massachusetts Institute Of Technology Encapsulated inorganic resists
US6936398B2 (en) * 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
KR20140014217A (ko) 2011-03-10 2014-02-05 쓰리엠 이노베이티브 프로퍼티즈 컴파니 여과 매체
US8703385B2 (en) 2012-02-10 2014-04-22 3M Innovative Properties Company Photoresist composition
US8715904B2 (en) 2012-04-27 2014-05-06 3M Innovative Properties Company Photocurable composition
US8883402B2 (en) 2012-08-09 2014-11-11 3M Innovative Properties Company Photocurable compositions
WO2014025716A1 (en) 2012-08-09 2014-02-13 3M Innovative Properties Company Photocurable compositions

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Also Published As

Publication number Publication date
US3869292A (en) 1975-03-04
IT985848B (it) 1974-12-20
NL164140B (nl) 1980-06-16
DE2322230A1 (de) 1973-11-22
GB1375461A (zh) 1974-11-27
JPS5629261B2 (zh) 1981-07-07
FR2183748B1 (zh) 1977-02-11
DE2322230C2 (de) 1984-01-12
FR2183748A1 (zh) 1973-12-21
NL164140C (nl) 1980-11-17
NL7305260A (zh) 1973-11-07
JPS4948403A (zh) 1974-05-10

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