SE396505B - Sett att framstella en halvledaranordning med hogt pn-overgangsforhallande - Google Patents

Sett att framstella en halvledaranordning med hogt pn-overgangsforhallande

Info

Publication number
SE396505B
SE396505B SE7413672A SE7413672A SE396505B SE 396505 B SE396505 B SE 396505B SE 7413672 A SE7413672 A SE 7413672A SE 7413672 A SE7413672 A SE 7413672A SE 396505 B SE396505 B SE 396505B
Authority
SE
Sweden
Prior art keywords
manufacture
way
semiconductor device
transition ratio
transition
Prior art date
Application number
SE7413672A
Other languages
English (en)
Other versions
SE7413672L (sv
Inventor
S M Blumenfeld
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7413672L publication Critical patent/SE7413672L/xx
Publication of SE396505B publication Critical patent/SE396505B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electrodes Of Semiconductors (AREA)
SE7413672A 1973-10-30 1974-10-30 Sett att framstella en halvledaranordning med hogt pn-overgangsforhallande SE396505B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US411151A US3897277A (en) 1973-10-30 1973-10-30 High aspect ratio P-N junctions by the thermal gradient zone melting technique

Publications (2)

Publication Number Publication Date
SE7413672L SE7413672L (sv) 1975-05-02
SE396505B true SE396505B (sv) 1977-09-19

Family

ID=23627786

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7413672A SE396505B (sv) 1973-10-30 1974-10-30 Sett att framstella en halvledaranordning med hogt pn-overgangsforhallande

Country Status (6)

Country Link
US (1) US3897277A (sv)
JP (1) JPS50100974A (sv)
DE (1) DE2450901A1 (sv)
FR (1) FR2249438B1 (sv)
GB (1) GB1492557A (sv)
SE (1) SE396505B (sv)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1524854A (en) * 1974-11-01 1978-09-13 Gen Electric Semiconductors
US4041278A (en) * 1975-05-19 1977-08-09 General Electric Company Heating apparatus for temperature gradient zone melting
DE2621418C2 (de) * 1975-05-19 1981-12-17 General Electric Co., Schenectady, N.Y. Verfahren und Vorrichtung zum Dotieren von Halbleiterplättchen
US4001047A (en) * 1975-05-19 1977-01-04 General Electric Company Temperature gradient zone melting utilizing infrared radiation
US4006040A (en) * 1975-12-31 1977-02-01 General Electric Company Semiconductor device manufacture
US3998661A (en) * 1975-12-31 1976-12-21 General Electric Company Uniform migration of an annular shaped molten zone through a solid body
US3998662A (en) * 1975-12-31 1976-12-21 General Electric Company Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
US4012236A (en) * 1975-12-31 1977-03-15 General Electric Company Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation
US4040868A (en) * 1976-03-09 1977-08-09 General Electric Company Semiconductor device manufacture
US4033786A (en) * 1976-08-30 1977-07-05 General Electric Company Temperature gradient zone melting utilizing selective radiation coatings
US4076559A (en) * 1977-03-18 1978-02-28 General Electric Company Temperature gradient zone melting through an oxide layer
US4178192A (en) * 1978-09-13 1979-12-11 General Electric Company Promotion of surface film stability during initiation of thermal migration
US4159916A (en) * 1978-09-13 1979-07-03 General Electric Company Thermal migration of fine lined cross-hatched patterns
US4159213A (en) * 1978-09-13 1979-06-26 General Electric Company Straight, uniform thermalmigration of fine lines
US4170491A (en) * 1978-12-07 1979-10-09 General Electric Company Near-surface thermal gradient enhancement with opaque coatings
US4224594A (en) * 1978-12-22 1980-09-23 General Electric Company Deep diode magnetoresistor
US4257824A (en) * 1979-07-31 1981-03-24 Bell Telephone Laboratories, Incorporated Photo-induced temperature gradient zone melting
US4398974A (en) * 1982-04-09 1983-08-16 Hughes Aircraft Company Temperature gradient zone melting process employing a buffer layer
EP0105347B1 (en) * 1982-04-09 1987-01-28 Hughes Aircraft Company Temperature gradient zone melting process and apparatus
JPS59500643A (ja) * 1982-04-09 1984-04-12 ヒユ−ズ・エアクラフト・カンパニ− 温度勾配ゾ−ン熔融プロセス、および装置
US4523067A (en) * 1982-04-09 1985-06-11 Hughes Aircraft Company Temperature gradient zone melting apparatus
DE3276036D1 (en) * 1982-08-24 1987-05-14 Bbc Brown Boveri & Cie Process for the thermomigration of liquid phases, and apparatus for carrying out this process
US4585493A (en) * 1984-06-26 1986-04-29 General Electric Company Grain-driven zone-melting of silicon films on insulating substrates
DE10302653A1 (de) * 2003-01-20 2004-08-19 Htm Reetz Gmbh Vorrichtung zur Thermomigration

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
NL231940A (sv) * 1956-05-15
CH396228A (de) * 1962-05-29 1965-07-31 Siemens Ag Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium
US3544395A (en) * 1965-11-30 1970-12-01 Matsushita Electric Ind Co Ltd Silicon p-n junction device and method of making the same
JPS4919017B1 (sv) * 1968-09-30 1974-05-14

Also Published As

Publication number Publication date
SE7413672L (sv) 1975-05-02
FR2249438A1 (sv) 1975-05-23
DE2450901A1 (de) 1975-05-07
US3897277A (en) 1975-07-29
FR2249438B1 (sv) 1978-09-22
GB1492557A (en) 1977-11-23
JPS50100974A (sv) 1975-08-11

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