SE391606B - Transistor innefattande ett forhallandevis lett dopat parti i kollektorzonen i nerheten av baszonen, varvid nemnda parti har en vesentligen linjert tillvexande storemneskoncentration over en av huvuddel av sin tjockl - Google Patents
Transistor innefattande ett forhallandevis lett dopat parti i kollektorzonen i nerheten av baszonen, varvid nemnda parti har en vesentligen linjert tillvexande storemneskoncentration over en av huvuddel av sin tjocklInfo
- Publication number
- SE391606B SE391606B SE7312357A SE7312357A SE391606B SE 391606 B SE391606 B SE 391606B SE 7312357 A SE7312357 A SE 7312357A SE 7312357 A SE7312357 A SE 7312357A SE 391606 B SE391606 B SE 391606B
- Authority
- SE
- Sweden
- Prior art keywords
- linened
- significantly
- lightly doped
- transistor including
- concentration over
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29097672A | 1972-09-21 | 1972-09-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE391606B true SE391606B (sv) | 1977-02-21 |
Family
ID=23118293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7312357A SE391606B (sv) | 1972-09-21 | 1973-09-11 | Transistor innefattande ett forhallandevis lett dopat parti i kollektorzonen i nerheten av baszonen, varvid nemnda parti har en vesentligen linjert tillvexande storemneskoncentration over en av huvuddel av sin tjockl |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS4971873A (et) |
BE (1) | BE804932A (et) |
CA (1) | CA978281A (et) |
DE (1) | DE2347067A1 (et) |
FR (1) | FR2200625B1 (et) |
GB (1) | GB1414066A (et) |
IT (1) | IT993337B (et) |
NL (1) | NL7312775A (et) |
SE (1) | SE391606B (et) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2543736B1 (fr) * | 1983-03-31 | 1986-05-02 | Thomson Csf | Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture |
JP2559800B2 (ja) * | 1988-03-25 | 1996-12-04 | 株式会社宇宙通信基礎技術研究所 | トランジスタの評価方法 |
-
1973
- 1973-03-30 CA CA167,643A patent/CA978281A/en not_active Expired
- 1973-09-11 SE SE7312357A patent/SE391606B/xx unknown
- 1973-09-17 BE BE135714A patent/BE804932A/xx unknown
- 1973-09-17 GB GB4346773A patent/GB1414066A/en not_active Expired
- 1973-09-17 NL NL7312775A patent/NL7312775A/xx not_active Application Discontinuation
- 1973-09-19 DE DE19732347067 patent/DE2347067A1/de active Pending
- 1973-09-20 IT IT2917773A patent/IT993337B/it active
- 1973-09-20 FR FR7333797A patent/FR2200625B1/fr not_active Expired
- 1973-09-21 JP JP10607473A patent/JPS4971873A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
IT993337B (it) | 1975-09-30 |
BE804932A (fr) | 1974-01-16 |
JPS4971873A (et) | 1974-07-11 |
CA978281A (en) | 1975-11-18 |
FR2200625B1 (et) | 1979-08-31 |
DE2347067A1 (de) | 1974-03-28 |
FR2200625A1 (et) | 1974-04-19 |
NL7312775A (et) | 1974-03-25 |
GB1414066A (en) | 1975-11-12 |
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