SE385752B - Integrerad krets med felteffekttransistorer - Google Patents

Integrerad krets med felteffekttransistorer

Info

Publication number
SE385752B
SE385752B SE7400358A SE7400358A SE385752B SE 385752 B SE385752 B SE 385752B SE 7400358 A SE7400358 A SE 7400358A SE 7400358 A SE7400358 A SE 7400358A SE 385752 B SE385752 B SE 385752B
Authority
SE
Sweden
Prior art keywords
integrated circuit
power transistors
field power
transistors
field
Prior art date
Application number
SE7400358A
Other languages
English (en)
Swedish (sv)
Inventor
H Schlotterer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE385752B publication Critical patent/SE385752B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
SE7400358A 1973-01-26 1974-01-11 Integrerad krets med felteffekttransistorer SE385752B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732303916 DE2303916A1 (de) 1973-01-26 1973-01-26 Integrierte schaltung mit feldeffekttransistoren

Publications (1)

Publication Number Publication Date
SE385752B true SE385752B (sv) 1976-07-19

Family

ID=5870074

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7400358A SE385752B (sv) 1973-01-26 1974-01-11 Integrerad krets med felteffekttransistorer

Country Status (12)

Country Link
JP (1) JPS49110281A (zh)
AT (1) AT339375B (zh)
BE (1) BE810156A (zh)
CA (1) CA1013482A (zh)
CH (1) CH564850A5 (zh)
DE (1) DE2303916A1 (zh)
FR (1) FR2215704B1 (zh)
GB (1) GB1413900A (zh)
IT (1) IT1007011B (zh)
LU (1) LU69236A1 (zh)
NL (1) NL7400934A (zh)
SE (1) SE385752B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080783A (zh) * 1973-11-14 1975-07-01
JPS5810118B2 (ja) * 1974-08-28 1983-02-24 株式会社東芝 カイヘイブタ ノ アンゼンソウチ
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit

Also Published As

Publication number Publication date
CA1013482A (en) 1977-07-05
LU69236A1 (zh) 1974-04-10
NL7400934A (zh) 1974-07-30
CH564850A5 (zh) 1975-07-31
GB1413900A (en) 1975-11-12
DE2303916A1 (de) 1974-08-01
BE810156A (fr) 1974-05-16
JPS49110281A (zh) 1974-10-21
FR2215704A1 (zh) 1974-08-23
FR2215704B1 (zh) 1977-08-26
IT1007011B (it) 1976-10-30
AT339375B (de) 1977-10-10
ATA1051373A (de) 1977-02-15

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