SE384598B - THYRISTOR INCLUDING A TREND CURRENT ASSISTANCE DEVICE - Google Patents

THYRISTOR INCLUDING A TREND CURRENT ASSISTANCE DEVICE

Info

Publication number
SE384598B
SE384598B SE7310784A SE7310784A SE384598B SE 384598 B SE384598 B SE 384598B SE 7310784 A SE7310784 A SE 7310784A SE 7310784 A SE7310784 A SE 7310784A SE 384598 B SE384598 B SE 384598B
Authority
SE
Sweden
Prior art keywords
assistance device
current assistance
thyristor including
trend current
trend
Prior art date
Application number
SE7310784A
Other languages
Swedish (sv)
Inventor
K P Frohmader
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE384598B publication Critical patent/SE384598B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
SE7310784A 1972-08-04 1973-08-06 THYRISTOR INCLUDING A TREND CURRENT ASSISTANCE DEVICE SE384598B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722238564 DE2238564C3 (en) 1972-08-04 1972-08-04 Thyristor

Publications (1)

Publication Number Publication Date
SE384598B true SE384598B (en) 1976-05-10

Family

ID=5852732

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7310784A SE384598B (en) 1972-08-04 1973-08-06 THYRISTOR INCLUDING A TREND CURRENT ASSISTANCE DEVICE

Country Status (8)

Country Link
JP (1) JPS4953782A (en)
BE (1) BE803196A (en)
CH (1) CH554074A (en)
DE (1) DE2238564C3 (en)
FR (1) FR2195073B1 (en)
GB (1) GB1436411A (en)
NL (1) NL7310532A (en)
SE (1) SE384598B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109372A (en) * 1980-12-25 1982-07-07 Mitsubishi Electric Corp Semiconductor device
JPS57109373A (en) * 1980-12-25 1982-07-07 Mitsubishi Electric Corp Semiconductor device
JPS6029885Y2 (en) * 1980-12-28 1985-09-09 株式会社シマノ fishing rod
DE3112940A1 (en) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH CONNECTABLE INTERNAL POWER AMPLIFIER AND METHOD FOR ITS OPERATION
JPS5927571A (en) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
IE840248L (en) * 1983-02-18 1984-08-18 Westinghouse Electric Corp Light activated power transistor
US4514898A (en) * 1983-02-18 1985-05-07 Westinghouse Electric Corp. Method of making a self protected thyristor
US4516315A (en) * 1983-05-09 1985-05-14 Westinghouse Electric Corp. Method of making a self-protected thyristor
EP0129702B1 (en) * 1983-05-26 1987-08-05 General Electric Company Voltage breakover protected thyristor having field-containing layer in avalanche voltage breakover zone
DE3931589A1 (en) * 1989-09-22 1991-04-04 Bosch Gmbh Robert SEMICONDUCTOR SWITCHING ELEMENT
EP0970525B1 (en) * 1997-01-31 2003-05-21 Infineon Technologies AG Asymmetrical thyristor

Also Published As

Publication number Publication date
GB1436411A (en) 1976-05-19
JPS4953782A (en) 1974-05-24
FR2195073A1 (en) 1974-03-01
DE2238564A1 (en) 1974-02-21
DE2238564B2 (en) 1980-06-12
FR2195073B1 (en) 1978-03-17
DE2238564C3 (en) 1981-02-19
BE803196A (en) 1973-12-03
CH554074A (en) 1974-09-13
NL7310532A (en) 1974-02-06

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