CH541870A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- CH541870A CH541870A CH1440672A CH1440672A CH541870A CH 541870 A CH541870 A CH 541870A CH 1440672 A CH1440672 A CH 1440672A CH 1440672 A CH1440672 A CH 1440672A CH 541870 A CH541870 A CH 541870A
- Authority
- CH
- Switzerland
- Prior art keywords
- thyristor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2201041A DE2201041C3 (en) | 1972-01-11 | 1972-01-11 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH541870A true CH541870A (en) | 1973-09-15 |
Family
ID=5832681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1440672A CH541870A (en) | 1972-01-11 | 1972-10-03 | Thyristor |
Country Status (8)
| Country | Link |
|---|---|
| JP (2) | JPS5325479B2 (en) |
| CH (1) | CH541870A (en) |
| DE (1) | DE2201041C3 (en) |
| FR (1) | FR2167537B1 (en) |
| GB (1) | GB1377420A (en) |
| IT (1) | IT972621B (en) |
| NL (1) | NL7217455A (en) |
| SE (1) | SE390084B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142983A (en) * | 1975-06-04 | 1976-12-08 | Hitachi Ltd | Scr |
| DE2843960A1 (en) * | 1978-10-09 | 1980-04-10 | Licentia Gmbh | STOEROTENTIAL COMPENSATED THYRISTOR WITH AT LEAST FOUR ZONES OF DIFFERENT CONDUCTIVITY TYPES |
| DE2945347A1 (en) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | THYRISTOR WITH AUXILIARY ELECTRODE AND METHOD FOR ITS OPERATION |
| DE2945391A1 (en) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Gate turn-off type thyristor - has base inlaid emitter zones for shorting base to emitters using FET gate drive |
| DE3118317A1 (en) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | THYRISTOR WITH AUXILIARY ELECTRODE AND SHORT TERMINAL AREAS AND METHOD FOR ITS OPERATION |
-
1972
- 1972-01-11 DE DE2201041A patent/DE2201041C3/en not_active Expired
- 1972-10-03 CH CH1440672A patent/CH541870A/en not_active IP Right Cessation
- 1972-11-23 GB GB5413272A patent/GB1377420A/en not_active Expired
- 1972-12-18 FR FR7245020A patent/FR2167537B1/fr not_active Expired
- 1972-12-20 IT IT33235/72A patent/IT972621B/en active
- 1972-12-21 NL NL7217455A patent/NL7217455A/xx unknown
-
1973
- 1973-01-11 JP JP562673A patent/JPS5325479B2/ja not_active Expired
- 1973-01-11 SE SE7300366A patent/SE390084B/en unknown
-
1977
- 1977-12-09 JP JP14867277A patent/JPS5386182A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2167537B1 (en) | 1978-01-13 |
| JPS5347673B2 (en) | 1978-12-22 |
| DE2201041B2 (en) | 1979-11-29 |
| JPS5325479B2 (en) | 1978-07-27 |
| GB1377420A (en) | 1974-12-18 |
| SE7300366L (en) | 1973-07-12 |
| JPS4881488A (en) | 1973-10-31 |
| JPS5386182A (en) | 1978-07-29 |
| IT972621B (en) | 1974-05-31 |
| FR2167537A1 (en) | 1973-08-24 |
| DE2201041A1 (en) | 1973-07-19 |
| DE2201041C3 (en) | 1980-08-07 |
| SE390084B (en) | 1976-11-29 |
| NL7217455A (en) | 1973-07-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |