CH542515A - Thyristor - Google Patents

Thyristor

Info

Publication number
CH542515A
CH542515A CH376672A CH376672A CH542515A CH 542515 A CH542515 A CH 542515A CH 376672 A CH376672 A CH 376672A CH 376672 A CH376672 A CH 376672A CH 542515 A CH542515 A CH 542515A
Authority
CH
Switzerland
Prior art keywords
thyristor
Prior art date
Application number
CH376672A
Other languages
German (de)
Inventor
Jozef Dr Cornu
Andre Dr Jaecklin
Manfred Dr Lietz
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH376672A priority Critical patent/CH542515A/en
Priority to DE19722215982 priority patent/DE2215982C3/en
Priority to FR7308672A priority patent/FR2175909B1/fr
Publication of CH542515A publication Critical patent/CH542515A/en
Priority to US05/529,955 priority patent/US3943549A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CH376672A 1972-03-15 1972-03-15 Thyristor CH542515A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CH376672A CH542515A (en) 1972-03-15 1972-03-15 Thyristor
DE19722215982 DE2215982C3 (en) 1972-03-15 1972-04-01 Thyristor triode
FR7308672A FR2175909B1 (en) 1972-03-15 1973-03-12
US05/529,955 US3943549A (en) 1972-03-15 1974-12-05 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH376672A CH542515A (en) 1972-03-15 1972-03-15 Thyristor

Publications (1)

Publication Number Publication Date
CH542515A true CH542515A (en) 1973-09-30

Family

ID=4263029

Family Applications (1)

Application Number Title Priority Date Filing Date
CH376672A CH542515A (en) 1972-03-15 1972-03-15 Thyristor

Country Status (3)

Country Link
CH (1) CH542515A (en)
DE (1) DE2215982C3 (en)
FR (1) FR2175909B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002840A1 (en) * 1977-12-21 1979-07-11 BBC Aktiengesellschaft Brown, Boveri & Cie. Cathode-sided controlled thyristor having an anode layer comprising two adjacent regions of different conductivity

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3037316C2 (en) * 1979-10-03 1982-12-23 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Process for the production of power thyristors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002840A1 (en) * 1977-12-21 1979-07-11 BBC Aktiengesellschaft Brown, Boveri & Cie. Cathode-sided controlled thyristor having an anode layer comprising two adjacent regions of different conductivity

Also Published As

Publication number Publication date
DE2215982B2 (en) 1978-05-03
DE2215982C3 (en) 1979-01-04
DE2215982A1 (en) 1973-09-27
FR2175909B1 (en) 1978-04-14
FR2175909A1 (en) 1973-10-26

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Legal Events

Date Code Title Description
PL Patent ceased