CH542515A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- CH542515A CH542515A CH376672A CH376672A CH542515A CH 542515 A CH542515 A CH 542515A CH 376672 A CH376672 A CH 376672A CH 376672 A CH376672 A CH 376672A CH 542515 A CH542515 A CH 542515A
- Authority
- CH
- Switzerland
- Prior art keywords
- thyristor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH376672A CH542515A (en) | 1972-03-15 | 1972-03-15 | Thyristor |
DE19722215982 DE2215982C3 (en) | 1972-03-15 | 1972-04-01 | Thyristor triode |
FR7308672A FR2175909B1 (en) | 1972-03-15 | 1973-03-12 | |
US05/529,955 US3943549A (en) | 1972-03-15 | 1974-12-05 | Thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH376672A CH542515A (en) | 1972-03-15 | 1972-03-15 | Thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
CH542515A true CH542515A (en) | 1973-09-30 |
Family
ID=4263029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH376672A CH542515A (en) | 1972-03-15 | 1972-03-15 | Thyristor |
Country Status (3)
Country | Link |
---|---|
CH (1) | CH542515A (en) |
DE (1) | DE2215982C3 (en) |
FR (1) | FR2175909B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0002840A1 (en) * | 1977-12-21 | 1979-07-11 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Cathode-sided controlled thyristor having an anode layer comprising two adjacent regions of different conductivity |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3037316C2 (en) * | 1979-10-03 | 1982-12-23 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Process for the production of power thyristors |
-
1972
- 1972-03-15 CH CH376672A patent/CH542515A/en not_active IP Right Cessation
- 1972-04-01 DE DE19722215982 patent/DE2215982C3/en not_active Expired
-
1973
- 1973-03-12 FR FR7308672A patent/FR2175909B1/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0002840A1 (en) * | 1977-12-21 | 1979-07-11 | BBC Aktiengesellschaft Brown, Boveri & Cie. | Cathode-sided controlled thyristor having an anode layer comprising two adjacent regions of different conductivity |
Also Published As
Publication number | Publication date |
---|---|
DE2215982B2 (en) | 1978-05-03 |
DE2215982C3 (en) | 1979-01-04 |
DE2215982A1 (en) | 1973-09-27 |
FR2175909B1 (en) | 1978-04-14 |
FR2175909A1 (en) | 1973-10-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |