SE389226B - THYRISTOR - Google Patents
THYRISTORInfo
- Publication number
- SE389226B SE389226B SE7313032A SE7313032A SE389226B SE 389226 B SE389226 B SE 389226B SE 7313032 A SE7313032 A SE 7313032A SE 7313032 A SE7313032 A SE 7313032A SE 389226 B SE389226 B SE 389226B
- Authority
- SE
- Sweden
- Prior art keywords
- thyristor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19722246979 DE2246979C3 (en) | 1972-09-25 | Thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
SE389226B true SE389226B (en) | 1976-10-25 |
Family
ID=5857313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7313032A SE389226B (en) | 1972-09-25 | 1973-09-25 | THYRISTOR |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS4971877A (en) |
FR (1) | FR2200627B1 (en) |
GB (1) | GB1448150A (en) |
IT (1) | IT993265B (en) |
NL (1) | NL7310720A (en) |
SE (1) | SE389226B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS584467B2 (en) * | 1975-05-23 | 1983-01-26 | 三菱電機株式会社 | Hand tie souchi |
DE3917100A1 (en) * | 1989-05-26 | 1990-11-29 | Eupec Gmbh & Co Kg | THYRISTOR |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4118987Y1 (en) * | 1965-07-16 | 1966-09-05 | ||
US3577046A (en) * | 1969-03-21 | 1971-05-04 | Gen Electric | Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon |
-
1973
- 1973-08-02 NL NL7310720A patent/NL7310720A/xx unknown
- 1973-09-18 IT IT2901073A patent/IT993265B/en active
- 1973-09-20 GB GB4417873A patent/GB1448150A/en not_active Expired
- 1973-09-21 JP JP10681273A patent/JPS4971877A/ja active Pending
- 1973-09-24 FR FR7334106A patent/FR2200627B1/fr not_active Expired
- 1973-09-25 SE SE7313032A patent/SE389226B/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPS4971877A (en) | 1974-07-11 |
FR2200627A1 (en) | 1974-04-19 |
NL7310720A (en) | 1974-03-27 |
GB1448150A (en) | 1976-09-02 |
DE2246979A1 (en) | 1974-04-04 |
FR2200627B1 (en) | 1978-08-04 |
IT993265B (en) | 1975-09-30 |
DE2246979B2 (en) | 1977-04-14 |
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