SE382709B - Kapacitivt matrisminne, der varje sasom en tvapol uppbyggt korsningspunktselement innefattar en transistor. - Google Patents

Kapacitivt matrisminne, der varje sasom en tvapol uppbyggt korsningspunktselement innefattar en transistor.

Info

Publication number
SE382709B
SE382709B SE7115035A SE1503571A SE382709B SE 382709 B SE382709 B SE 382709B SE 7115035 A SE7115035 A SE 7115035A SE 1503571 A SE1503571 A SE 1503571A SE 382709 B SE382709 B SE 382709B
Authority
SE
Sweden
Prior art keywords
everything
transistor
element includes
crossing point
point element
Prior art date
Application number
SE7115035A
Other languages
English (en)
Swedish (sv)
Inventor
W G Kasperkovitz
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE382709B publication Critical patent/SE382709B/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Static Random-Access Memory (AREA)
  • Bipolar Integrated Circuits (AREA)
SE7115035A 1970-11-27 1971-11-24 Kapacitivt matrisminne, der varje sasom en tvapol uppbyggt korsningspunktselement innefattar en transistor. SE382709B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7017342.A NL165601C (nl) 1970-11-27 1970-11-27 Geintegreerd capacitief matrixgeheugen.

Publications (1)

Publication Number Publication Date
SE382709B true SE382709B (sv) 1976-02-09

Family

ID=19811655

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7115035A SE382709B (sv) 1970-11-27 1971-11-24 Kapacitivt matrisminne, der varje sasom en tvapol uppbyggt korsningspunktselement innefattar en transistor.

Country Status (8)

Country Link
US (1) US3761900A (en:Method)
JP (1) JPS5244182B1 (en:Method)
CA (1) CA979526A (en:Method)
FR (1) FR2115442B1 (en:Method)
GB (1) GB1375993A (en:Method)
IT (1) IT941288B (en:Method)
NL (1) NL165601C (en:Method)
SE (1) SE382709B (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434227U (en:Method) * 1977-08-10 1979-03-06
US4621205A (en) * 1984-01-16 1986-11-04 Hewlett-Packard Company Method and apparatus for reducing varactor noise

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI1A (fi) * 1842-06-29 Blåsmaskiner av järn
US3490007A (en) * 1965-12-24 1970-01-13 Nippon Electric Co Associative memory elements using field-effect transistors
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3532945A (en) * 1967-08-30 1970-10-06 Fairchild Camera Instr Co Semiconductor devices having a low capacitance junction
JPS4844581B1 (en:Method) * 1969-03-15 1973-12-25
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage

Also Published As

Publication number Publication date
NL7017342A (en:Method) 1972-05-30
CA979526A (en) 1975-12-09
NL165601C (nl) 1981-04-15
FR2115442A1 (en:Method) 1972-07-07
FR2115442B1 (en:Method) 1976-12-03
US3761900A (en) 1973-09-25
IT941288B (it) 1973-03-01
DE2155263A1 (de) 1972-06-08
NL165601B (nl) 1980-11-17
DE2155263B2 (de) 1977-03-03
GB1375993A (en) 1974-12-04
JPS5244182B1 (en:Method) 1977-11-05

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