SE369987B - - Google Patents

Info

Publication number
SE369987B
SE369987B SE17310/70A SE1731070A SE369987B SE 369987 B SE369987 B SE 369987B SE 17310/70 A SE17310/70 A SE 17310/70A SE 1731070 A SE1731070 A SE 1731070A SE 369987 B SE369987 B SE 369987B
Authority
SE
Sweden
Application number
SE17310/70A
Inventor
A Semichon
Georges J Saint
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE369987B publication Critical patent/SE369987B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Amplifiers (AREA)
SE17310/70A 1969-12-24 1970-12-21 SE369987B (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6944987A FR2077474B1 (fr) 1969-12-24 1969-12-24

Publications (1)

Publication Number Publication Date
SE369987B true SE369987B (fr) 1974-09-23

Family

ID=9045210

Family Applications (1)

Application Number Title Priority Date Filing Date
SE17310/70A SE369987B (fr) 1969-12-24 1970-12-21

Country Status (8)

Country Link
US (1) US3739243A (fr)
JP (1) JPS4824670B1 (fr)
BE (1) BE760706A (fr)
DE (1) DE2061689C3 (fr)
FR (1) FR2077474B1 (fr)
GB (1) GB1330479A (fr)
NL (1) NL7018546A (fr)
SE (1) SE369987B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1015069A (en) * 1974-04-01 1977-08-02 Chung K. Kim Dynamic negative resistance diode
US3921192A (en) * 1974-05-28 1975-11-18 Gen Electric Avalanche diode
US3964084A (en) * 1974-06-12 1976-06-15 Bell Telephone Laboratories, Incorporated Schottky barrier diode contacts
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
FR2420846A1 (fr) * 1978-03-21 1979-10-19 Thomson Csf Structure semi-conductrice a avalanche comportant une troisieme electrode
DE4319211B4 (de) * 1993-06-09 2004-04-15 Daimlerchrysler Ag Tunnel-BARITT-Diode
DE19526739C3 (de) * 1995-07-21 2001-03-29 Gen Semiconductor Ireland Macr Halbleiterbauelement
DE19930781B4 (de) * 1999-07-03 2006-10-12 Robert Bosch Gmbh Diode mit Metall-Halbleiterkontakt und Verfahren zu ihrer Herstellung
CN1181561C (zh) * 2000-03-03 2004-12-22 松下电器产业株式会社 半导体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1123389A (en) * 1965-12-20 1968-08-14 Matsushita Electronics Corp A solid state microwave oscillating device

Also Published As

Publication number Publication date
FR2077474A1 (fr) 1971-10-29
JPS4824670B1 (fr) 1973-07-23
GB1330479A (en) 1973-09-19
DE2061689C3 (de) 1978-08-17
BE760706A (nl) 1971-06-22
DE2061689A1 (de) 1971-07-01
NL7018546A (fr) 1971-06-28
FR2077474B1 (fr) 1973-10-19
US3739243A (en) 1973-06-12
DE2061689B2 (de) 1977-12-08

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