NL7018546A - - Google Patents

Info

Publication number
NL7018546A
NL7018546A NL7018546A NL7018546A NL7018546A NL 7018546 A NL7018546 A NL 7018546A NL 7018546 A NL7018546 A NL 7018546A NL 7018546 A NL7018546 A NL 7018546A NL 7018546 A NL7018546 A NL 7018546A
Authority
NL
Netherlands
Application number
NL7018546A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7018546A publication Critical patent/NL7018546A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/88Tunnel-effect diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Amplifiers (AREA)
NL7018546A 1969-12-24 1970-12-19 NL7018546A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6944987A FR2077474B1 (xx) 1969-12-24 1969-12-24

Publications (1)

Publication Number Publication Date
NL7018546A true NL7018546A (xx) 1971-06-28

Family

ID=9045210

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7018546A NL7018546A (xx) 1969-12-24 1970-12-19

Country Status (8)

Country Link
US (1) US3739243A (xx)
JP (1) JPS4824670B1 (xx)
BE (1) BE760706A (xx)
DE (1) DE2061689C3 (xx)
FR (1) FR2077474B1 (xx)
GB (1) GB1330479A (xx)
NL (1) NL7018546A (xx)
SE (1) SE369987B (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1015069A (en) * 1974-04-01 1977-08-02 Chung K. Kim Dynamic negative resistance diode
US3921192A (en) * 1974-05-28 1975-11-18 Gen Electric Avalanche diode
US3964084A (en) * 1974-06-12 1976-06-15 Bell Telephone Laboratories, Incorporated Schottky barrier diode contacts
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
FR2420846A1 (fr) * 1978-03-21 1979-10-19 Thomson Csf Structure semi-conductrice a avalanche comportant une troisieme electrode
DE4319211B4 (de) * 1993-06-09 2004-04-15 Daimlerchrysler Ag Tunnel-BARITT-Diode
DE19526739C3 (de) * 1995-07-21 2001-03-29 Gen Semiconductor Ireland Macr Halbleiterbauelement
DE19930781B4 (de) * 1999-07-03 2006-10-12 Robert Bosch Gmbh Diode mit Metall-Halbleiterkontakt und Verfahren zu ihrer Herstellung
ATE355615T1 (de) * 2000-03-03 2006-03-15 Matsushita Electric Ind Co Ltd Halbleiteranordnung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1123389A (en) * 1965-12-20 1968-08-14 Matsushita Electronics Corp A solid state microwave oscillating device

Also Published As

Publication number Publication date
BE760706A (nl) 1971-06-22
US3739243A (en) 1973-06-12
SE369987B (xx) 1974-09-23
DE2061689B2 (de) 1977-12-08
GB1330479A (en) 1973-09-19
DE2061689C3 (de) 1978-08-17
FR2077474B1 (xx) 1973-10-19
FR2077474A1 (xx) 1971-10-29
DE2061689A1 (de) 1971-07-01
JPS4824670B1 (xx) 1973-07-23

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