SE365655B - - Google Patents

Info

Publication number
SE365655B
SE365655B SE02101/71A SE210171A SE365655B SE 365655 B SE365655 B SE 365655B SE 02101/71 A SE02101/71 A SE 02101/71A SE 210171 A SE210171 A SE 210171A SE 365655 B SE365655 B SE 365655B
Authority
SE
Sweden
Application number
SE02101/71A
Inventor
J Nakata
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of SE365655B publication Critical patent/SE365655B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
SE02101/71A 1970-02-20 1971-02-18 SE365655B (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45014600A JPS508315B1 (fr) 1970-02-20 1970-02-20

Publications (1)

Publication Number Publication Date
SE365655B true SE365655B (fr) 1974-03-25

Family

ID=11865667

Family Applications (1)

Application Number Title Priority Date Filing Date
SE02101/71A SE365655B (fr) 1970-02-20 1971-02-18

Country Status (6)

Country Link
US (1) US3697833A (fr)
JP (1) JPS508315B1 (fr)
DE (1) DE2107564B2 (fr)
FR (1) FR2091966B1 (fr)
GB (1) GB1301245A (fr)
SE (1) SE365655B (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021346B1 (fr) * 1970-08-14 1975-07-22
FR2175574B1 (fr) * 1972-03-14 1975-08-29 Radiotechnique Compelec
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
US3893153A (en) * 1974-01-10 1975-07-01 Westinghouse Electric Corp Light activated thyristor with high di/dt capability
CH567803A5 (fr) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
JPS50123282A (fr) * 1974-03-15 1975-09-27
JPS5718348B2 (fr) * 1974-06-07 1982-04-16
JPS5723426B2 (fr) * 1974-06-11 1982-05-18
DE2458401C2 (de) * 1974-12-10 1982-06-24 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
US4167746A (en) * 1975-03-03 1979-09-11 General Electric Company Radiation triggered thyristor with light focussing guide
DE2538549C2 (de) * 1975-08-29 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
DE2549563C2 (de) * 1975-11-05 1983-07-14 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lichtzündbarer Thyristor
US4122480A (en) * 1975-11-05 1978-10-24 Licentia Patent-Verwaltungs-G.M.B.H. Light fired thyristor with faulty firing protection
CA1055165A (fr) * 1976-01-09 1979-05-22 Westinghouse Electric Corporation Thyristor declenche par une surtension
US4060825A (en) * 1976-02-09 1977-11-29 Westinghouse Electric Corporation High speed high power two terminal solid state switch fired by dV/dt
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4053922A (en) * 1976-05-19 1977-10-11 General Electric Company Light triggered thyristor having controlled turn on delay
US4107721A (en) * 1977-01-26 1978-08-15 Bell Telephone Laboratories, Incorporated Phototransistor
DE2951916A1 (de) * 1979-12-21 1981-07-02 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer thyristor
DE3118364A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit optoelektronisch angesteuerten emitterkurzschluessen und verfahren zu seinem betrieb
JPS57193009U (fr) * 1981-05-29 1982-12-07
US4595939A (en) * 1982-11-15 1986-06-17 Tokyo Shibaura Denki Kabushiki Kaisha Radiation-controllable thyristor with multiple, non-concentric amplified stages
IE840248L (en) * 1983-02-18 1984-08-18 Westinghouse Electric Corp Light activated power transistor
DE3431817C2 (de) * 1984-08-30 1986-07-10 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Lichtzündbarer Thyristor
US7057214B2 (en) * 2003-07-01 2006-06-06 Optiswitch Technology Corporation Light-activated semiconductor switches

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate

Also Published As

Publication number Publication date
US3697833A (en) 1972-10-10
GB1301245A (fr) 1972-12-29
FR2091966B1 (fr) 1976-05-28
FR2091966A1 (fr) 1972-01-21
JPS508315B1 (fr) 1975-04-03
DE2107564B2 (de) 1975-10-16
DE2107564A1 (de) 1971-09-02

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