SE363429B - - Google Patents

Info

Publication number
SE363429B
SE363429B SE15009/69A SE1500969A SE363429B SE 363429 B SE363429 B SE 363429B SE 15009/69 A SE15009/69 A SE 15009/69A SE 1500969 A SE1500969 A SE 1500969A SE 363429 B SE363429 B SE 363429B
Authority
SE
Sweden
Application number
SE15009/69A
Inventor
R Neale
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of SE363429B publication Critical patent/SE363429B/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
SE15009/69A 1968-11-04 1969-11-03 SE363429B (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77301368A 1968-11-04 1968-11-04
US80699469A 1969-03-13 1969-03-13

Publications (1)

Publication Number Publication Date
SE363429B true SE363429B (ko) 1974-01-14

Family

ID=27118688

Family Applications (1)

Application Number Title Priority Date Filing Date
SE15009/69A SE363429B (ko) 1968-11-04 1969-11-03

Country Status (7)

Country Link
US (1) US3675090A (ko)
BE (1) BE741171A (ko)
DE (1) DE1954967C3 (ko)
FR (1) FR2024104A1 (ko)
GB (1) GB1293152A (ko)
NL (1) NL6916601A (ko)
SE (1) SE363429B (ko)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3827073A (en) * 1969-05-01 1974-07-30 Texas Instruments Inc Gated bilateral switching semiconductor device
US3876985A (en) * 1971-04-30 1975-04-08 Energy Conversion Devices Inc Matrix of amorphous electronic control device
US3740620A (en) * 1971-06-22 1973-06-19 Ibm Storage system having heterojunction-homojunction devices
US3906537A (en) * 1973-11-02 1975-09-16 Xerox Corp Solid state element comprising semi-conductive glass composition exhibiting negative incremental resistance and threshold switching
US3956042A (en) * 1974-11-07 1976-05-11 Xerox Corporation Selective etchants for thin film devices
US3918032A (en) * 1974-12-05 1975-11-04 Us Army Amorphous semiconductor switch and memory with a crystallization-accelerating layer
US4494136A (en) * 1979-10-04 1985-01-15 Wisconsin Alumni Research Foundation Semiconductor device having an amorphous metal layer contact
US4350994A (en) * 1979-10-04 1982-09-21 Wisconsin Alumni Research Foundation Semiconductor device having an amorphous metal layer contact
EP0035118B1 (en) * 1980-02-28 1985-11-21 Kabushiki Kaisha Toshiba Iii - v group compound semiconductor light-emitting element and method of producing the same
FR2478879A1 (fr) * 1980-03-24 1981-09-25 Commissariat Energie Atomique Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes
DE3152307A1 (de) * 1980-08-28 1982-11-04 Wisconsin Alumni Res Found Use of metallic glasses for fabrication of structures with submicron dimensions
US4471376A (en) * 1981-01-14 1984-09-11 Harris Corporation Amorphous devices and interconnect system and method of fabrication
US4479088A (en) * 1981-01-16 1984-10-23 Burroughs Corporation Wafer including test lead connected to ground for testing networks thereon
US4736229A (en) * 1983-05-11 1988-04-05 Alphasil Incorporated Method of manufacturing flat panel backplanes, display transistors and displays made thereby
US4651185A (en) * 1983-08-15 1987-03-17 Alphasil, Inc. Method of manufacturing thin film transistors and transistors made thereby
US5367208A (en) * 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
JPS6381948A (ja) * 1986-09-26 1988-04-12 Toshiba Corp 多層配線半導体装置
US5097232A (en) * 1989-06-16 1992-03-17 Environmental Research Institute Of Michigan Transmission lines for wafer-scale integration and method for increasing signal transmission speeds
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
US5502315A (en) * 1989-09-07 1996-03-26 Quicklogic Corporation Electrically programmable interconnect structure having a PECVD amorphous silicon element
JPH07120882B2 (ja) * 1990-02-19 1995-12-20 東光株式会社 ヘリカルフィルタ
US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5780323A (en) * 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
JPH06505368A (ja) * 1991-01-17 1994-06-16 クロスポイント・ソルーションズ・インコーポレイテッド フィールドプログラム可能なゲートアレイに使用するための改良されたアンチヒューズ回路構造およびその製造方法
US5100827A (en) * 1991-02-27 1992-03-31 At&T Bell Laboratories Buried antifuse
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
EP0509631A1 (en) * 1991-04-18 1992-10-21 Actel Corporation Antifuses having minimum areas
US5196724A (en) * 1991-04-26 1993-03-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5557136A (en) * 1991-04-26 1996-09-17 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5701027A (en) * 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5233217A (en) * 1991-05-03 1993-08-03 Crosspoint Solutions Plug contact with antifuse
WO1992021154A1 (en) * 1991-05-10 1992-11-26 Quicklogic Corporation Amorphous silicon antifuses and methods for fabrication thereof
US5329153A (en) * 1992-04-10 1994-07-12 Crosspoint Solutions, Inc. Antifuse with nonstoichiometric tin layer and method of manufacture thereof
US5485031A (en) * 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
US5510629A (en) * 1994-05-27 1996-04-23 Crosspoint Solutions, Inc. Multilayer antifuse with intermediate spacer layer
US5663591A (en) * 1995-02-14 1997-09-02 Crosspoint Solutions, Inc. Antifuse with double via, spacer-defined contact
US5789764A (en) * 1995-04-14 1998-08-04 Actel Corporation Antifuse with improved antifuse material
JP3027195B2 (ja) * 1995-06-02 2000-03-27 アクテル・コーポレイション 隆起タングステンプラグ アンチヒューズ及びその製造方法
US6125062A (en) * 1998-08-26 2000-09-26 Micron Technology, Inc. Single electron MOSFET memory device and method
US6590797B1 (en) 2002-01-09 2003-07-08 Tower Semiconductor Ltd. Multi-bit programmable memory cell having multiple anti-fuse elements
JP4480649B2 (ja) * 2005-09-05 2010-06-16 富士通マイクロエレクトロニクス株式会社 ヒューズ素子及びその切断方法
KR100687750B1 (ko) * 2005-09-07 2007-02-27 한국전자통신연구원 안티몬과 셀레늄 금속합금을 이용한 상변화형 메모리소자및 그 제조방법
US8759669B2 (en) * 2011-01-14 2014-06-24 Hanergy Hi-Tech Power (Hk) Limited Barrier and planarization layer for thin-film photovoltaic cell
US9543515B2 (en) * 2013-11-07 2017-01-10 Intel Corporation Electrode materials and interface layers to minimize chalcogenide interface resistance

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3436624A (en) * 1965-06-01 1969-04-01 Ericsson Telefon Ab L M Semiconductor bi-directional component
US3418619A (en) * 1966-03-24 1968-12-24 Itt Saturable solid state nonrectifying switching device
US3409809A (en) * 1966-04-06 1968-11-05 Irc Inc Semiconductor or write tri-layered metal contact
US3480843A (en) * 1967-04-18 1969-11-25 Gen Electric Thin-film storage diode with tellurium counterelectrode
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
JPS5026292Y1 (ko) * 1968-01-29 1975-08-06

Also Published As

Publication number Publication date
FR2024104A1 (ko) 1970-08-28
DE1954967B2 (de) 1974-05-02
GB1293152A (en) 1972-10-18
US3675090A (en) 1972-07-04
DE1954967C3 (de) 1974-11-28
NL6916601A (ko) 1970-05-08
DE1954967A1 (de) 1970-05-06
BE741171A (ko) 1970-04-16

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