SE362540B - - Google Patents
Info
- Publication number
- SE362540B SE362540B SE11885/69A SE1188569A SE362540B SE 362540 B SE362540 B SE 362540B SE 11885/69 A SE11885/69 A SE 11885/69A SE 1188569 A SE1188569 A SE 1188569A SE 362540 B SE362540 B SE 362540B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/098—Layer conversion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB41476/68A GB1280022A (en) | 1968-08-30 | 1968-08-30 | Improvements in and relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SE362540B true SE362540B (de) | 1973-12-10 |
Family
ID=10419864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE11885/69A SE362540B (de) | 1968-08-30 | 1969-08-27 |
Country Status (9)
Country | Link |
---|---|
US (1) | US3748545A (de) |
BE (1) | BE738309A (de) |
CA (1) | CA993119A (de) |
CH (1) | CH508278A (de) |
DE (1) | DE1944793C3 (de) |
FR (1) | FR2017125A1 (de) |
GB (1) | GB1280022A (de) |
NL (1) | NL6913300A (de) |
SE (1) | SE362540B (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3885998A (en) * | 1969-12-05 | 1975-05-27 | Siemens Ag | Method for the simultaneous formation of semiconductor components with individually tailored isolation regions |
US4032372A (en) * | 1971-04-28 | 1977-06-28 | International Business Machines Corporation | Epitaxial outdiffusion technique for integrated bipolar and field effect transistors |
IT947674B (it) * | 1971-04-28 | 1973-05-30 | Ibm | Tecnica di diffusione epitassiale per la fabbricazione di transisto ri bipolari e transistori fet |
US3993512A (en) * | 1971-11-22 | 1976-11-23 | U.S. Philips Corporation | Method of manufacturing an integrated circuit utilizing outdiffusion and multiple layer epitaxy |
GB1361303A (en) * | 1972-02-11 | 1974-07-24 | Ferranti Ltd | Manufacture of semiconductor devices |
US3945032A (en) * | 1972-05-30 | 1976-03-16 | Ferranti Limited | Semiconductor integrated circuit device having a conductive plane and a diffused network of conductive tracks |
US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
US3793088A (en) * | 1972-11-15 | 1974-02-19 | Bell Telephone Labor Inc | Compatible pnp and npn devices in an integrated circuit |
US3841918A (en) * | 1972-12-01 | 1974-10-15 | Bell Telephone Labor Inc | Method of integrated circuit fabrication |
US3992232A (en) * | 1973-08-06 | 1976-11-16 | Hitachi, Ltd. | Method of manufacturing semiconductor device having oxide isolation structure and guard ring |
US3920481A (en) * | 1974-06-03 | 1975-11-18 | Fairchild Camera Instr Co | Process for fabricating insulated gate field effect transistor structure |
JPS51135385A (en) * | 1975-03-06 | 1976-11-24 | Texas Instruments Inc | Method of producing semiconductor device |
US4028717A (en) * | 1975-09-22 | 1977-06-07 | Ibm Corporation | Field effect transistor having improved threshold stability |
US4203126A (en) * | 1975-11-13 | 1980-05-13 | Siliconix, Inc. | CMOS structure and method utilizing retarded electric field for minimum latch-up |
US4205330A (en) * | 1977-04-01 | 1980-05-27 | National Semiconductor Corporation | Method of manufacturing a low voltage n-channel MOSFET device |
US4168997A (en) * | 1978-10-10 | 1979-09-25 | National Semiconductor Corporation | Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer |
JPS5574059U (de) * | 1978-11-15 | 1980-05-21 | ||
JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
US5529939A (en) * | 1986-09-26 | 1996-06-25 | Analog Devices, Incorporated | Method of making an integrated circuit with complementary isolated bipolar transistors |
US5227654A (en) * | 1989-05-17 | 1993-07-13 | Kabushiki Kaisha Toshiba | Semiconductor device with improved collector structure |
JP2575876B2 (ja) * | 1989-05-17 | 1997-01-29 | 株式会社東芝 | 半導体装置 |
JP3017809B2 (ja) * | 1991-01-09 | 2000-03-13 | 株式会社東芝 | アナログ・デジタル混載半導体集積回路装置 |
WO2022204913A1 (en) * | 2021-03-30 | 2022-10-06 | Innoscience (Suzhou) Technology Co., Ltd. | Iii nitride semiconductor devices on patterned substrates |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1050805A (de) * | 1964-06-23 | 1900-01-01 | ||
US3386865A (en) * | 1965-05-10 | 1968-06-04 | Ibm | Process of making planar semiconductor devices isolated by encapsulating oxide filled channels |
US3404450A (en) * | 1966-01-26 | 1968-10-08 | Westinghouse Electric Corp | Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions |
US3481801A (en) * | 1966-10-10 | 1969-12-02 | Frances Hugle | Isolation technique for integrated circuits |
US3474308A (en) * | 1966-12-13 | 1969-10-21 | Texas Instruments Inc | Monolithic circuits having matched complementary transistors,sub-epitaxial and surface resistors,and n and p channel field effect transistors |
US3440503A (en) * | 1967-05-31 | 1969-04-22 | Westinghouse Electric Corp | Integrated complementary mos-type transistor structure and method of making same |
-
1968
- 1968-08-30 GB GB41476/68A patent/GB1280022A/en not_active Expired
-
1969
- 1969-08-27 SE SE11885/69A patent/SE362540B/xx unknown
- 1969-08-28 US US00853714A patent/US3748545A/en not_active Expired - Lifetime
- 1969-09-01 BE BE738309D patent/BE738309A/xx unknown
- 1969-09-01 DE DE1944793A patent/DE1944793C3/de not_active Expired
- 1969-09-01 FR FR6929831A patent/FR2017125A1/fr active Pending
- 1969-09-01 CH CH1324069A patent/CH508278A/de not_active IP Right Cessation
- 1969-09-01 NL NL6913300A patent/NL6913300A/xx unknown
- 1969-09-02 CA CA060,866A patent/CA993119A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL6913300A (de) | 1970-03-03 |
GB1280022A (en) | 1972-07-05 |
DE1944793C3 (de) | 1979-06-07 |
US3748545A (en) | 1973-07-24 |
FR2017125A1 (de) | 1970-05-15 |
DE1944793A1 (de) | 1970-05-06 |
DE1944793B2 (de) | 1977-10-06 |
BE738309A (de) | 1970-03-02 |
CA993119A (en) | 1976-07-13 |
CH508278A (de) | 1971-05-31 |