SE354375B - - Google Patents
Info
- Publication number
- SE354375B SE354375B SE14308/69A SE1430869A SE354375B SE 354375 B SE354375 B SE 354375B SE 14308/69 A SE14308/69 A SE 14308/69A SE 1430869 A SE1430869 A SE 1430869A SE 354375 B SE354375 B SE 354375B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/925—Bridge rectifier module
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681803883 DE1803883A1 (de) | 1968-10-18 | 1968-10-18 | Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE354375B true SE354375B (de) | 1973-03-05 |
Family
ID=5710890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE14308/69A SE354375B (de) | 1968-10-18 | 1969-10-17 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3657609A (de) |
| JP (1) | JPS499916B1 (de) |
| AT (1) | AT300144B (de) |
| CH (1) | CH507592A (de) |
| DE (1) | DE1803883A1 (de) |
| FR (1) | FR2021035A1 (de) |
| GB (1) | GB1244926A (de) |
| NL (1) | NL6913942A (de) |
| SE (1) | SE354375B (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2006333B2 (de) * | 1970-02-12 | 1972-10-05 | Kapazitaetsdiodensatz als abstimmelement | |
| JPS51135383A (en) * | 1975-05-20 | 1976-11-24 | Sony Corp | Semiconductor variable capacitance device |
| JPS57103366A (en) * | 1980-12-18 | 1982-06-26 | Clarion Co Ltd | Variable-capacitance device |
| US4427457A (en) | 1981-04-07 | 1984-01-24 | Oregon Graduate Center | Method of making depthwise-oriented integrated circuit capacitors |
| GB2104725B (en) * | 1981-07-17 | 1986-04-09 | Clarion Co Ltd | Variable capacitance device |
| JPS59154077A (ja) * | 1983-02-23 | 1984-09-03 | Clarion Co Ltd | 可変容量素子 |
| FR2567325B1 (fr) * | 1984-07-03 | 1986-11-14 | Thomson Csf | Element a capacite variable, commandable par une tension continue |
| US7071784B2 (en) * | 2002-11-29 | 2006-07-04 | Linear Technology Corporation | High linearity digital variable gain amplifier |
| JP4857531B2 (ja) * | 2004-07-08 | 2012-01-18 | 三菱電機株式会社 | 半導体装置 |
| US8169014B2 (en) * | 2006-01-09 | 2012-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interdigitated capacitive structure for an integrated circuit |
| US7692271B2 (en) * | 2007-02-28 | 2010-04-06 | International Business Machines Corporation | Differential junction varactor |
| US8334571B2 (en) * | 2010-03-25 | 2012-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Junction varactor for ESD protection of RF circuits |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE524376A (de) * | 1952-11-18 | |||
| BE525387A (de) * | 1952-12-29 | 1900-01-01 | ||
| DE1073111B (de) * | 1954-12-02 | 1960-01-14 | Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen | Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper |
| US3062690A (en) * | 1955-08-05 | 1962-11-06 | Hoffman Electronics Corp | Semi-conductor device and method of making the same |
| US3344263A (en) * | 1964-02-24 | 1967-09-26 | Analog dividing circuit with a dual emitter transistor used as a ratio detector |
-
1968
- 1968-10-18 DE DE19681803883 patent/DE1803883A1/de active Pending
-
1969
- 1969-09-12 NL NL6913942A patent/NL6913942A/xx unknown
- 1969-10-14 CH CH1536469A patent/CH507592A/de not_active IP Right Cessation
- 1969-10-15 US US866487A patent/US3657609A/en not_active Expired - Lifetime
- 1969-10-16 AT AT976569A patent/AT300144B/de not_active IP Right Cessation
- 1969-10-17 FR FR6935751A patent/FR2021035A1/fr not_active Withdrawn
- 1969-10-17 GB GB51062/69A patent/GB1244926A/en not_active Expired
- 1969-10-17 SE SE14308/69A patent/SE354375B/xx unknown
- 1969-10-18 JP JP44082989A patent/JPS499916B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS499916B1 (de) | 1974-03-07 |
| NL6913942A (de) | 1970-04-21 |
| CH507592A (de) | 1971-05-15 |
| AT300144B (de) | 1972-07-10 |
| US3657609A (en) | 1972-04-18 |
| FR2021035A1 (de) | 1970-07-17 |
| DE1803883A1 (de) | 1970-05-27 |
| GB1244926A (en) | 1971-09-02 |