SE352196B - - Google Patents
Info
- Publication number
- SE352196B SE352196B SE06981/68A SE698168A SE352196B SE 352196 B SE352196 B SE 352196B SE 06981/68 A SE06981/68 A SE 06981/68A SE 698168 A SE698168 A SE 698168A SE 352196 B SE352196 B SE 352196B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactorsÂ
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2476267 | 1967-05-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE352196B true SE352196B (enrdf_load_stackoverflow) | 1972-12-18 |
Family
ID=10216859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE06981/68A SE352196B (enrdf_load_stackoverflow) | 1967-05-26 | 1968-05-22 |
Country Status (6)
Country | Link |
---|---|
CH (1) | CH474158A (enrdf_load_stackoverflow) |
DE (1) | DE1764372C3 (enrdf_load_stackoverflow) |
FR (1) | FR1573306A (enrdf_load_stackoverflow) |
GB (1) | GB1228754A (enrdf_load_stackoverflow) |
NL (1) | NL151558B (enrdf_load_stackoverflow) |
SE (1) | SE352196B (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1263009A (en) * | 1969-03-31 | 1972-02-09 | Tokyo Shibaura Electric Co | A method for manufacturing a semiconductor device and such device prepared thereby |
GB1332931A (en) * | 1970-01-15 | 1973-10-10 | Mullard Ltd | Methods of manufacturing a semiconductor device |
FR2096876B1 (enrdf_load_stackoverflow) * | 1970-07-09 | 1973-08-10 | Thomson Csf | |
NL170348C (nl) * | 1970-07-10 | 1982-10-18 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult. |
GB1355806A (en) * | 1970-12-09 | 1974-06-05 | Mullard Ltd | Methods of manufacturing a semiconductor device |
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1967
- 1967-05-26 GB GB2476267A patent/GB1228754A/en not_active Expired
-
1968
- 1968-05-22 SE SE06981/68A patent/SE352196B/xx unknown
- 1968-05-27 FR FR1573306D patent/FR1573306A/fr not_active Expired
- 1968-05-27 CH CH785568A patent/CH474158A/de not_active IP Right Cessation
- 1968-05-27 NL NL686807438A patent/NL151558B/xx not_active IP Right Cessation
- 1968-05-27 DE DE1764372A patent/DE1764372C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1573306A (enrdf_load_stackoverflow) | 1969-07-04 |
DE1764372B2 (de) | 1974-06-12 |
NL6807438A (enrdf_load_stackoverflow) | 1968-11-27 |
DE1764372A1 (de) | 1972-04-20 |
CH474158A (de) | 1969-06-15 |
GB1228754A (enrdf_load_stackoverflow) | 1971-04-21 |
NL151558B (nl) | 1976-11-15 |
DE1764372C3 (de) | 1975-01-16 |