SE336626B - - Google Patents
Info
- Publication number
- SE336626B SE336626B SE07085/65A SE708565A SE336626B SE 336626 B SE336626 B SE 336626B SE 07085/65 A SE07085/65 A SE 07085/65A SE 708565 A SE708565 A SE 708565A SE 336626 B SE336626 B SE 336626B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US371674A US3374407A (en) | 1964-06-01 | 1964-06-01 | Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE336626B true SE336626B (xx) | 1971-07-12 |
Family
ID=23464952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE07085/65A SE336626B (xx) | 1964-06-01 | 1965-05-31 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3374407A (xx) |
| DE (1) | DE1514350B1 (xx) |
| ES (1) | ES313525A1 (xx) |
| GB (1) | GB1113211A (xx) |
| NL (1) | NL6506853A (xx) |
| SE (1) | SE336626B (xx) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE666834A (xx) * | 1964-07-13 | |||
| US3979768A (en) * | 1966-03-23 | 1976-09-07 | Hitachi, Ltd. | Semiconductor element having surface coating comprising silicon nitride and silicon oxide films |
| US3528168A (en) * | 1967-09-26 | 1970-09-15 | Texas Instruments Inc | Method of making a semiconductor device |
| US4017883A (en) * | 1971-07-06 | 1977-04-12 | Ibm Corporation | Single-electrode charge-coupled random access memory cell with impurity implanted gate region |
| DE2338388C2 (de) * | 1973-07-28 | 1982-04-15 | Ibm Deutschland Gmbh, 7000 Stuttgart | Feldeffekt-Halbleiteranordnung |
| US4672423A (en) * | 1982-09-30 | 1987-06-09 | International Business Machines Corporation | Voltage controlled resonant transmission semiconductor device |
| NL8303834A (nl) * | 1983-11-08 | 1985-06-03 | Philips Nv | Halfgeleiderinrichting. |
| US4847517A (en) * | 1988-02-16 | 1989-07-11 | Ltv Aerospace & Defense Co. | Microwave tube modulator |
| DE19719165A1 (de) * | 1997-05-06 | 1998-11-12 | Siemens Ag | Halbleiterbauelement |
| SE518797C2 (sv) * | 2000-07-19 | 2002-11-19 | Ericsson Telefon Ab L M | Effekt-LDMOS-transistor innefattande ett flertal parallellkopplade transistorsegment med olika tröskelspänningar |
| CN104781938B (zh) * | 2012-06-14 | 2018-06-26 | 帝维拉公司 | 多层基底结构以及制造其的方法和系统 |
| US9879357B2 (en) | 2013-03-11 | 2018-01-30 | Tivra Corporation | Methods and systems for thin film deposition processes |
| US9487885B2 (en) | 2012-06-14 | 2016-11-08 | Tivra Corporation | Substrate structures and methods |
| US8765609B2 (en) | 2012-07-25 | 2014-07-01 | Power Integrations, Inc. | Deposit/etch for tapered oxide |
| US9711616B2 (en) * | 2014-12-23 | 2017-07-18 | Northrop Grumman Systems Corporation | Dual-channel field effect transistor device having increased amplifier linearity |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2951191A (en) * | 1958-08-26 | 1960-08-30 | Rca Corp | Semiconductor devices |
| NL265382A (xx) * | 1960-03-08 | |||
| NL132570C (xx) * | 1963-03-07 | |||
| US3260948A (en) * | 1963-04-19 | 1966-07-12 | Rca Corp | Field-effect transistor translating circuit |
| DE1249933B (de) * | 1963-07-19 | 1967-09-14 | Radio Corporation of America, New York, NY (V St A) | Schaltungsanordnung zum Verstar ken elektrischer Signale mit Feldeffekttran sistoren, die eine isolierte Steuerelektrode enthalten |
-
1964
- 1964-06-01 US US371674A patent/US3374407A/en not_active Expired - Lifetime
-
1965
- 1965-05-14 GB GB20563/65A patent/GB1113211A/en not_active Expired
- 1965-05-28 DE DE19651514350D patent/DE1514350B1/de active Pending
- 1965-05-29 ES ES0313525A patent/ES313525A1/es not_active Expired
- 1965-05-31 SE SE07085/65A patent/SE336626B/xx unknown
- 1965-05-31 NL NL6506853A patent/NL6506853A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1113211A (en) | 1968-05-08 |
| NL6506853A (xx) | 1965-12-02 |
| ES313525A1 (es) | 1966-03-01 |
| DE1514350B1 (de) | 1970-06-04 |
| US3374407A (en) | 1968-03-19 |