SE332464B - - Google Patents

Info

Publication number
SE332464B
SE332464B SE05463/67A SE546367A SE332464B SE 332464 B SE332464 B SE 332464B SE 05463/67 A SE05463/67 A SE 05463/67A SE 546367 A SE546367 A SE 546367A SE 332464 B SE332464 B SE 332464B
Authority
SE
Sweden
Prior art keywords
film
photo
anodized aluminium
conductive
substrate
Prior art date
Application number
SE05463/67A
Other languages
English (en)
Inventor
R Chamberlin
Original Assignee
Ncr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US546718A external-priority patent/US3369653A/en
Application filed by Ncr filed Critical Ncr
Publication of SE332464B publication Critical patent/SE332464B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/32—Details specially adapted for motion-picture projection
    • G03B21/321—Holders for films, e.g. reels, cassettes, spindles
    • G03B21/323—Cassettes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B23/00—Record carriers not specific to the method of recording or reproducing; Accessories, e.g. containers, specially adapted for co-operation with the recording or reproducing apparatus ; Intermediate mediums; Apparatus or processes specially adapted for their manufacture
    • G11B23/02—Containers; Storing means both adapted to cooperate with the recording or reproducing means
    • G11B23/027—Containers for single reels or spools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
    • H01L31/164—Optical potentiometers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)
  • Closures For Containers (AREA)
  • Storage Of Web-Like Or Filamentary Materials (AREA)
SE05463/67A 1966-04-21 1967-04-19 SE332464B (xx)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US54419366A 1966-04-21 1966-04-21
US546718A US3369653A (en) 1966-05-02 1966-05-02 Dust-tight locking mechanism
US81247968A 1968-08-20 1968-08-20
US81247768A 1968-08-20 1968-08-20

Publications (1)

Publication Number Publication Date
SE332464B true SE332464B (xx) 1971-02-08

Family

ID=27504705

Family Applications (1)

Application Number Title Priority Date Filing Date
SE05463/67A SE332464B (xx) 1966-04-21 1967-04-19

Country Status (8)

Country Link
US (3) US3449705A (xx)
AT (1) AT278636B (xx)
BE (1) BE697209A (xx)
CH (1) CH465079A (xx)
DE (2) DE1614238B1 (xx)
GB (2) GB1116676A (xx)
NL (2) NL160117C (xx)
SE (1) SE332464B (xx)

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US3807304A (en) * 1968-07-15 1974-04-30 Itek Corp Photographic process for producing coherent metallic image bonded to a roughened support and products produced thereby
US3807305A (en) * 1968-07-15 1974-04-30 Itek Corp Metal photographic plate comprising a silver halide process
US3620847A (en) * 1969-05-05 1971-11-16 Us Air Force Silicon solar cell array hardened to space nuclear blast radiation
US3767992A (en) * 1971-08-23 1973-10-23 Lewis Eng Co Servo apparatus
US3790795A (en) * 1972-07-26 1974-02-05 Nasa High field cds detector for infrared radiation
US3902920A (en) * 1972-11-03 1975-09-02 Baldwin Co D H Photovoltaic cell
DE2313997C3 (de) * 1973-03-21 1975-08-28 Intermadox Ag, Zug (Schweiz) Lichtelektrische Potentiometeranordnung unter Vermeidung beweglicher Strom Zuführungen
USRE30147E (en) * 1974-01-08 1979-11-13 Photon Power, Inc. Method of coating a glass ribbon on a liquid float bath
US3998659A (en) * 1974-01-28 1976-12-21 Texas Instruments Incorporated Solar cell with semiconductor particles and method of fabrication
FR2286508A1 (fr) * 1974-09-24 1976-04-23 Baldwin Cy Dh Cellule photovoltaique et son procede de realisation par croissance microcristalline
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4137096A (en) * 1977-03-03 1979-01-30 Maier Henry B Low cost system for developing solar cells
FR2386111A1 (fr) * 1977-04-01 1978-10-27 Bonohm Sa Potentiometre a curseur optique
US4224355A (en) * 1978-03-15 1980-09-23 Photon Power, Inc. Method for quality film formation
US4239809A (en) * 1978-03-15 1980-12-16 Photon Power, Inc. Method for quality film formation
DE2822477C3 (de) * 1978-05-23 1980-11-20 Heimann Gmbh, 6200 Wiesbaden Optoelektrischer einstellbarer Spannungsteiler
US4284885A (en) * 1978-05-26 1981-08-18 Honeywell Inc. Optical potentiometer
JPS55127074A (en) * 1979-03-26 1980-10-01 Canon Inc Photoelectric transfer element with high molecular film as substrate
US4271354A (en) * 1979-08-09 1981-06-02 Shs Research Labs, Inc. Manual belt electro-optical control
US4546245A (en) * 1979-11-19 1985-10-08 Joseph A. Barbosa Electronic controller
DE8034894U1 (de) * 1980-12-31 1981-06-04 Basf Ag, 6700 Ludwigshafen Verpackung fuer Aufzeichnungstraeger
US4401839A (en) * 1981-12-15 1983-08-30 Atlantic Richfield Company Solar panel with hardened foil back layer
US4947665A (en) * 1989-03-23 1990-08-14 Rockford Manufacturing Group, Inc. Apparatus for the electrical control of an in-line drawing machine
US5176755A (en) * 1990-02-14 1993-01-05 Armco Inc. Plastic powder coated metal strip
US5439704A (en) * 1993-10-27 1995-08-08 Hunter Engineering Company, Inc. Combined coil and blank powder coating
US5674325A (en) * 1995-06-07 1997-10-07 Photon Energy, Inc. Thin film photovoltaic device and process of manufacture
US6295818B1 (en) * 1999-06-29 2001-10-02 Powerlight Corporation PV-thermal solar power assembly
US7053294B2 (en) * 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
WO2005006393A2 (en) * 2003-05-27 2005-01-20 Triton Systems, Inc. Pinhold porosity free insulating films on flexible metallic substrates for thin film applications
US20050046312A1 (en) * 2003-09-01 2005-03-03 Fuji Photo Film Co., Ltd. Laminated structure, piezoelectric actuator and method of manufacturing the same
US20070163641A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US20070169809A1 (en) * 2004-02-19 2007-07-26 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US20070163639A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from microflake particles
US8846141B1 (en) 2004-02-19 2014-09-30 Aeris Capital Sustainable Ip Ltd. High-throughput printing of semiconductor precursor layer from microflake particles
US8642455B2 (en) * 2004-02-19 2014-02-04 Matthew R. Robinson High-throughput printing of semiconductor precursor layer from nanoflake particles
US7700464B2 (en) * 2004-02-19 2010-04-20 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from nanoflake particles
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
US8329501B1 (en) 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US20070163642A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles
US7605328B2 (en) 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US7604843B1 (en) 2005-03-16 2009-10-20 Nanosolar, Inc. Metallic dispersion
US8623448B2 (en) * 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US8309163B2 (en) * 2004-02-19 2012-11-13 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US8372734B2 (en) * 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
US7838868B2 (en) * 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US7732229B2 (en) * 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
US20090032108A1 (en) * 2007-03-30 2009-02-05 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
US8541048B1 (en) 2004-09-18 2013-09-24 Nanosolar, Inc. Formation of photovoltaic absorber layers on foil substrates
US8927315B1 (en) 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells
US8361019B2 (en) 2006-05-15 2013-01-29 Hillios Christopher H Injection aid and stability disk for syringe or insulin pen
KR20090131841A (ko) * 2008-06-19 2009-12-30 삼성전자주식회사 광전 소자
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Also Published As

Publication number Publication date
CH465079A (fr) 1968-11-15
BE697209A (xx) 1967-10-02
US3586541A (en) 1971-06-22
US3539816A (en) 1970-11-10
DE1614238B1 (de) 1970-06-18
NL160117C (nl) 1979-09-17
AT278636B (de) 1970-02-10
NL6705667A (xx) 1967-10-23
US3449705A (en) 1969-06-10
DE1300058B (de) 1969-07-24
NL6705687A (xx) 1967-11-03
GB1187844A (en) 1970-04-15
GB1116676A (en) 1968-06-12
NL160117B (nl) 1979-04-17

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