SE332232B - - Google Patents
Info
- Publication number
- SE332232B SE332232B SE09941/67*A SE994167A SE332232B SE 332232 B SE332232 B SE 332232B SE 994167 A SE994167 A SE 994167A SE 332232 B SE332232 B SE 332232B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEB0087825 | 1966-07-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE332232B true SE332232B (fr) | 1971-02-01 |
Family
ID=6983965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE09941/67*A SE332232B (fr) | 1966-07-02 | 1967-06-30 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3531697A (fr) |
| CH (1) | CH477093A (fr) |
| DE (1) | DE1539694B2 (fr) |
| FR (1) | FR1530036A (fr) |
| GB (1) | GB1166154A (fr) |
| NL (1) | NL6709120A (fr) |
| SE (1) | SE332232B (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1263174A (en) * | 1969-06-11 | 1972-02-09 | Westinghouse Brake & Signal | Semiconductor device |
| US3624464A (en) * | 1969-12-12 | 1971-11-30 | Gen Electric | Peripheral gate scr with annular ballast segment for more uniform turn on |
| CH578254A5 (fr) * | 1974-12-03 | 1976-07-30 | Bbc Brown Boveri & Cie |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1166940B (de) * | 1961-03-21 | 1964-04-02 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnden Leitfaehigkeitstyps und Verfahren zum Herstellen |
| GB942901A (en) * | 1961-08-29 | 1963-11-27 | Ass Elect Ind | Improvements in controlled semi-conductor rectifiers |
-
1966
- 1966-07-02 DE DE19661539694 patent/DE1539694B2/de not_active Withdrawn
-
1967
- 1967-05-23 US US640729A patent/US3531697A/en not_active Expired - Lifetime
- 1967-06-29 CH CH926667A patent/CH477093A/de not_active IP Right Cessation
- 1967-06-30 SE SE09941/67*A patent/SE332232B/xx unknown
- 1967-06-30 GB GB30313/67A patent/GB1166154A/en not_active Expired
- 1967-06-30 NL NL6709120A patent/NL6709120A/xx unknown
- 1967-06-30 FR FR112623A patent/FR1530036A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH477093A (de) | 1969-08-15 |
| DE1539694B2 (de) | 1971-04-29 |
| US3531697A (en) | 1970-09-29 |
| NL6709120A (fr) | 1968-01-03 |
| FR1530036A (fr) | 1968-06-21 |
| DE1539694A1 (de) | 1970-11-12 |
| GB1166154A (en) | 1969-10-08 |