SE331718B - - Google Patents

Info

Publication number
SE331718B
SE331718B SE05684/64A SE568464A SE331718B SE 331718 B SE331718 B SE 331718B SE 05684/64 A SE05684/64 A SE 05684/64A SE 568464 A SE568464 A SE 568464A SE 331718 B SE331718 B SE 331718B
Authority
SE
Sweden
Application number
SE05684/64A
Inventor
W Dash
E Taft
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE331718B publication Critical patent/SE331718B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/052—Face to face deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE05684/64A 1963-05-07 1964-05-08 SE331718B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US278787A US3316130A (en) 1963-05-07 1963-05-07 Epitaxial growth of semiconductor devices

Publications (1)

Publication Number Publication Date
SE331718B true SE331718B (de) 1971-01-11

Family

ID=23066360

Family Applications (1)

Application Number Title Priority Date Filing Date
SE05684/64A SE331718B (de) 1963-05-07 1964-05-08

Country Status (5)

Country Link
US (1) US3316130A (de)
DE (1) DE1285465B (de)
GB (1) GB1065074A (de)
NL (1) NL6405005A (de)
SE (1) SE331718B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636919A (en) * 1969-12-02 1972-01-25 Univ Ohio State Apparatus for growing films
NL298518A (de) * 1962-11-15
US3428500A (en) * 1964-04-25 1969-02-18 Fujitsu Ltd Process of epitaxial deposition on one side of a substrate with simultaneous vapor etching of the opposite side
DE1519865A1 (de) * 1965-02-05 1970-02-26 Siemens Ag Verfahren zum Herstellen von duennen Schichten aus hochreinen Materialien
DE1287047B (de) * 1965-02-18 1969-01-16 Siemens Ag Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
US3634150A (en) * 1969-06-25 1972-01-11 Gen Electric Method for forming epitaxial crystals or wafers in selected regions of substrates
US3621346A (en) * 1970-01-28 1971-11-16 Ibm Process for forming semiconductor devices with polycrystalline diffusion pathways and devices formed thereby
US3755015A (en) * 1971-12-10 1973-08-28 Gen Electric Anti-reflection coating for semiconductor diode array targets
US4187516A (en) * 1972-04-10 1980-02-05 Raytheon Company Semiconductor integrated circuits
US3969164A (en) * 1974-09-16 1976-07-13 Bell Telephone Laboratories, Incorporated Native oxide technique for preparing clean substrate surfaces
DE2829830C2 (de) * 1978-07-07 1986-06-05 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zur epitaktischen Abscheidung
US4365588A (en) * 1981-03-13 1982-12-28 Rca Corporation Fixture for VPE reactor
US4412868A (en) * 1981-12-23 1983-11-01 General Electric Company Method of making integrated circuits utilizing ion implantation and selective epitaxial growth
US5134090A (en) * 1982-06-18 1992-07-28 At&T Bell Laboratories Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
US4579609A (en) * 1984-06-08 1986-04-01 Massachusetts Institute Of Technology Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition
US4869776A (en) * 1986-07-29 1989-09-26 Sharp Kabushiki Kaisha Method for the growth of a compound semiconductor crystal

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL98697C (de) * 1952-08-20
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
DE950848C (de) * 1953-03-19 1956-10-18 Heraeus Gmbh W C Verfahren zur Herstellung von reinem Silicium
BE548791A (de) * 1955-06-20
NL256300A (de) * 1959-05-28 1900-01-01
NL252531A (de) * 1959-06-30 1900-01-01
US3012902A (en) * 1959-12-08 1961-12-12 Owens Illinois Glass Co Process of reacting a vaporous metal with a glass surface
NL268241A (de) * 1960-09-09
NL268294A (de) * 1960-10-10
US3148094A (en) * 1961-03-13 1964-09-08 Texas Instruments Inc Method of producing junctions by a relocation process
US3140965A (en) * 1961-07-22 1964-07-14 Siemens Ag Vapor deposition onto stacked semiconductor wafers followed by particular cooling

Also Published As

Publication number Publication date
GB1065074A (en) 1967-04-12
DE1285465B (de) 1968-12-19
NL6405005A (de) 1964-11-09
US3316130A (en) 1967-04-25

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