SE329414B - - Google Patents
Info
- Publication number
- SE329414B SE329414B SE14883/64A SE1488364A SE329414B SE 329414 B SE329414 B SE 329414B SE 14883/64 A SE14883/64 A SE 14883/64A SE 1488364 A SE1488364 A SE 1488364A SE 329414 B SE329414 B SE 329414B
- Authority
- SE
- Sweden
- Prior art keywords
- region
- type
- base
- transistor
- conductivity type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 3
- 241001422033 Thestylus Species 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
- H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES88651A DE1239871B (de) | 1963-12-09 | 1963-12-09 | Druckempfindliche Halbleiteranordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE329414B true SE329414B (US07655746-20100202-C00011.png) | 1970-10-12 |
Family
ID=7514598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE14883/64A SE329414B (US07655746-20100202-C00011.png) | 1963-12-09 | 1964-12-09 |
Country Status (7)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3463975A (en) * | 1964-12-31 | 1969-08-26 | Texas Instruments Inc | Unitary semiconductor high speed switching device utilizing a barrier diode |
| US3414779A (en) * | 1965-12-08 | 1968-12-03 | Northern Electric Co | Integrated parametric amplifier consisting of a material with both semiconductive and piezoelectric properties |
| NL6608194A (US07655746-20100202-C00011.png) * | 1966-06-14 | 1967-12-15 | ||
| US3624315A (en) * | 1967-01-23 | 1971-11-30 | Max E Broce | Transducer apparatus and transducer amplifier system utilizing insulated gate semiconductor field effect devices |
| CA920280A (en) * | 1970-11-16 | 1973-01-30 | Omron Tateisi Electronics Co. | Semiconductive transducer |
| US3677280A (en) * | 1971-06-21 | 1972-07-18 | Fairchild Camera Instr Co | Optimum high gain-bandwidth phototransistor structure |
| JPS5522949B2 (US07655746-20100202-C00011.png) * | 1972-02-19 | 1980-06-19 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE490715A (US07655746-20100202-C00011.png) * | 1948-08-19 | |||
| US2632062A (en) * | 1949-06-15 | 1953-03-17 | Bell Telephone Labor Inc | Semiconductor transducer |
| US3210620A (en) * | 1961-10-04 | 1965-10-05 | Westinghouse Electric Corp | Semiconductor device providing diode functions |
-
1963
- 1963-12-09 DE DES88651A patent/DE1239871B/de active Pending
-
1964
- 1964-11-12 NL NL6413213A patent/NL6413213A/xx unknown
- 1964-12-07 CH CH1580064A patent/CH431730A/de unknown
- 1964-12-08 GB GB49836/64A patent/GB1075488A/en not_active Expired
- 1964-12-09 SE SE14883/64A patent/SE329414B/xx unknown
- 1964-12-09 BE BE656872A patent/BE656872A/xx unknown
- 1964-12-09 US US417157A patent/US3319140A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3319140A (en) | 1967-05-09 |
| DE1239871B (de) | 1967-05-03 |
| NL6413213A (US07655746-20100202-C00011.png) | 1965-06-10 |
| CH431730A (de) | 1967-03-15 |
| BE656872A (US07655746-20100202-C00011.png) | 1965-06-09 |
| GB1075488A (en) | 1967-07-12 |
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