SE316836B - - Google Patents

Info

Publication number
SE316836B
SE316836B SE11530/64A SE1153064A SE316836B SE 316836 B SE316836 B SE 316836B SE 11530/64 A SE11530/64 A SE 11530/64A SE 1153064 A SE1153064 A SE 1153064A SE 316836 B SE316836 B SE 316836B
Authority
SE
Sweden
Application number
SE11530/64A
Inventor
G Koehl
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of SE316836B publication Critical patent/SE316836B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
SE11530/64A 1963-09-25 1964-09-25 SE316836B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL0045951 1963-09-25

Publications (1)

Publication Number Publication Date
SE316836B true SE316836B (de) 1969-11-03

Family

ID=7271387

Family Applications (1)

Application Number Title Priority Date Filing Date
SE11530/64A SE316836B (de) 1963-09-25 1964-09-25

Country Status (4)

Country Link
US (1) US3287182A (de)
CH (1) CH427042A (de)
NL (1) NL6411227A (de)
SE (1) SE316836B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3428870A (en) * 1965-07-29 1969-02-18 Gen Electric Semiconductor devices
DE2610942C2 (de) * 1976-03-16 1983-04-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements mit in einem Halbleiterkörper monolithisch integrierten Halbleiterelementeinheiten
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE549320A (de) * 1955-09-02
DE1046783B (de) * 1956-07-13 1958-12-18 Siemens Ag Halbleiteranordnung mit einem schwach dotierten Halbleiterkoerper und einem grossflaechigen p-n-UEbergang
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
GB921367A (en) * 1959-04-06 1963-03-20 Standard Telephones Cables Ltd Semiconductor device and method of manufacture
US3146135A (en) * 1959-05-11 1964-08-25 Clevite Corp Four layer semiconductive device
NL251532A (de) * 1959-06-17
FR1273633A (fr) * 1959-11-21 1961-10-13 Siemens Ag Procédé d'obtention d'éléments semi-conducteurs
NL280641A (de) * 1961-07-07
US3184350A (en) * 1962-04-02 1965-05-18 Ibm Fluorocarbon compound used in masking of epitaxial growth of semiconductors by vapordeposition
US3178798A (en) * 1962-05-09 1965-04-20 Ibm Vapor deposition process wherein the vapor contains both donor and acceptor impurities

Also Published As

Publication number Publication date
US3287182A (en) 1966-11-22
DE1464244B2 (de) 1972-04-20
CH427042A (de) 1966-12-31
DE1464244A1 (de) 1969-01-02
NL6411227A (de) 1965-03-26

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