US3979768A
(en)
*
|
1966-03-23 |
1976-09-07 |
Hitachi, Ltd. |
Semiconductor element having surface coating comprising silicon nitride and silicon oxide films
|
NL153374B
(nl)
*
|
1966-10-05 |
1977-05-16 |
Philips Nv |
Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
|
USRE28402E
(en)
*
|
1967-01-13 |
1975-04-29 |
|
Method for controlling semiconductor surface potential |
US3767463A
(en)
*
|
1967-01-13 |
1973-10-23 |
Ibm |
Method for controlling semiconductor surface potential
|
GB1190893A
(en)
*
|
1967-05-04 |
1970-05-06 |
Hitachi Ltd |
A Method of Manufacturing a Semiconductor Device and a Semiconductor Device Obtained Thereby
|
US3640782A
(en)
*
|
1967-10-13 |
1972-02-08 |
Gen Electric |
Diffusion masking in semiconductor preparation
|
USRE28653E
(en)
*
|
1968-04-23 |
1975-12-16 |
|
Method of fabricating semiconductor devices
|
JPS4813986B1
(xx)
*
|
1968-06-12 |
1973-05-02 |
|
|
DE1764759C3
(de)
*
|
1968-07-31 |
1983-11-10 |
Telefunken Patentverwertungsgesellschaft Mbh, 6000 Frankfurt |
Verfahren zum Kontaktieren einer Halbleiterzone einer Diode
|
FR2020020B1
(xx)
*
|
1968-10-07 |
1974-09-20 |
Ibm |
|
US3923562A
(en)
*
|
1968-10-07 |
1975-12-02 |
Ibm |
Process for producing monolithic circuits
|
US3607448A
(en)
*
|
1968-10-21 |
1971-09-21 |
Hughes Aircraft Co |
Chemical milling of silicon carbide
|
JPS492512B1
(xx)
*
|
1969-02-14 |
1974-01-21 |
|
|
US3807038A
(en)
*
|
1969-05-22 |
1974-04-30 |
Mitsubishi Electric Corp |
Process of producing semiconductor devices
|
BE753245A
(fr)
*
|
1969-08-04 |
1970-12-16 |
Rca Corp |
Procede pour la fabrication de dispositifs semiconducteurs
|
US3675314A
(en)
*
|
1970-03-12 |
1972-07-11 |
Alpha Ind Inc |
Method of producing semiconductor devices
|
US3838442A
(en)
*
|
1970-04-15 |
1974-09-24 |
Ibm |
Semiconductor structure having metallization inlaid in insulating layers and method for making same
|
FR2134172B1
(xx)
*
|
1971-04-23 |
1977-03-18 |
Radiotechnique Compelec |
|
US3964940A
(en)
*
|
1971-09-10 |
1976-06-22 |
Plessey Handel Und Investments A.G. |
Methods of producing gallium phosphide yellow light emitting diodes
|
US3941905A
(en)
*
|
1971-10-12 |
1976-03-02 |
Pavena Ag |
Method of continuously impregnating a textile fiber arrangement with liquids
|
US3860466A
(en)
*
|
1971-10-22 |
1975-01-14 |
Texas Instruments Inc |
Nitride composed masking for integrated circuits
|
US3725150A
(en)
*
|
1971-10-29 |
1973-04-03 |
Motorola Inc |
Process for making a fine geometry, self-aligned device structure
|
US3725151A
(en)
*
|
1971-10-29 |
1973-04-03 |
Motorola Inc |
Method of making an igfet defice with reduced gate-to- drain overlap capacitance
|
US3787106A
(en)
*
|
1971-11-09 |
1974-01-22 |
Owens Illinois Inc |
Monolithically structured gas discharge device and method of fabrication
|
JPS5538823B2
(xx)
*
|
1971-12-22 |
1980-10-07 |
|
|
US3961414A
(en)
*
|
1972-06-09 |
1976-06-08 |
International Business Machines Corporation |
Semiconductor structure having metallization inlaid in insulating layers and method for making same
|
US3771218A
(en)
*
|
1972-07-13 |
1973-11-13 |
Ibm |
Process for fabricating passivated transistors
|
US3926694A
(en)
*
|
1972-07-24 |
1975-12-16 |
Signetics Corp |
Double diffused metal oxide semiconductor structure with isolated source and drain and method
|
US3885994A
(en)
*
|
1973-05-25 |
1975-05-27 |
Trw Inc |
Bipolar transistor construction method
|
US3911168A
(en)
*
|
1973-06-01 |
1975-10-07 |
Fairchild Camera Instr Co |
Method for forming a continuous layer of silicon dioxide over a substrate
|
US3873372A
(en)
*
|
1973-07-09 |
1975-03-25 |
Ibm |
Method for producing improved transistor devices
|
US3900352A
(en)
*
|
1973-11-01 |
1975-08-19 |
Ibm |
Isolated fixed and variable threshold field effect transistor fabrication technique
|
US3904454A
(en)
*
|
1973-12-26 |
1975-09-09 |
Ibm |
Method for fabricating minute openings in insulating layers during the formation of integrated circuits
|
US3947298A
(en)
*
|
1974-01-25 |
1976-03-30 |
Raytheon Company |
Method of forming junction regions utilizing R.F. sputtering
|
US3899373A
(en)
*
|
1974-05-20 |
1975-08-12 |
Ibm |
Method for forming a field effect device
|
FR2288392A1
(fr)
*
|
1974-10-18 |
1976-05-14 |
Radiotechnique Compelec |
Procede de realisation de dispositifs semiconducteurs
|
DE2452289A1
(de)
*
|
1974-11-04 |
1976-05-06 |
Siemens Ag |
Halbleiterbauelement
|
JPS5193874A
(en)
*
|
1975-02-15 |
1976-08-17 |
|
Handotaisochino seizohoho
|
US3976511A
(en)
*
|
1975-06-30 |
1976-08-24 |
Ibm Corporation |
Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment
|
US4021270A
(en)
*
|
1976-06-28 |
1977-05-03 |
Motorola, Inc. |
Double master mask process for integrated circuit manufacture
|
US4140547A
(en)
*
|
1976-09-09 |
1979-02-20 |
Tokyo Shibaura Electric Co., Ltd. |
Method for manufacturing MOSFET devices by ion-implantation
|
US4092211A
(en)
*
|
1976-11-18 |
1978-05-30 |
Northern Telecom Limited |
Control of etch rate of silicon dioxide in boiling phosphoric acid
|
DE2658124C3
(de)
*
|
1976-12-22 |
1982-05-06 |
Dynamit Nobel Ag, 5210 Troisdorf |
Verfahren zur Herstellung von Elektroschmelzkorund
|
US4092442A
(en)
*
|
1976-12-30 |
1978-05-30 |
International Business Machines Corporation |
Method of depositing thin films utilizing a polyimide mask
|
NL7706802A
(nl)
*
|
1977-06-21 |
1978-12-27 |
Philips Nv |
Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
|
US4135954A
(en)
*
|
1977-07-12 |
1979-01-23 |
International Business Machines Corporation |
Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers
|
US4360900A
(en)
*
|
1978-11-27 |
1982-11-23 |
Texas Instruments Incorporated |
Non-volatile semiconductor memory elements
|
US4226932A
(en)
*
|
1979-07-05 |
1980-10-07 |
Gte Automatic Electric Laboratories Incorporated |
Titanium nitride as one layer of a multi-layered coating intended to be etched
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US4394406A
(en)
*
|
1980-06-30 |
1983-07-19 |
International Business Machines Corp. |
Double polysilicon contact structure and process
|
US4367119A
(en)
*
|
1980-08-18 |
1983-01-04 |
International Business Machines Corporation |
Planar multi-level metal process with built-in etch stop
|
US4358326A
(en)
*
|
1980-11-03 |
1982-11-09 |
International Business Machines Corporation |
Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
|
FR2535525A1
(fr)
*
|
1982-10-29 |
1984-05-04 |
Western Electric Co |
Procede de fabrication de circuits integres comportant des couches isolantes minces
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US4579812A
(en)
*
|
1984-02-03 |
1986-04-01 |
Advanced Micro Devices, Inc. |
Process for forming slots of different types in self-aligned relationship using a latent image mask
|
US4745089A
(en)
*
|
1987-06-11 |
1988-05-17 |
General Electric Company |
Self-aligned barrier metal and oxidation mask method
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US5413966A
(en)
*
|
1990-12-20 |
1995-05-09 |
Lsi Logic Corporation |
Shallow trench etch
|
US5290396A
(en)
*
|
1991-06-06 |
1994-03-01 |
Lsi Logic Corporation |
Trench planarization techniques
|
US5248625A
(en)
*
|
1991-06-06 |
1993-09-28 |
Lsi Logic Corporation |
Techniques for forming isolation structures
|
US5252503A
(en)
*
|
1991-06-06 |
1993-10-12 |
Lsi Logic Corporation |
Techniques for forming isolation structures
|
US5225358A
(en)
*
|
1991-06-06 |
1993-07-06 |
Lsi Logic Corporation |
Method of forming late isolation with polishing
|
US5286344A
(en)
*
|
1992-06-15 |
1994-02-15 |
Micron Technology, Inc. |
Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride
|
US5880036A
(en)
*
|
1992-06-15 |
1999-03-09 |
Micron Technology, Inc. |
Method for enhancing oxide to nitride selectivity through the use of independent heat control
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US5523590A
(en)
*
|
1993-10-20 |
1996-06-04 |
Oki Electric Industry Co., Ltd. |
LED array with insulating films
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US6022751A
(en)
*
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1996-10-24 |
2000-02-08 |
Canon Kabushiki Kaisha |
Production of electronic device
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US6444592B1
(en)
|
2000-06-20 |
2002-09-03 |
International Business Machines Corporation |
Interfacial oxidation process for high-k gate dielectric process integration
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CN100539035C
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2004-09-10 |
2009-09-09 |
中芯国际集成电路制造(上海)有限公司 |
半导体集成电路硅单晶片衬底背面氮化硅层的新腐蚀方法
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TWI534247B
(zh)
*
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2013-01-31 |
2016-05-21 |
|
An etch paste for etching an indium tin oxide conductive film
|