SE313623B - - Google Patents

Info

Publication number
SE313623B
SE313623B SE1258/65A SE125865A SE313623B SE 313623 B SE313623 B SE 313623B SE 1258/65 A SE1258/65 A SE 1258/65A SE 125865 A SE125865 A SE 125865A SE 313623 B SE313623 B SE 313623B
Authority
SE
Sweden
Application number
SE1258/65A
Inventor
E Spicar
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE1258/65A priority Critical patent/SE313623B/xx
Priority to NL6600773A priority patent/NL6600773A/xx
Priority to DE19661539625 priority patent/DE1539625B1/de
Priority to US523171A priority patent/US3405332A/en
Priority to CH115866A priority patent/CH444973A/de
Priority to FR47485A priority patent/FR1466026A/fr
Priority to GB3859/66A priority patent/GB1132824A/en
Publication of SE313623B publication Critical patent/SE313623B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Rectifiers (AREA)
SE1258/65A 1965-01-30 1965-01-30 SE313623B (en:Method)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE1258/65A SE313623B (en:Method) 1965-01-30 1965-01-30
NL6600773A NL6600773A (en:Method) 1965-01-30 1966-01-20
DE19661539625 DE1539625B1 (de) 1965-01-30 1966-01-20 Schaltungsanordnung zum betrieb eines steuerbaren halbleiter bauelementes und steuerbares halbleiterbauelement fuer diese schaltungsanordnung
US523171A US3405332A (en) 1965-01-30 1966-01-26 Semi-conductor device with increased reverse and forward blocking voltages
CH115866A CH444973A (de) 1965-01-30 1966-01-27 Schaltung mit einer Halbleiteranordnung und einer Spannungsquelle
FR47485A FR1466026A (fr) 1965-01-30 1966-01-27 Dispositif à semi-conducteur supportant des tensions inverses et au blocage plus élevées
GB3859/66A GB1132824A (en) 1965-01-30 1966-01-28 Improvements in semi-conductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE1258/65A SE313623B (en:Method) 1965-01-30 1965-01-30

Publications (1)

Publication Number Publication Date
SE313623B true SE313623B (en:Method) 1969-08-18

Family

ID=20257871

Family Applications (1)

Application Number Title Priority Date Filing Date
SE1258/65A SE313623B (en:Method) 1965-01-30 1965-01-30

Country Status (6)

Country Link
US (1) US3405332A (en:Method)
CH (1) CH444973A (en:Method)
DE (1) DE1539625B1 (en:Method)
GB (1) GB1132824A (en:Method)
NL (1) NL6600773A (en:Method)
SE (1) SE313623B (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638042A (en) * 1969-07-31 1972-01-25 Borg Warner Thyristor with added gate and fast turn-off circuit
JPS5342234B2 (en:Method) * 1973-02-12 1978-11-09

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1073632B (de) * 1956-06-18 1960-01-21 Radio Corporation Of America, New York, N. Y. (V. St. A.) Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices
FR1213751A (fr) * 1958-10-27 1960-04-04 Telecommunications Sa Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion
DE1265875B (de) * 1963-01-05 1968-04-11 Licentia Gmbh Steuerbarer Halbleitergleichrichter
US3307049A (en) * 1963-12-20 1967-02-28 Siemens Ag Turnoff-controllable thyristor and method of its operation

Also Published As

Publication number Publication date
US3405332A (en) 1968-10-08
DE1539625B1 (de) 1971-11-11
CH444973A (de) 1967-10-15
NL6600773A (en:Method) 1966-08-01
GB1132824A (en) 1968-11-06

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