SE308299B - - Google Patents

Info

Publication number
SE308299B
SE308299B SE2941/60A SE294160A SE308299B SE 308299 B SE308299 B SE 308299B SE 2941/60 A SE2941/60 A SE 2941/60A SE 294160 A SE294160 A SE 294160A SE 308299 B SE308299 B SE 308299B
Authority
SE
Sweden
Application number
SE2941/60A
Inventor
M Boudart
P Pollak
Original Assignee
Merck & Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck & Co Inc filed Critical Merck & Co Inc
Publication of SE308299B publication Critical patent/SE308299B/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
SE2941/60A 1959-03-25 1960-03-23 SE308299B (US07860544-20101228-C00003.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US801690A US3170859A (en) 1959-03-25 1959-03-25 Process for the preparation of silicon films

Publications (1)

Publication Number Publication Date
SE308299B true SE308299B (US07860544-20101228-C00003.png) 1969-02-10

Family

ID=25181803

Family Applications (1)

Application Number Title Priority Date Filing Date
SE2941/60A SE308299B (US07860544-20101228-C00003.png) 1959-03-25 1960-03-23

Country Status (7)

Country Link
US (1) US3170859A (US07860544-20101228-C00003.png)
BE (1) BE588164A (US07860544-20101228-C00003.png)
CH (1) CH396854A (US07860544-20101228-C00003.png)
DE (1) DE1119837B (US07860544-20101228-C00003.png)
GB (1) GB942201A (US07860544-20101228-C00003.png)
NL (1) NL249150A (US07860544-20101228-C00003.png)
SE (1) SE308299B (US07860544-20101228-C00003.png)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1288869A (fr) * 1961-02-15 1962-03-30 Electronique & Physique Perfectionnements aux méthodes pour la préparation et l'utilisation de composés chimiques, notamment des hydrures, en quantités réglables et dispositifs pour leur mise en application
AT268380B (de) * 1965-01-05 1969-02-10 Egyesuelt Izzolampa Verfahren zur Herstellung von Halbleitergeräten
US3437511A (en) * 1966-04-07 1969-04-08 Us Air Force Metal surfaced with boron and coating of silicon,silicon carbide or titanium nitride
NL6915771A (US07860544-20101228-C00003.png) * 1968-10-30 1970-05-04
FR2555206B1 (fr) * 1983-11-22 1986-05-09 Thomson Csf Procede de depot de silicium amorphe par decomposition thermique a basse temperature et dispositif de mise en oeuvre du procede
IT1198290B (it) * 1986-12-02 1988-12-21 Sgs Microelettronica Spa Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori
US5190823A (en) * 1989-07-31 1993-03-02 General Electric Company Method for improving adhesion of synthetic diamond coatings to substrates

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1489724A (en) * 1922-04-28 1924-04-08 Gerald L Wendt Method of producing chemical reactions
GB583142A (en) * 1944-09-29 1946-12-10 Standard Telephones Cables Ltd Improvements in or relating to coating insulating surfaces with metal
US2768061A (en) * 1953-02-26 1956-10-23 Gen Electric Hydrogen reduction method and apparatus
US2945797A (en) * 1956-05-12 1960-07-19 Saint Gobain Manufacture of metals of high purity
US2955966A (en) * 1957-07-03 1960-10-11 Int Standard Electric Corp Manufacture of semiconductor material
US3008897A (en) * 1959-08-07 1961-11-14 Sinclair Refining Co Hydrocarbon demetallization process

Also Published As

Publication number Publication date
DE1119837B (de) 1961-12-21
NL249150A (US07860544-20101228-C00003.png)
BE588164A (fr) 1960-06-16
CH396854A (de) 1965-08-15
US3170859A (en) 1965-02-23
GB942201A (en) 1963-11-20

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