SE1850235A1 - Balanced resistive frequency mixer - Google Patents
Balanced resistive frequency mixerInfo
- Publication number
- SE1850235A1 SE1850235A1 SE1850235A SE1850235A SE1850235A1 SE 1850235 A1 SE1850235 A1 SE 1850235A1 SE 1850235 A SE1850235 A SE 1850235A SE 1850235 A SE1850235 A SE 1850235A SE 1850235 A1 SE1850235 A1 SE 1850235A1
- Authority
- SE
- Sweden
- Prior art keywords
- power divider
- mode
- signal
- balun
- port
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 229910021389 graphene Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1466—Passive mixer arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1491—Arrangements to linearise a transconductance stage of a mixer arrangement
Abstract
A balanced resistive mixer (100) comprising graphene field effect transistors (108) operating as variable resistors, an LO power divider (102), an RF power divider (116); an IF balun (120); and a two-port network (148) having a first port (150) connected to a first output 130 of the RF power divider, a drain terminal (128) of the first G-FET and to a first input (140) of the IF balun and a second port (152) connected to a second output (134) of the RF power divider, a drain terminal (132) of the second G-FET, and to a second input (142) of the IF balun; wherein the LO power divider provides an LO-signal either in common mode or in differential mode, and the RF power divider is configured to provide an RF-signal in the opposite mode, the two port network being configured to operate as a short circuit for the LO-signal mode and as an open circuit for the RF-signal mode.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE1850235A SE541484C2 (en) | 2018-03-05 | 2018-03-05 | Balanced resistive frequency mixer |
PCT/SE2019/050181 WO2019172822A1 (en) | 2018-03-05 | 2019-03-04 | Balanced resistive frequency mixer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE1850235A SE541484C2 (en) | 2018-03-05 | 2018-03-05 | Balanced resistive frequency mixer |
Publications (2)
Publication Number | Publication Date |
---|---|
SE1850235A1 true SE1850235A1 (en) | 2019-09-06 |
SE541484C2 SE541484C2 (en) | 2019-10-15 |
Family
ID=67846282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE1850235A SE541484C2 (en) | 2018-03-05 | 2018-03-05 | Balanced resistive frequency mixer |
Country Status (2)
Country | Link |
---|---|
SE (1) | SE541484C2 (en) |
WO (1) | WO2019172822A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113014246B (en) * | 2021-02-20 | 2022-02-22 | 广东省科学院半导体研究所 | Voltage level shifter and electronic device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5799248A (en) * | 1995-12-20 | 1998-08-25 | Watkins-Johnson Company | Quasi-double balanced passive reflection FET mixer |
CA2524751C (en) * | 2004-10-27 | 2009-12-29 | Synergy Microwave Corporation | Passive reflection mixer |
US8131248B2 (en) * | 2008-10-02 | 2012-03-06 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Mixer with local oscillator feed-forward and method of mixing signals with local oscillator feed-forward |
-
2018
- 2018-03-05 SE SE1850235A patent/SE541484C2/en unknown
-
2019
- 2019-03-04 WO PCT/SE2019/050181 patent/WO2019172822A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2019172822A1 (en) | 2019-09-12 |
SE541484C2 (en) | 2019-10-15 |
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