SE0401320L - Koppardopade magnetiska halvledare - Google Patents

Koppardopade magnetiska halvledare

Info

Publication number
SE0401320L
SE0401320L SE0401320A SE0401320A SE0401320L SE 0401320 L SE0401320 L SE 0401320L SE 0401320 A SE0401320 A SE 0401320A SE 0401320 A SE0401320 A SE 0401320A SE 0401320 L SE0401320 L SE 0401320L
Authority
SE
Sweden
Prior art keywords
copper doped
doped magnetic
magnetic semiconductors
semiconductors
copper
Prior art date
Application number
SE0401320A
Other languages
English (en)
Other versions
SE528900C2 (sv
SE0401320D0 (sv
Original Assignee
Nm Spintronics Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nm Spintronics Ab filed Critical Nm Spintronics Ab
Priority to SE0401320A priority Critical patent/SE528900C2/sv
Publication of SE0401320D0 publication Critical patent/SE0401320D0/sv
Priority to CNA2005800161801A priority patent/CN1998068A/zh
Priority to PCT/SE2005/000711 priority patent/WO2005112085A1/en
Priority to KR1020067026636A priority patent/KR20070038966A/ko
Priority to JP2007527111A priority patent/JP2007538399A/ja
Priority to EP05745064A priority patent/EP1782458A1/en
Priority to US11/578,437 priority patent/US20080087972A1/en
Publication of SE0401320L publication Critical patent/SE0401320L/sv
Publication of SE528900C2 publication Critical patent/SE528900C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/227—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/193—Magnetic semiconductor compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0009—Antiferromagnetic materials, i.e. materials exhibiting a Néel transition temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/404—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of III-V type, e.g. In1-x Mnx As
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/407—Diluted non-magnetic ions in a magnetic cation-sublattice, e.g. perovskites, La1-x(Ba,Sr)xMnO3

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Hard Magnetic Materials (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Soft Magnetic Materials (AREA)
  • Physical Vapour Deposition (AREA)
SE0401320A 2004-05-18 2004-05-18 Koppardopade magnetiska halvledare SE528900C2 (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE0401320A SE528900C2 (sv) 2004-05-18 2004-05-18 Koppardopade magnetiska halvledare
CNA2005800161801A CN1998068A (zh) 2004-05-18 2005-05-17 铜掺杂磁半导体
PCT/SE2005/000711 WO2005112085A1 (en) 2004-05-18 2005-05-17 Copper doped magnetic semiconductors
KR1020067026636A KR20070038966A (ko) 2004-05-18 2005-05-17 구리가 도핑된 자성 반도체
JP2007527111A JP2007538399A (ja) 2004-05-18 2005-05-17 銅がドーピングされた磁性半導体
EP05745064A EP1782458A1 (en) 2004-05-18 2005-05-17 Copper doped magnetic semiconductors
US11/578,437 US20080087972A1 (en) 2004-05-18 2005-05-17 Copper Doped Magnetic Semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0401320A SE528900C2 (sv) 2004-05-18 2004-05-18 Koppardopade magnetiska halvledare

Publications (3)

Publication Number Publication Date
SE0401320D0 SE0401320D0 (sv) 2004-05-18
SE0401320L true SE0401320L (sv) 2005-11-19
SE528900C2 SE528900C2 (sv) 2007-03-13

Family

ID=32589780

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0401320A SE528900C2 (sv) 2004-05-18 2004-05-18 Koppardopade magnetiska halvledare

Country Status (7)

Country Link
US (1) US20080087972A1 (sv)
EP (1) EP1782458A1 (sv)
JP (1) JP2007538399A (sv)
KR (1) KR20070038966A (sv)
CN (1) CN1998068A (sv)
SE (1) SE528900C2 (sv)
WO (1) WO2005112085A1 (sv)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE0300352D0 (sv) * 2003-02-06 2003-02-06 Winto Konsult Ab Ferromagnetism in semiconductors
CN101887793A (zh) * 2010-06-29 2010-11-17 华南理工大学 一种掺杂铜的氮化铝基稀磁半导体纳米棒的制备方法
CN102627314B (zh) * 2010-08-20 2014-04-30 厦门大学 一维介孔晶的氧化锌基铜掺杂稀磁半导体及其制备方法
US8889534B1 (en) 2013-05-29 2014-11-18 Tokyo Electron Limited Solid state source introduction of dopants and additives for a plasma doping process
CN113555459B (zh) * 2021-07-20 2022-08-30 陕西师范大学 具有强发光特性的二硫化硒掺杂氧化铜

Also Published As

Publication number Publication date
JP2007538399A (ja) 2007-12-27
CN1998068A (zh) 2007-07-11
WO2005112085A1 (en) 2005-11-24
SE528900C2 (sv) 2007-03-13
SE0401320D0 (sv) 2004-05-18
KR20070038966A (ko) 2007-04-11
EP1782458A1 (en) 2007-05-09
US20080087972A1 (en) 2008-04-17

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