SE0102176L - Halvledarlaser med varierad tjocklek av kvantbrunnen - Google Patents

Halvledarlaser med varierad tjocklek av kvantbrunnen

Info

Publication number
SE0102176L
SE0102176L SE0102176A SE0102176A SE0102176L SE 0102176 L SE0102176 L SE 0102176L SE 0102176 A SE0102176 A SE 0102176A SE 0102176 A SE0102176 A SE 0102176A SE 0102176 L SE0102176 L SE 0102176L
Authority
SE
Sweden
Prior art keywords
quantum well
semiconductor lasers
varied thickness
quantum wells
conduction
Prior art date
Application number
SE0102176A
Other languages
English (en)
Other versions
SE0102176D0 (sv
Inventor
Richard Marcks Von Wurtemberg
Original Assignee
Mitel Semiconductor Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Semiconductor Ab filed Critical Mitel Semiconductor Ab
Publication of SE0102176D0 publication Critical patent/SE0102176D0/sv
Publication of SE0102176L publication Critical patent/SE0102176L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18397—Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/04—Gain spectral shaping, flattening
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
SE0102176A 2000-06-20 2001-06-20 Halvledarlaser med varierad tjocklek av kvantbrunnen SE0102176L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0014933A GB2363901A (en) 2000-06-20 2000-06-20 An optical emission device having quantum wells

Publications (2)

Publication Number Publication Date
SE0102176D0 SE0102176D0 (sv) 2001-06-20
SE0102176L true SE0102176L (sv) 2001-12-21

Family

ID=9893926

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0102176A SE0102176L (sv) 2000-06-20 2001-06-20 Halvledarlaser med varierad tjocklek av kvantbrunnen

Country Status (6)

Country Link
US (1) US20020018502A1 (sv)
CA (1) CA2350772A1 (sv)
DE (1) DE10129393A1 (sv)
FR (1) FR2811150A1 (sv)
GB (1) GB2363901A (sv)
SE (1) SE0102176L (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI225723B (en) * 2002-04-12 2004-12-21 Univ Nat Taiwan Two-pole different width multi-layered semiconductor quantum well laser with carrier redistribution to modulate light-emission wavelength
KR100693632B1 (ko) * 2005-02-18 2007-03-14 엘에스전선 주식회사 광대역 이득을 갖는 양자우물 레이저 다이오드
CN108598864A (zh) * 2018-01-21 2018-09-28 重庆师范大学 利用面发射激光器差频的宽波段可调谐中红外激光器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2212325B (en) * 1987-11-13 1990-10-03 Plessey Co Plc Solid state light source
US5224114A (en) * 1990-11-11 1993-06-29 Canon Kabushiki Kaisha Semiconductor laser devices with a plurality of light emitting layers having different bands gaps and methods for driving the same
JPH0661570A (ja) * 1992-08-04 1994-03-04 Matsushita Electric Ind Co Ltd 歪多重量子井戸半導体レーザ
JPH07170022A (ja) * 1993-12-16 1995-07-04 Mitsubishi Electric Corp 半導体レーザ装置
US5963568A (en) * 1996-07-01 1999-10-05 Xerox Corporation Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors
US5960024A (en) * 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6560262B1 (en) * 1999-01-26 2003-05-06 Triquint Technology Holding Co. Vertical cavity surface emitting laser array and a process for making same

Also Published As

Publication number Publication date
GB0014933D0 (en) 2000-08-09
DE10129393A1 (de) 2002-01-24
US20020018502A1 (en) 2002-02-14
SE0102176D0 (sv) 2001-06-20
FR2811150A1 (fr) 2002-01-04
CA2350772A1 (en) 2001-12-20
GB2363901A (en) 2002-01-09

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Legal Events

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