RU98118469A - INTEGRAL TRANSISTOR WITH OVERVOLTAGE PROTECTION - Google Patents

INTEGRAL TRANSISTOR WITH OVERVOLTAGE PROTECTION

Info

Publication number
RU98118469A
RU98118469A RU98118469/28A RU98118469A RU98118469A RU 98118469 A RU98118469 A RU 98118469A RU 98118469/28 A RU98118469/28 A RU 98118469/28A RU 98118469 A RU98118469 A RU 98118469A RU 98118469 A RU98118469 A RU 98118469A
Authority
RU
Russia
Prior art keywords
region
base
conductivity type
transistor
gate
Prior art date
Application number
RU98118469/28A
Other languages
Russian (ru)
Other versions
RU2175461C2 (en
Inventor
А.Ю. Новоселов
Н.Т. Гурин
С.Б. Бакланов
С.Г. Новиков
А.И. Гордеев
А.Ф. Королев
Ю.Д. Обмайкин
Original Assignee
АООТ ОКБ "Искра"
Filing date
Publication date
Application filed by АООТ ОКБ "Искра" filed Critical АООТ ОКБ "Искра"
Priority to RU98118469/28A priority Critical patent/RU2175461C2/en
Priority claimed from RU98118469/28A external-priority patent/RU2175461C2/en
Publication of RU98118469A publication Critical patent/RU98118469A/en
Application granted granted Critical
Publication of RU2175461C2 publication Critical patent/RU2175461C2/en

Links

Claims (1)

Интегральный мощный транзистор с защитой от перенапряжений, содержащий коллекторную область первого типа проводимости, базовую область второго типа проводимости, эмиттерную область первого типа проводимости, и канал второго типа проводимости, полевой транзистор сток которого соединен с базой, а исток является базовым контактом, отличающийся тем, что, с целью повышения защиты транзистора от перенапряжений, полевой транзистор расположен в пределах пассивной базовой области биполярного транзистора, при этом область стока диффузионно соединена с базовой областью, область базы, прилегающая к затвору со стороны базового контакта и находящаяся между затвором и эмиттерной областями может вытравливаться, затвор и коллектор соединяются обратно смещенным стабилитроном, либо они соединяются омически.An integrated power transistor with surge protection, containing the collector region of the first conductivity type, the base region of the second conductivity type, the emitter region of the first conductivity type, and the channel of the second conductivity type, the field effect transistor of which is connected to the base, and the source is the base contact, characterized in that, in order to increase the protection of the transistor against overvoltage, the field effect transistor is located within the passive base region of the bipolar transistor, while the drain region is diffusely is unified with the base region, the base region adjacent to the gate from the side of the base contact and located between the gate and the emitter regions can be etched, the gate and collector are connected back by a biased zener diode, or they are connected ohmically.
RU98118469/28A 1998-10-06 1998-10-06 Integrated-circuit transistor with surge-voltage protective gear RU2175461C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU98118469/28A RU2175461C2 (en) 1998-10-06 1998-10-06 Integrated-circuit transistor with surge-voltage protective gear

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU98118469/28A RU2175461C2 (en) 1998-10-06 1998-10-06 Integrated-circuit transistor with surge-voltage protective gear

Publications (2)

Publication Number Publication Date
RU98118469A true RU98118469A (en) 2000-08-20
RU2175461C2 RU2175461C2 (en) 2001-10-27

Family

ID=20211152

Family Applications (1)

Application Number Title Priority Date Filing Date
RU98118469/28A RU2175461C2 (en) 1998-10-06 1998-10-06 Integrated-circuit transistor with surge-voltage protective gear

Country Status (1)

Country Link
RU (1) RU2175461C2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2492552C1 (en) * 2012-04-05 2013-09-10 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" High-voltage self-aligned integrated diode

Similar Documents

Publication Publication Date Title
DE60127166D1 (en) DIGITAL GATE FIELD EFFECT TRANSISTORS AND ITS MANUFACTURE
DE60137927D1 (en) HALO IMPLANT-FREE, NON-MATCHING CONTACT ON A CHIP WITH HALO DIFFUSION AREAS
DE60222751D1 (en) FIELD EFFECT TRANSISTOR STRUCTURE AND MANUFACTURING METHOD
WO2000051167A3 (en) Monolithically integrated trench mosfet and schottky diode
KR940008075A (en) Electrostatic Discharge (ESD) Protection for Input Demand Operation Over Supply Voltage Range
ATE518251T1 (en) POWER MOSFET WITH A TRENCH GATE ELECTRODE
GB9921068D0 (en) Bipolar mosfet device
WO2003067665A3 (en) Cellular mosfet devices and their manufacture
KR860002153A (en) Semiconductor devices
KR900005595A (en) Active diode protects monolithic structure from reverse voltage
RU98118469A (en) INTEGRAL TRANSISTOR WITH OVERVOLTAGE PROTECTION
KR920001746A (en) Semiconductor Device with Schottky Junction
TW351851B (en) Semiconductor device
KR970024166A (en) Bimodal ESD Protection for DRAM Power Supplies and SCRs for DRAMs and Logic Circuits
IT1245794B (en) VERY RELIABLE SEMICONDUCTOR DEVICE
KR960009201A (en) Current Boost Mask-ROM
JPS648674A (en) Vertical mos-fet
KR980006499A (en) Semiconductor device having double junction structure and manufacturing method
RU2002127281A (en) BIPOLAR-FIELD TRANSISTOR WITH COMBINED SHUTTER
RU98119765A (en) BIPOLAR TRANSISTOR
KR860001488A (en) Semiconductor Devices with Bipolar Transistors and IIL
KR970053792A (en) Protective element of semiconductor device
JPS6459959A (en) Vertical field-effect transistor
KR860007749A (en) High Voltage Withstand Bipolar Transistors with SBD
KR970053970A (en) Protective element of semiconductor device