RU94028629A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- RU94028629A RU94028629A RU94028629/25A RU94028629A RU94028629A RU 94028629 A RU94028629 A RU 94028629A RU 94028629/25 A RU94028629/25 A RU 94028629/25A RU 94028629 A RU94028629 A RU 94028629A RU 94028629 A RU94028629 A RU 94028629A
- Authority
- RU
- Russia
- Prior art keywords
- laser
- semiconductor laser
- radiation
- source
- increase
- Prior art date
Links
Landscapes
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Abstract
FIELD: quantum electronics. SUBSTANCE: invention refers to design of semiconductor laser excited by current, light and electron beam. Semiconductor laser presents two-dimensional lattice of laser rules interconnected over metal surfaces of backings and epitaxial layers. Mirrors of resonator rules are attached on one side to heat remover and outer metallized surfaces are linked to source of pumping. Semiconductor laser can find use as source of high-power radiation in industrial technologies, in medicine, in pumping systems of solid-state lasers (including laser-driver of thermonuclear power stations with laser initiation). EFFECT: increased density of laser radiation, enhanced total efficiency, prolonged operational expectancy of laser.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU94028629/25A RU2119704C1 (en) | 1994-07-29 | 1994-07-29 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU94028629/25A RU2119704C1 (en) | 1994-07-29 | 1994-07-29 | Semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
RU94028629A true RU94028629A (en) | 1996-04-10 |
RU2119704C1 RU2119704C1 (en) | 1998-09-27 |
Family
ID=20159170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU94028629/25A RU2119704C1 (en) | 1994-07-29 | 1994-07-29 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
RU (1) | RU2119704C1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2712764C1 (en) * | 2019-06-11 | 2020-01-31 | Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФИАН) | Method for creation of two-dimensional matrix of laser diodes and two-dimensional matrix of laser diodes |
-
1994
- 1994-07-29 RU RU94028629/25A patent/RU2119704C1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
RU2119704C1 (en) | 1998-09-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20050730 |