RU94028629A - Semiconductor laser - Google Patents

Semiconductor laser

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Publication number
RU94028629A
RU94028629A RU94028629/25A RU94028629A RU94028629A RU 94028629 A RU94028629 A RU 94028629A RU 94028629/25 A RU94028629/25 A RU 94028629/25A RU 94028629 A RU94028629 A RU 94028629A RU 94028629 A RU94028629 A RU 94028629A
Authority
RU
Russia
Prior art keywords
laser
semiconductor laser
radiation
source
increase
Prior art date
Application number
RU94028629/25A
Other languages
Russian (ru)
Other versions
RU2119704C1 (en
Inventor
В.В. Безотосный
Original Assignee
Физический институт им.П.Н.Лебедева РАН
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Физический институт им.П.Н.Лебедева РАН filed Critical Физический институт им.П.Н.Лебедева РАН
Priority to RU94028629/25A priority Critical patent/RU2119704C1/en
Publication of RU94028629A publication Critical patent/RU94028629A/en
Application granted granted Critical
Publication of RU2119704C1 publication Critical patent/RU2119704C1/en

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  • Lasers (AREA)
  • Semiconductor Lasers (AREA)

Abstract

FIELD: quantum electronics. SUBSTANCE: invention refers to design of semiconductor laser excited by current, light and electron beam. Semiconductor laser presents two-dimensional lattice of laser rules interconnected over metal surfaces of backings and epitaxial layers. Mirrors of resonator rules are attached on one side to heat remover and outer metallized surfaces are linked to source of pumping. Semiconductor laser can find use as source of high-power radiation in industrial technologies, in medicine, in pumping systems of solid-state lasers (including laser-driver of thermonuclear power stations with laser initiation). EFFECT: increased density of laser radiation, enhanced total efficiency, prolonged operational expectancy of laser.

Claims (1)

Изобретение относится к квантовой электронике, в частности к конструкции полупроводниковых лазеров, возбуждаемых током, светом и электронным пучком. Для повышения плотности мощности лазерного излучения, повышешения общего КПД и увеличения ресурса работы лазера предложена конструкция лазера, представляющая собой двумерную решетку лазерных линеек, соединенных между собой по металлизированным поверхностям подложек и эпитаксиальным слоям. Зеркала резонаторов линеек с одной из сторон решетки закреплены на теплоотводе, а внешние металлизированные поверхности подключены к источнику накачки. Полупроводниковый лазер может найти применение в качестве источника излучения высокой мощности в технологии, медицине, системах накачки твердотельных лазеров (включая лазер-драйвер термоядерной электростанции с лазерным инициированием).The invention relates to quantum electronics, in particular to the design of semiconductor lasers excited by current, light and an electron beam. To increase the power density of laser radiation, to increase the overall efficiency and to increase the life of the laser, a laser design is proposed, which is a two-dimensional array of laser lines interconnected along metallized surfaces of substrates and epitaxial layers. The cavity resonator mirrors on one side of the grating are mounted on the heat sink, and the external metallized surfaces are connected to the pump source. A semiconductor laser can be used as a high-power radiation source in technology, medicine, and solid-state laser pumping systems (including a laser driver of a thermonuclear power plant with laser initiation).
RU94028629/25A 1994-07-29 1994-07-29 Semiconductor laser RU2119704C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU94028629/25A RU2119704C1 (en) 1994-07-29 1994-07-29 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU94028629/25A RU2119704C1 (en) 1994-07-29 1994-07-29 Semiconductor laser

Publications (2)

Publication Number Publication Date
RU94028629A true RU94028629A (en) 1996-04-10
RU2119704C1 RU2119704C1 (en) 1998-09-27

Family

ID=20159170

Family Applications (1)

Application Number Title Priority Date Filing Date
RU94028629/25A RU2119704C1 (en) 1994-07-29 1994-07-29 Semiconductor laser

Country Status (1)

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RU (1) RU2119704C1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2712764C1 (en) * 2019-06-11 2020-01-31 Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФИАН) Method for creation of two-dimensional matrix of laser diodes and two-dimensional matrix of laser diodes

Also Published As

Publication number Publication date
RU2119704C1 (en) 1998-09-27

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20050730