RU2752059C1 - Atomic layer deposition (ald) device - Google Patents

Abstract

FIELD: chemistry.

SUBSTANCE: invention relates to a device for atomic layer deposition (ALD) of a coating on a substrate surface. The specified device contains a reaction chamber located inside the vacuum chamber, with the possibility of placing a substrate or a batch of substrates, a gas inlet device and forlinia, made with the possibility of providing a horizontal gas flow in the reaction chamber. Forlinia is configured to exit the reaction chamber and extend inside the vacuum chamber to the outside of the vacuum chamber.

EFFECT: invention provides the possibility of simultaneous degassing and / or heating, ALD processing, including the ability to adjust the vacuum levels between the intermediate space and the reaction chamber, stabilize the temperature of the substrates in the reaction chamber and cooling, including adjusting the discharge pressure.

25 cl, 13 dwg

Description

This application is separated from the application No. 2019108360 (PCT / FI2016 / 050644) for the grant of a patent of the Russian Federation for an invention, filed on September 16, 2016.

The technical field to which the invention relates

The present invention generally relates to Atomic Layer Deposition (ALD). More specifically, but not exclusively, the invention relates to an Atomic Layer Deposition (ALD) system.

State of the art

This section provides useful information about the prior art without admitting any technical solutions described herein to be prior art.

The processing of batches of substrates to be coated by atomic layer deposition (ALD) is preferably performed with a system that provides ease of use, high quality coating, and optimized productivity.

Atomic layer deposition systems exist in the art that attempt to provide automatic substrate manipulation processing for high productivity. Several such systems have been disclosed, for example, in the publications below.

US 20070295274 discloses a batch processing platform used for ALD or CVD processing with high throughput and minimal footprint. In one embodiment, the processing platform comprises a transfer area in the atmosphere, at least one batch processing chamber with a buffer chamber and a support platform, and a transfer robot located in the transfer area, the transfer robot having at least one arm for transferring substrates containing several paddles for processing substrates.

EP2249379 discloses an ALD batch processing apparatus including: a chamber that can be maintained in a vacuum state; a substrate support unit located in the chamber and supporting a plurality of substrates to be stacked on top of each other at a predetermined pitch; a device for moving the substrates, moving the assembly for supporting the substrates up or down; a gas spraying device continuously spraying gas in a direction parallel to the direction of passage of each of the substrates stacked in the substrate support assembly; and a gas discharge device located on the opposite side of the chamber from the gas-spraying device for sucking in and discharging gas atomized from the gas-distributing device.

US4582720 discloses an apparatus for forming a non-monocrystalline layer comprising a substrate supply chamber, a reaction chamber and a substrate extraction chamber in series with a gate between adjacent chambers therefrom. One or more substrates are installed, with their surfaces arranged in vertical planes, on a holder and transferred to a substrate supply chamber, a reaction chamber and a substrate extraction chamber.

US20010013312 discloses an apparatus for growing thin films on a substrate surface by subjecting the substrate to alternating surface reactions of vapor-phase reagents. The device contains at least one process chamber having a hermetically sealed structure, at least one reaction chamber having a structure suitable for placement in the inner region of the specified process chamber, and containing a reaction space, at least part of which is movable, while provided an inlet connected to said reaction space for supplying said reagents to said reaction space; and an outlet connected to said reaction space for discharging excess reagents and reaction gases from said reaction space, as well as at least one substrate placed in said reaction space space.

US20100028122 discloses a device in which a plurality of ALD reactors are arranged relative to each other in a pattern, each ALD being configured to receive a batch of ALD treatment substrates, with each ALD having a top access reaction chamber. A lot of boot sequences are done with a boot robot.

WO2014080067 discloses a device for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates inside said substrate holder, configured to rotate the substrate holder to obtain a horizontal stack of vertically oriented substrates, and for lowering the substrate holder into the reaction chamber precipitation reactor to perform precipitation.

It is an object of embodiments of the present invention to provide an improved high throughput batch atomic deposition system.

The essence of the invention

According to a first exemplary aspect of the invention, there is provided an atomic layer deposition system, ALD, comprising:

- assembly of the reaction chamber containing

- vacuum chamber;

- a reaction chamber inside the vacuum chamber; and

- gas inlet and foreline, providing horizontal gas flow in the reaction chamber;

- a drive device containing the lid of the reaction chamber, and

- at least a first boot gateway node containing the first boot gateway,

wherein the drive device is configured to receive the substrate or a batch of substrates to be processed and transfer the substrate or batch of substrates through the first loading gate horizontally into the vacuum chamber,

the drive device is further configured to lower the substrate or a batch of substrates inside the vacuum chamber into the reaction chamber, thereby closing the reaction chamber with a lid.

A substrate or batch of substrates includes, for example: wafer, glass, silicon, metal or polymer substrates, printed circuit board (PCB) substrates, and 3D substrates.

In some exemplary embodiments, a flow-through reaction chamber (or cross-flow reactor) is provided in which gases within the reaction chamber pass through the reaction chamber from the gas inlet to the forlinia along the surfaces of the substrates, without (substantially) colliding with the transverse structures.

In some exemplary embodiments, the substrates are oriented in the direction of gas flow within the reaction chamber. In some exemplary embodiments, the surface of the substrate (atomic-layer deposited) within the reaction chamber is parallel to the direction of flow of the precursor gas within the reaction chamber.

In some exemplary embodiments, the substrates in a batch of substrates are oriented horizontally to form a vertical stack of horizontally oriented substrates. In some exemplary embodiments, the substrates in a batch of substrates are vertically oriented to form a horizontal stack of vertically oriented substrates.

In some exemplary embodiments, the gas inlet and the foreline line are located on opposite sides of the reaction chamber. In some exemplary embodiments, the gas inlet and the foreline are located on opposite sides of the reaction chamber.

In some exemplary embodiments, the driver receives a substrate or batch of substrates at a loading gate assembly or loading gate.

In some exemplary embodiments, the system further comprises a loader configured to transfer a substrate or batch of substrates to a loading gate assembly or loading gate.

In some exemplary embodiments, the drive device comprises a first horizontal drive at a first loading sluice assembly and a vertical drive at a reaction chamber assembly, the first horizontal drive being configured to receive a substrate or batch of substrates and transfer the substrate or batch of substrates through the first loading gate horizontally into a vacuum chamber and the vertical drive is configured to receive a substrate or a batch of substrates from the first horizontal drive and lower the substrate or a batch of substrates into the reaction chamber. In a certain exemplary embodiment, the vertical actuator is configured to raise the substrate holder carrying the substrate or stack of substrates to loosen the grip of the horizontal actuator on the substrate holder.

In some exemplary embodiments, the substrate or batch of substrates is discharged through an opening other than the one through which the substrate or batch of substrates is loaded.

In some exemplary embodiments, the system comprises a second boot gateway assembly comprising a second boot gateway.

In some exemplary embodiments, the system includes a first loading valve between the first loading sluice and the vacuum chamber loading port.

In some exemplary embodiments, the system includes a first loading valve between the first loading sluice and the vacuum chamber loading port and a second loading valve between the second loading sluice and the vacuum chamber loading port.

In some exemplary embodiments, the drive device comprises a second horizontal drive in a second loading sluice assembly. In some exemplary embodiments, the second horizontal actuator is configured to receive a substrate or batch of substrates from the vertical actuator.

In some exemplary embodiments, the first loading sluice forms a confined enclosed volume and includes a portion of the drive device.

The drive arrangement may be a drive device having parts in both the first loading sluice assembly and the reaction chamber assembly (as well as, in some embodiments, the second loading sluice assembly). In some exemplary embodiments, the system is configured to provide automated processing of substrates. In some exemplary embodiments, automated processing of substrates includes the automated transfer of a substrate or batch of substrates (without human intervention) from a first loading gate assembly or loading gate assembly to a reaction chamber of a reaction chamber assembly. In some exemplary embodiments, the automated processing of substrates further includes the automated transfer of the substrate or batch of substrates (without human intervention) from the reaction chamber to a first or second loading gate assembly or loading gate. In some exemplary embodiments, automated processing of a substrate includes the automated transfer of a substrate or batch of substrates (without human intervention) from a loading module to a first loading gate assembly or loading gate.

In some exemplary embodiments, the system comprises a loading module, such as an external hardware module, and / or a loading robot connected to a first loading gateway assembly.

In some exemplary embodiments, the vacuum chamber comprises at least one shielding member movable in front of at least one vacuum chamber loading opening.

In some exemplary embodiments, the at least one shielding element is movable by actuators and / or synchronously with the opening and closing of the loading valves.

In some exemplary embodiments, the system comprises at least one residual gas analyzer assembly comprising a residual gas analyzer (RGA) and coupled to a first and / or second loading sluice assembly and / or forlin. In some exemplary embodiments, the system is configured to control process timing based on information received from the RGA. The process synchronization may, for example, relate to the preprocessing time of the substrate or batch of substrates in the loading module, or to the timing of the precursor start moment.

In some exemplary embodiments, the RGA is configured to analyze the gas exiting the reaction chamber to allow user adjustment or automatic timing of the purge and / or delivery of reagents and / or pulses to the reaction chamber. In certain exemplary embodiments, the RGA is configured to detect a leak in the system.

In some exemplary embodiments, the implementation of the reaction chamber includes a removable or stationary element for directing the flow. In some exemplary embodiments, the flow guide member includes a plurality of holes. In some exemplary embodiments, the flow guide member is attached to a fixed or removable frame. In some exemplary elements, the flow guide is located on the gas inlet side of the reaction chamber. In some exemplary embodiments, the implementation of the reaction chamber includes a removable or stationary element for directing the flow on the outlet side of the reaction chamber. In some exemplary embodiments, the implementation of the reaction chamber contains both elements for directing the flow: one from the gas inlet side and one from the foreline (outlet side). In some exemplary embodiments, a controlled flow in the foreline is provided to affect pressure and flow within the reaction chamber assembly. The flow direction element (s) provide a controlled effect on gas flow and pressure within the reaction chamber assembly, thereby improving the ability to optimize coating uniformity.

In some exemplary embodiments, the system comprises at least one heated source assembly coupled to the reaction chamber assembly.

In some exemplary embodiments, the system includes source inputs extending into the interior of the vacuum chamber. In some exemplary embodiments, the system comprises a temperature stabilization device comprising source inlet lines for the reaction chamber bypassing the interior of the vacuum chamber to stabilize the temperature of the precursor chemicals within the inlet lines. This is in contrast to the presence of source inlet lines for the reaction chamber, which follow the shortest path from the outside of the vacuum chamber to the reaction chamber.

In some exemplary embodiments, the foreline extends within the vacuum chamber. Forlinia, in some exemplary embodiments, bypasses on its way out of the vacuum chamber to keep the forlinium hot (close to the temperature prevailing in the vacuum chamber) to prevent chemical absorption therein. Hot forlinia also increases chemical reactions to reduce the likelihood of diffusion of chemicals back into the reaction chamber.

In some exemplary embodiments, the system comprises a cassette for holding a substrate or batch of substrates to be processed. In some exemplary embodiments, the system comprises a cassette for holding a substrate or batch of substrates to be processed horizontally. In some exemplary embodiments, the substrate is processed without a cassette or the like.

In some exemplary embodiment, the substrate or batch of substrates is processed within the feed gate and reaction chamber assemblies by transferring the substrate or batch of substrates using a substrate holder. The substrate holder can only carry substrates. In some exemplary embodiments, the substrate holder comprises one or more pads for the substrate (s) on which they may rest. Alternatively, the substrate holder carries substrates contained in another substrate holder (eg, a cassette). The holder can be flipped in a vacuum chamber to change the orientation of the substrate in a batch of substrates from vertical to horizontal (or from horizontal to vertical).

In some exemplary embodiments, the system comprises a rotator configured to rotate a substrate or batch of substrates within a reaction chamber. Accordingly, in some exemplary embodiments, the system is configured to rotate a substrate or batch of substrates in a reaction chamber during atomic layer processing. In some exemplary embodiments, the substrate holder carrying the substrate or batch of substrates is a rotatable substrate holder.

In some exemplary embodiments, the system is configured to heat a substrate or batch of substrates at a first loading gate assembly. In some exemplary embodiments, the system is configured to cool a substrate or batch of substrates (ALD processed) at a first or second loading gate assembly. In some exemplary embodiments, the system is configured to heat or cool a substrate or batch of substrates in at least one of the first and second nodes of the loading gate.

In some exemplary embodiments, the system is configured to evacuate the loading lock to a pressure below the pressure applied to the reaction chamber.

In some exemplary embodiments, the system is configured to measure gases flowing from a substrate or batch of substrates to a loading gate.

According to a second exemplary aspect of the invention, there is provided a method of operating an Atomic Layer Deposition system, ALD, comprising the following:

transferring the substrate or batch of substrates to the first loading gateway;

transfer the substrate or a batch of substrates further from the first loading sluice through the first loading valve and the loading opening horizontally into the vacuum chamber;

receiving a substrate or a batch of substrates in a vacuum chamber and lowering the substrate or a batch of substrates into a reaction chamber inside the vacuum chamber, while the lowering closes the reaction chamber with a lid;

perform atomic layer deposition in the reaction chamber;

lifting the substrate or a batch of substrates from the reaction chamber;

receiving the substrate or batch of substrates from the reaction chamber and transferring the substrate or batch of substrates through the first or second loading valve and the loading port from the vacuum chamber to the first or second loading sluice.

In some exemplary embodiments, the method includes moving at least one shielding element in front of the at least one feed opening, respectively, prior to deposition of the atomic layer; and withdrawing the at least one shielding element from a position in front of the at least one feed opening, respectively, after atomic layer deposition.

In some exemplary embodiments, the method includes carrying a substrate or batches of substrates in a cassette (or substrate holder) in a system. In some exemplary embodiments, a single substrate or substrates are processed / processed without a cassette or the like.

In some exemplary embodiments, the method includes loading a substrate system or batch of substrates into a cassette prior to transfer to a loading gateway. In some exemplary embodiments, the method includes loading a substrate system or batch of substrates from a loading gate.

In some exemplary embodiments, the method provides a horizontal flow of gas into the reaction chamber. In some exemplary embodiments, the gas supply to the reaction chamber is transverse to the horizontal transfer direction of the substrate (s). In some exemplary embodiments, the gas supply to the reaction chamber is parallel to the horizontal transfer direction of the substrate (s).

In some exemplary embodiments, the pressure or flow rate of the gas or gases in the reaction chamber is controlled by controlling the gas inlet and / or gas outflow in the foreline.

In some exemplary embodiments, the implementation of one or more surfaces forming part of the reaction chamber and protected by metal oxide are used to increase chemical resistance and / or to increase the reflection of heat inward.

According to a third exemplary aspect, there is provided a method of operating an Atomic Layer Deposition System, ALD, including the following:

provide a shielding element outside the reaction chamber, but inside the vacuum chamber;

move the shielding element in the vacuum chamber in front of the loading opening of the vacuum chamber; and

performing atomic layer deposition in a reaction chamber inside a vacuum chamber.

According to a fourth exemplary aspect, there is provided an atomic layer deposition apparatus, ALD, comprising:

a reaction chamber inside the vacuum chamber; and

shielding element outside the reaction chamber, but inside the vacuum chamber, and the device is configured

moving the shielding element in the vacuum chamber in front of the loading opening of the vacuum chamber; and

performing atomic layer deposition in a reaction chamber within the vacuum chamber.

According to a fifth exemplary aspect, there is provided a method of operating an Atomic Layer Deposition system, ALD, including the following:

provide a reaction chamber within the vacuum chamber, as well as a foreline leading from the reaction chamber to the outside of the vacuum chamber, the method comprising the following:

maintaining heating in the foreline by making a bypass in the vacuum chamber on its way outside the vacuum chamber.

According to a sixth exemplary aspect, there is provided an atomic layer deposition apparatus, ALD, comprising:

a reaction chamber inside the vacuum chamber; and

forlinia making a detour on its way from the reaction chamber to the outside of the vacuum chamber.

In accordance with a seventh exemplary aspect, there is provided a method of operating an Atomic Layer Deposition System, ALD, including the following:

provide a reaction chamber inside the vacuum chamber;

performing atomic layer deposition on a sensitive substrate or a batch of sensitive substrates in a reaction chamber;

after deposition, transfer the substrate or a batch of sensitive substrates through the vacuum chamber to a loading lock connected to the vacuum chamber; and

cool the sensitive substrate or a batch of sensitive substrates in vacuum inside the loading lock.

Sensitive substrates include, for example, glass, silicon, printed circuit boards, and polymer substrates. In a further exemplary embodiment, the metal substrate, or a batch of metal substrates, is vacuum cooled within the loading lock.

According to an eighth exemplary aspect, there is provided an Atomic Layer Deposition apparatus, ALD, comprising:

a reaction chamber assembly containing a reaction chamber within the vacuum chamber;

forlinia connected to the reaction chamber and configured to remove gases from the reaction chamber;

a residual gas analyzer connected to the forlinia; and

a control unit connected to the reaction chamber unit and to the residual gas analyzer, and

the control unit is configured to control the timing of the process using the received information measured by the residual gas analyzer.

In some exemplary embodiments, the measured information comprises the moisture level of the gas exiting the reaction chamber. In some exemplary embodiments, the measured information comprises information about the amount of reaction products or by-products exiting the reaction chamber. In some exemplary embodiments, the control unit is configured to prevent the start of a precursor pulse if the received information exceeds a predetermined limit. In some exemplary embodiments, the control unit is configured to provide a supply of chemicals to the reaction chamber, thereby verifying proper operation of the reactor.

Vacuum cooling minimizes the risk of damage to the deposited substrate (s). In some exemplary embodiments, the vacuum pressure applied to the loading lock upon cooling is the same as the vacuum pressure applied to the vacuum chamber.

Various non-limiting exemplary aspects and embodiments of the present invention have been presented above. The above embodiments are used simply to explain selected aspects or steps that may be used in implementations of the present invention. Some embodiments may be presented only with reference to certain exemplary aspects of the invention. It should be understood that corresponding embodiments may also apply to other exemplary aspects. Any suitable combination of embodiments can be created.

For example, the present invention can be characterized by the following set of features:

a system for atomic layer deposition (ALD), comprising: a reaction chamber assembly containing a vacuum chamber; a reaction chamber inside the vacuum chamber; and a gas inlet and a foreline, configured to provide a horizontal flow of gas in the reaction chamber; - a drive device containing a lid of the reaction chamber, and - at least a first loading gate assembly containing a first loading gate, wherein the drive device is configured to receive a substrate or a batch of substrates to be processed and transfer the substrate or a batch of substrates through the first loading gate horizontally into the vacuum chamber, while the drive device is additionally configured to lower the substrate or a batch of substrates inside the vacuum chamber into the reaction chamber, thereby closing the reaction chamber with a lid.

The system of the present invention can be characterized in that the drive device comprises a first horizontal drive in a first loading sluice assembly and a vertical drive in a reaction chamber assembly, the first horizontal drive being configured to receive a substrate or a batch of substrates and transfer the substrate or a batch of substrates through the first the loading gateway horizontally into the vacuum chamber, and the vertical drive is configured to receive a substrate or a batch of substrates from the first horizontal drive and lower the substrate or a batch of substrates into the reaction chamber.

In another embodiment, the system further comprises a second boot gateway assembly comprising a second boot gateway.

According to another embodiment, the system further comprises a first loading valve between the first loading sluice and the vacuum chamber loading opening.

In another embodiment, the system further comprises a first loading valve between the first loading sluice and the vacuum chamber loading port and a second loading valve between the second loading sluice and the vacuum chamber loading port.

The system of the present invention can be characterized in that the drive device in the second unit of the loading sluice comprises a second horizontal drive.

The system according to the present invention can be characterized in that the vacuum chamber comprises at least one shielding element movable in front of at least one loading opening of the vacuum chamber.

The system according to the present invention can be characterized in that at least one shielding element is movable by means of drives and / or synchronously with the opening and closing of the loading valves.

In yet another embodiment, the system further comprises at least one residual gas analyzer assembly comprising a residual gas analyzer (RGA) and connected to the first and / or second loading sluice and / or forlinia assembly.

The system of the present invention can be characterized in that the foreline extends inside a vacuum chamber.

The system of the present invention can be characterized in that the reaction chamber contains at least one removable element for directing the flow.

In yet another embodiment, the system further comprises a heated source assembly coupled to the reaction chamber assembly.

The system of the present invention can be characterized in that the vacuum chamber comprises source inlets extending inside the vacuum chamber.

In yet another embodiment, the system further comprises a cassette for holding the substrate or batch of substrates to be processed.

In another embodiment, the system comprises a rotator configured to rotate a substrate or batch of substrates in a reaction chamber.

In another embodiment, the system further comprises a loading module, such as an equipment interface module, and / or a loading robot connected to the first loading gateway assembly.

The system of the present invention can be characterized in that the system is configured to heat or cool a substrate or batch of substrates in at least one of the first and second nodes of the loading gate.

The system of the present invention can be characterized in that the system is configured to evacuate the loading lock to a pressure below the pressure applied in the reaction chamber.

The system of the present invention can be characterized in that the system is configured to measure gases coming from a substrate or batch of substrates in a loading gate.

The present invention can also be characterized by the following set of features:

a method of operating an atomic layer deposition (ALD) system comprising: transferring a substrate or a batch of substrates to a first loading gateway; transfer the substrate or a batch of substrates further from the first loading sluice through the first loading valve and the loading opening horizontally into the vacuum chamber; receiving a substrate or a batch of substrates in a vacuum chamber and lowering the substrate or a batch of substrates into a reaction chamber inside the vacuum chamber, the fact of lowering providing a cover for the reaction chamber; perform atomic layer deposition in the reaction chamber; lifting the substrate or a batch of substrates from the reaction chamber; receiving the substrate or batch of substrates from the reaction chamber and transferring the substrate or batch of substrates through the first or second loading valve and the loading port from the vacuum chamber to the first or second loading sluice.

The method of the present invention may further include moving at least one shielding element in front of the at least one feed opening, respectively, prior to atomic layer deposition; and withdrawing the at least one shielding element from a position in front of the at least one feed opening, respectively, after atomic layer deposition.

The method of the present invention can include holding a substrate or a batch of substrates in a cassette in a system.

In one embodiment of the method of the present invention, the pressure or flow rate of the gas or gases in the reaction chamber is controlled by controlling the gas inlet and / or gas outflow in the foreline.

The present invention can also be characterized by the following set of features:

a method of operating a system for atomic layer deposition (ALD), including the following: provide a shielding element outside the reaction chamber, but inside the vacuum chamber; move the shielding element in the vacuum chamber in front of the loading opening of the vacuum chamber; and performing atomic layer deposition in a reaction chamber within the vacuum chamber.

The present invention can also be characterized by the following set of features:

an atomic layer deposition (ALD) device, comprising: a reaction chamber inside a vacuum chamber; and a shielding element outside the reaction chamber, but inside the vacuum chamber, and the device is configured to: move the shielding element in the vacuum chamber in front of the loading opening of the vacuum chamber; and performing atomic layer deposition in a reaction chamber within the vacuum chamber.

The present invention can also be characterized by the following set of features:

a method of operating a system for atomic layer deposition (ALD) comprising the following: providing a reaction chamber inside the vacuum chamber and a forlin leading from the reaction chamber to the outside of the vacuum chamber, the method comprising: maintaining heating in the forlin by performing the forlin bypassing in the vacuum chamber on its way outside the vacuum chamber.

The present invention can also be characterized by the following set of features:

an atomic layer deposition (ALD) device, comprising: a reaction chamber inside a vacuum chamber; and forlinia making a detour on its way from the reaction chamber to the outside of the vacuum chamber.

The present invention can also be characterized by the following set of features:

a method of operating an Atomic Layer Deposition (ALD) system comprising: providing a reaction chamber within a vacuum chamber; performing atomic layer deposition on a sensitive substrate or a batch of sensitive substrates in a reaction chamber; after deposition, transfer the substrate or a batch of sensitive substrates through the vacuum chamber to a loading lock connected to the vacuum chamber; and the loading sluice cools the sensitive substrate or the batch of sensitive substrates under vacuum.

The present invention can also be characterized by the following set of features:

an atomic layer deposition (ALD) device, comprising: a reaction chamber assembly containing a reaction chamber within a vacuum chamber; forlinia connected to the reaction chamber and configured to remove gases from the reaction chamber; a residual gas analyzer connected to the forlinia; and a control unit connected to the reaction chamber unit and to the residual gas analyzer, the control unit being configured to control the timing of the process using the received information measured by the residual gas analyzer.

Brief Description of Drawings

The invention will now be disclosed, by way of example only, with reference to the accompanying drawings, in which:

in fig. 1 is a schematic top view of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention;

in fig. 2 is a schematic side view of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention;

in fig. 3 is a schematic view of a reaction chamber assembly of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention;

in fig. 4 is a schematic view of the interior of a reaction chamber of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention;

in fig. 5 is a schematic view of the interior of a reaction chamber of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention;

in fig. 6 is a schematic view of the interior of a reaction chamber of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention;

in fig. 7 is a schematic view of the interior of a reaction chamber of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention;

in fig. 8 is a schematic side view of a reaction chamber of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention;

in fig. 9 is a schematic diagram of a loading of a reaction chamber assembly of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention;

in fig. 10 is a schematic top view of an Atomic Layer Deposition (ALD) system according to another embodiment of the invention;

in fig. 11 illustrates a flow chart of a method for operating an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention;

in fig. 12 is a schematic schematic view of a loading of a reaction chamber assembly of an Atomic Layer Deposition (ALD) system according to an alternative embodiment of the invention; and

in fig. 13 is a schematic view of the inside of a reaction chamber of an Atomic Layer Deposition (ALD) system in accordance with yet another embodiment of the invention.

Detailed disclosure of the invention

In the following description, Atomic Layer Deposition (ALD) technology is used as an example. The basics of the ALD growth mechanism are known in the art. ALD is a special chemical deposition method based on the sequential introduction of at least two reactive precursor forms into at least one substrate. However, it should be understood that one of these reactive precursors can be energy displaced using photostimulated ALD or PEALD, resulting in single precursor ALD processes. Thin films grown with ALD are dense, puncture-free and uniform in thickness.

Typically, at least one substrate is exposed to time-spaced pulses of the precursor in a reaction vessel to deposit the material on the surface of the substrate via sequential self-saturating surface reactions. In the context of this application, the term "ALD" includes all applicable ALD technologies and any equivalent or closely related technologies, such as, for example, the following subtypes of ALD: MLD (Molecular Layer Deposition) PEALD (Plasma Assisted Atomic Layer Deposition ) and photostimulated atomic layer deposition (also known as light-stimulated ALD).

The basic ALD deposition cycle consists of four sequential steps: Pulse A, Purge A, Pulse B, and Purge B. Pulse A consists of the first vapor precursor and pulse B of the other vapor precursor. Typically, during A purge and B purge, an inert gas and a vacuum pump are used to purge the gaseous reaction by-products and residual reactant molecules from the reaction space. The deposition sequence includes at least one deposition cycle. The deposition cycles are repeated until the deposition sequence results in a thin film or coating of the desired thickness. Deposition cycles can also be simpler or more complex. For example, the cycles may include three or more pulses of reagent vapor separated by purge steps, or some purge steps may be omitted. All of these deposition cycles form a deposition time sequence that is controlled by a logic block or microprocessor.

FIG. 1 shows a schematic top view of an atomic layer deposition (ALD) system 100 in accordance with one embodiment of the invention. The ALD system 100 comprises a first loading gate assembly 110 configured to receive substrates to be loaded into the deposition system. In one embodiment, substrates are placed in substrate holders, or cassettes, for loading, and the cassettes are processed by the cassette assembly 120 included in the ALD system 100. In one embodiment, the cassette assembly 120 is replaced by a person loading cassettes into the loading gate assembly 110. Alternatively, substrates are loaded into a substrate holder, or cassette, at the loading gate assembly 110. In one embodiment, the first loading gate assembly is also configured to receive substrates to be discharged from the system after deposition.

The ALD system 100 further comprises a reaction chamber assembly 160 including a single vacuum chamber. A first feed gate assembly 110 is coupled to a reaction chamber assembly 160 via a first gate assembly 230, as will be discussed below. System 100 further comprises a control unit 130, a chemical source unit 140 containing liquid and gas sources, and a heated chemical source unit 170. In a further embodiment, the ALD system 100 comprises a plurality of reaction chamber assemblies arranged in a row, in an embodiment with additional gate assemblies. Although the chemical sources in FIG. 1 are depicted from certain angles, in any embodiment, the location of the source unit 140 and the heated source unit 170 is selected differently depending on the situation.

The ALD system 100 further comprises, in one embodiment, a second loading sluice assembly 150 configured to receive substrates discharged after deposition. The second feed gate assembly is connected to the reaction chamber assembly 160 via a second gate assembly 250, as disclosed below.

The ALD system 100 further comprises a residual gas analyzer assembly containing a residual gas analyzer (RGA) 180 coupled to a first and / or second loading sluice assembly and / or to a foreline in front of the particle trap 190.

It should be noted that the assemblies of the ALD system 100 disclosed herein both above and below are individually detachable from the system, allowing for ease of access in the event of, for example, periodic maintenance.

FIG. 2 is a schematic side view of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention. The system shown in FIG. 2 contains the assemblies disclosed above with reference to FIG. one.

The first loading gate assembly 110 comprises a first horizontal actuator 210 configured to transfer a substrate holder (or cassette) loaded with substrates to be processed to the reaction chamber assembly 160. In an embodiment, the first horizontal actuator comprises a linear actuator. In the present description, the terms "cassette" and "substrate holder" are used interchangeably. The cassette in which the substrates are loaded into the loading gate assembly 110 is not necessarily the same substrate holder that carries the substrate (s) downstream in the system.

The first loading gateway assembly further comprises a first loading gateway 220. The cassettes / holders holding the substrates are loaded into the first loading gateway using the cassette assembly 120. The first loading gateway 220 includes a hatch through which the substrate cassette is inserted. In alternative embodiments, a flat substrate or bulk substrate or batch of substrates from a cassette (or other substrate holder) is loaded into a substrate holder waiting in the first loading gateway 220. Accordingly, the substrate or batch of substrates may be loaded with a cassette already carrying the substrate (s) , or reload from one cassette to a second cassette. In one embodiment, the first loading sluice further comprises a circulation temperature controller configured to maintain the loading sluice at a desired temperature using convection at atmospheric pressure.

In one embodiment, the boot gateway is configured to perform one or more of the following:

- heat the substrate (s);

- cool the substrate (s);

- to pump out the loading sluice to the vacuum of the intermediate space (that is, the space between the wall of the vacuum chamber and the wall of the reaction chamber);

- to pump out the loading sluice to a vacuum with a pressure lower than the pressure in the intermediate space and the ALD reaction conditions, for example, 50 μbar;

- purge the substrate (s) with a continuous flow of gas in order to equalize its / their temperature;

- purge the substrate (s) with a continuous flow of gas to dry and / or clean it / them;

- evenly heat it inside the loading sluice, for example, with a fan operating inside the loading sluice;

- analyze exhaust gases with the RGA 180.

In one embodiment, the loading sluice contains an inert gas atmosphere. In a further embodiment, the loading sluice contains a variable vacuum state that affects heating and degassing. In one embodiment, the loading sluice is heated by thermal or electromagnetic radiation, such as microwave radiation.

The first loading sluice 220 comprises, in one embodiment, a pump, such as a turbomolecular pump, adapted to evacuate the loading sluice. It should be noted that the first loading gate 220 includes, for example, gas connections, electrical connections and additional components made in a manner known in the art.

The first feed gate assembly 110 further comprises a first gate assembly 230, or feed valve, configured to connect the first feed gate 220 to the reaction chamber assembly 160. The first loading valve 230 is configured to open to allow the first horizontal actuator 210 to transfer the cassette holding the substrates to be processed into the reaction chamber assembly 160 and is also closable to close the reaction chamber assembly 160. In one embodiment, the first feed lock and the first feed valve are configured to discharge the reaction chamber assembly 160.

The reaction chamber assembly 160 comprises a vertical actuator 240 adapted to receive a cassette with substrates to be processed from the first horizontal actuator and lower said cassette into the reaction chamber at the bottom of the reaction chamber assembly 160 and to lift the cassette from there.

The second boot gateway node 150 of the ALD system 100 contains similar components to the first boot gateway node 110. The second node 150 loading gateway includes a second loading gateway 260 having properties and structures similar to the first loading gateway 220 disclosed above in this document. The second loading sluice assembly further comprises a second horizontal actuator 270 configured to transfer the processed cassette from the reaction chamber assembly 160 to the second loading sluice 260.

The second feed gate 150 further comprises a second gate assembly 250, or a second feed valve, configured to connect the second feed gate 260 to the reaction chamber assembly 160. The second loading valve 250 is configured to open to allow the second horizontal actuator 270 to transfer the cassette containing the treated substrates from the reaction chamber assembly 160, and is also closable to close the reaction chamber assembly 160.

Actuators 210, 240 (or actuators 210, 240, and 270) form the drive unit. In one embodiment, the drive device is configured to move the substrates horizontally and vertically to their proper position in the reaction chamber.

In accordance with one embodiment, during normal operation, the substrates or samples in the cassette are loaded into the loading gate 220 (or 260) at ambient pressure, and then the loading gate is closed. Depending on the program used, the loading sluice is evacuated and blown to the desired temperature and pressure as programmed for the loaded substrates. An example of loading includes: evacuation of the gaseous medium to 1 μbar (1 * 10 ^-6 bar), purging the loading sluice with an inert gas to a preselected pressure, heating the substrates with measuring the outgoing gases by means of the RGA 180 and regulating the vacuum level to the level of the intermediate space of the unit 160 reaction chamber. Heating of the substrate can be accelerated by the flow of air, for example, using a fan, heat radiation and / or cyclic pressure. In one embodiment, during transfer of the substrates to the reaction chamber assembly 160, the temperature of the substrates is the same as that of the reaction chamber assembly 160.

In one embodiment, the moisture level of the gases exiting the reaction chamber assembly 160 (or from the reaction chamber 420 of FIG. 4) is measured by an RGA 180 included in the system. This acquired information (moisture level) is used in one embodiment to control the initiation of ATL by means of control element 130.

In one embodiment, a control element 130 connected to the RGA 180 controls the starting point of the precursor pulse based on information received from the RGA 180. The RGA 180 measures, for example, the moisture level of the exhaust gases from the reaction chamber and / or the amount of reaction products or by-product, leaving the reaction chamber 420. RGA 180 is connected to the outlet of the reaction chamber 420 and / or forlin 630 (Fig. 6).

3 is a schematic view of a reaction chamber assembly 160 of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention. The reaction chamber assembly 160, containing the vacuum chamber 310, has an interior, called an interstitial space, which is maintained under vacuum during operation, loading and unloading. In one embodiment, the vacuum chamber 310 comprises a single vacuum chamber, that is, there is no separate outer housing for the vacuum chamber and the reaction chamber. In another embodiment, there is more than one reaction chamber. In a further embodiment, the lifting of substrates between multiple chambers within the vacuum chamber 310 or additional reaction chamber assemblies is performed in an embodiment with actuators 210, 270.

The reaction chamber assembly 160 comprises a vertical actuator 240 configured to move the substrate cassette vertically within the vacuum chamber 310. The same or different actuator is used to close the reaction chamber lid from the intermediate space.

The reaction chamber assembly, in one embodiment, further comprises drive elements for raising the shielding element in front of the feed opening 350 connected to the second feed valve 250. It should be understood that the other end of the vacuum chamber 310 includes a similar opening for connection to the first feed valve 230 and similar actuators. elements to raise the shielding element in front of the hole.

The vacuum chamber 310, in one embodiment, further comprises one or more viewing windows 330 for providing observation or adjustment of sensors in the vacuum chamber 310, and passageways 340 for connecting to unheated or heated sources in the heated source assembly 170 or to unheated sources in node 140 sources. In one embodiment, the passageways 340 are connected to the source (s) of the source assembly 170, with the individual passageways extending through the bottom of the wall of the vacuum chamber 310 (not shown in FIG. 4) connected to the source (s) of the source assembly 140 ... Both passageways 340, in one embodiment, through a portion of the side wall of the vacuum chamber 310, and passageways (not shown) from the source assembly 140, passing in one embodiment through the lower wall of the vacuum chamber 310, lead to the inlet of the reaction camera 420 (FIG. 4).

FIG. 4 is a schematic view of the inside of a reaction chamber assembly 160 of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention. The vacuum chamber 310 includes a reaction chamber 420, in one embodiment at the bottom of the vacuum chamber 310, the remainder of the interior space within the vacuum chamber forms an intermediate space. The vacuum chamber 310 further comprises a cassette holder cover 410 connected to a vertical drive and configured to be lowered to the top of the reaction chamber 420 to close it. The lid 410 of the cassette holder thus also forms the lid of the reaction chamber.

The cassette holder lid 410 is configured to receive the loaded cassette and lower the cassette into the reaction chamber 420. Lowering the cassette holder / reaction chamber lid 410 onto the reaction chamber is advantageous over moving the substrates upward. Since the substrates move the cover downward by their own weight, there is no need for additional external force. Possible displacements caused by thermal expansion outside the reaction chamber become insignificant. This prevents galling between the edge of the reaction chamber 420 and the lid 410 and hence the formation of particles that can arise from slight changes in temperature and pressure.

The vacuum chamber 310 further comprises a shielding element 440 that is movable from the front of the loading opening, for example, lowering when loading the chamber, and moving, for example, raising in front of the loading opening using actuators 320. The shielding element, in one embodiment, comprises a metal plate designed to prevent heating from the intermediate space heating the loading sluice on this side, i. e. the shielding element is configured to act as a heat reflector. In one embodiment, the shielding member 440 comprises a stack of metal plates. It is understood that the other end of the vacuum chamber contains a similar shielding element 440.

In one embodiment, the actuation of the shielding element 440 and the opening and closing of valves 230, 250 and / or cover 410 are synchronized and / or integrated with common actuators to accomplish both tasks.

The vacuum chamber 310 further comprises heaters 450, in one embodiment, radiation heaters, in an intermediate space on the inner surface of the chamber 310 for maintaining the vacuum chamber 310 and the reaction chamber 420 at the desired temperature. In one embodiment, the heaters are located outside the vacuum chamber 310, and thus the wall of the vacuum chamber 310 will conduct heat to the interior.

FIG. 5 is a schematic view of the inside of a reaction chamber assembly 160 of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention. Vacuum chamber 310 includes source inlet lines 510 coupled to heated source assembly 170 or source assembly 140. The source inlet lines 510 are movable a certain distance inside the vacuum chamber to stabilize its temperature and, accordingly, the temperature of the precursor chemicals before entering the reaction chamber 420. The reaction chamber 420 contains on its inlet side a flow direction element 520 made with the possibility of its location between the substrates to be coated and the incoming gases from the source lines 510. The flow guide is, in one embodiment, a removable flow guide. The flow guide member in one embodiment comprises a plurality of openings. The flow guiding element in one embodiment is a mesh, or a perforated plate, or the like.

FIG. 6 is a schematic view of the inside of a reaction chamber assembly 160 of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention. The reaction chamber 420, in one embodiment, includes a fixed or removable frame 620, and in one embodiment also includes a second flow guide element 520 '(a flow guide element 520 in a fixed or removable frame can also be installed on the inlet side). The second flow guide 520 'is, in one embodiment, a removable flow guide. The flow guiding element 520 ', in one embodiment, includes a plurality of openings. The flow guiding element 520 ', in one embodiment, is a mesh or perforated plate or the like. However, the holes in the second flow guiding element 520 ', in one embodiment, differ in number and / or shape and / or size compared to the holes in the flow guiding element 520.

The vacuum chamber 310 includes a vacuum or vent line, hereinafter referred to as forlinia 630, connected to a pump (not shown) for evacuating the vacuum chamber 310, and in one embodiment to a particle trap 190. Forline 630, in one embodiment, travels a certain distance within the vacuum chamber 310 to reduce heat loss through it, i.e., the forline 630 within the intermediate space is maintained at the same temperature as the vacuum chamber 310. The vacuum chamber 310 further comprises passageways 640 for heating elements. The staging area is further connected to the same or different foreline 630 via another path or paths, such as 640.

In one embodiment, the foreline 630 is connected directly to a particle trap 190 or pump to further reduce pressure and / or alter the behavior of gas flow in the reaction chamber.

FIG. 7 is a schematic view of the inside of a reaction chamber assembly 160 of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention. FIG. 7 shows the reaction chamber 420 in a closed configuration, that is, the lid 410 is lowered over the reaction chamber 420 to close the reaction chamber 420 from the intermediate space. The same closure action, in one embodiment, lowers the substrates to be coated into the reaction chamber. FIG. 7 additionally shows the shielding elements 440 in the closed position, that is, raised in front of the feed openings.

FIG. 8 is a schematic side view of a reaction chamber 420 of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention. FIG. 8 further shows a cassette 810 loaded into a reaction chamber. Cassette 810 contains a batch of substrates 801 to be processed. The substrates 801 are placed horizontally in the cassette to handle thin and / or flexible substrates. In one embodiment, substrates 801 are alternatively placed vertically. In yet another embodiment, the substrate is loaded into the reaction chamber without a cassette or substrate holder. In such an embodiment, the driver grips the substrate and loads it.

FIG. 8 shows an inlet side of a reaction chamber with a gas inlet 820, a (first) flow guide 520 and a vacuum (or outlet) side of a reaction chamber with a second flow guide 520 'and a foreline 630. The gas inlet 820 and foreline 630 are arranged in such a manner which provides a horizontal flow of precursor gases.

In one example of a coating process, the intermediate space is maintained at a constant pressure of 20-5 hPa by controlling the inlet and outlet gas streams. In one embodiment, the intermediate space is maintained at a constant pressure by controlling the flow of the exhaust gas. In a preferred embodiment, some of the gas typically exits the interstitial space via paths other than reaction chamber 420 and forlinium 630. Reaction chamber 420 operates at the pressures and temperatures required for the chemical processes and substrates to be treated. The pressure usually ranges from 10-0.1 hPa, but in some cases drops to 0.001 hPa. In a preferred embodiment, the intermediate space is at a higher pressure than the reaction chamber 420 so that reactive chemicals do not escape against pressure into the intermediate space.

In one embodiment, the substrates to be treated are heated in a loading sluice to a temperature used in the reaction chamber, for example, 80-160 ° C or 30-300 ° C, depending on the substrates and the desired process.

The flow through the gas inlet 820 into the reaction chamber 420 is controlled by controlling the volumetric or mass flow rate of the incoming gas and, in one embodiment, alternatively or additionally, by controlling the foreline pumping through pump parameters. By varying the flow rate of the reactive gas through the cassette with substrates, as needed, a longer time is provided for the reactions to proceed. This allows, for example, the placement of substrates of arbitrary shape or extremely large aspect ratios of the substrates to be coated, for example a depth to width ratio of 2000: 1. Flow control, in one embodiment, includes measuring pressures associated with the reaction chamber, interstitial space, gas inlet lines, and forlinia 630.

FIG. 9 is a schematic schematic view of loading substrates in a cassette into a reaction chamber assembly of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention. The cassette 810 is moved horizontally from the first loading sluice through the first loading valve into the vacuum chamber, picked up by the lid and attached cassette holder (i.e. cassette holder lid 410), and then, by means of the vertical drive 240, is lowered vertically into the reaction chamber 420.

FIG. 10 is a schematic top view of an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention including another cassette assembly. In this embodiment, cassette assembly 120 is replaced by a loading module 1010, such as an equipment front end module (EFEM). The loading module 1010 is located on one or both sides of the loading gateway assembly 110. Loading module 1010, as shown in FIG. 10, in one embodiment, is adapted for loading flat substrates such as wafers. Substrates can be placed in 1020 building blocks such as front opening uniform pods (FOUP). Loading module 1010 transfers substrates from building blocks 1020 to loading gate assembly 110. Loading module 1010 simultaneously transfers multiple substrates into a horizontal or vertical pouch or pouches. It can carry substrates individually or in a batch. Rotation of the substrate (s), if necessary, can be performed using a loading robot or similar device. Transferring the substrate (s) to the loading gateway is an automated and unattended process.

In other embodiments, the precursor chemicals are supplied to the reaction chamber 420 through channels in the lid 410 of the reaction chamber. In this embodiment, the gas inlet 820 is adapted to supply chemicals to the cover 410, with the distribution plate (flow guiding member) 520 positioned horizontally above the substrates. In this embodiment, the foreline 630 is located at the bottom of the reaction chamber 420.

11 shows a flow chart of a method for controlling an Atomic Layer Deposition (ALD) system in accordance with one embodiment of the invention. At 1100, a batch of substrates to be processed is loaded horizontally into a cassette 810, which is loaded into the first loading gate 110 at 1110 using the cassette assembly 120. At 1120, the cassette 810 is moved horizontally into the vacuum chamber 310 using the first horizontal drive 210 and is captured by the cover 420. coupled to a vertical drive 240. At step 1130, the cassette is lowered into the reaction chamber 420 and the shielding elements 440 move, in an embodiment, rise, in front of the feed opening. In step 1140, atomic layer deposition is performed in the reaction chamber 420. In step 1150, the cassette 810 is lifted out of the reaction chamber 420 and the shielding elements 440 are moved, in an embodiment, lowered, from the front side of the feed holes. At step 1160, the cassette is picked up by the first 210 or second horizontal drive 270 and transferred to the first 220 or second 260 loading gateway. In an embodiment with multiple reaction chambers, all of the reaction chambers are loaded in a similar manner from the loading gate 210.

FIG. 12 is a schematic schematic view of a loading of a reaction chamber assembly of an Atomic Layer Deposition (ALD) system in accordance with an alternative embodiment of the invention. In this embodiment, the substrates are vertically oriented in the holder 801 to form a horizontal stack of vertically oriented substrates. The operations of this embodiment are otherwise the same as those shown in FIG. 9. The flow of precursor gases is parallel to the surfaces of the substrates, so the direction of flow in FIG. 12 - "back - forward".

FIG. 13 is a schematic view of the inside of a reaction chamber assembly of an Atomic Layer Deposition (ALD) system in accordance with yet another embodiment of the invention. In this embodiment, substrates 801 with cassette 810 are carried by a rotating cassette holder through cover 1310. A portion 1305 of the holder holding substrates 801 (or cassette 810) is rotated by a motor 1320 incorporated into vertical drive 240. Rotator shaft 1315 extends within vertical drive 240 from the electric motor 1320 outside the vacuum chamber 310 to the rotating holder portion 1305 within the reaction chamber 420. In an alternative embodiment, the substrates from the motor 1320 are rotated by a bottom shaft passing through the bottom of the reaction chamber 420 independently of the lifting actuator 240. In yet another alternative embodiment, the substrates are rotated from the motor 1320 by a lateral shaft extending through the side wall of the reaction chamber 240.

In other embodiments, a sensitive substrate, such as a glass, silicon, printed circuit board, or polymer substrate, or a batch of sensitive substrates is treated. The reaction chamber 420 is provided within the vacuum chamber 310, and atomic layer deposition is performed on the sensitive substrate or batch of sensitive substrates in the reaction chamber 420. After deposition (ALD), the sensitive substrate or batch of sensitive substrates is transferred through the vacuum chamber 310 to the loading gate 220 or 260. connected to a vacuum chamber. The sensitive substrate or batch of sensitive substrates is vacuum cooled inside the loading lock. When cooling the sensitive substrate (s) in a vacuum, the risk of breakage of the substrate (s) is much lower.

Listed below are some of the technical results of one or more exemplary embodiments disclosed herein, without limiting the scope and interpretation of the claims. The technical result is the possibility of simultaneous degassing and / or heating, ALD processing, including the possibility of adjusting the vacuum levels between the intermediate space and the reaction chamber, stabilizing the temperature of the substrates in the reaction chamber and cooling, including adjusting the discharge pressure. Another technical result makes it possible to process sensitive, for example flexible, substrates laid horizontally with minimal stress. Another technical result is the loading of the deposition substrates without flipping. Another technical result is a lower system height due to the design of the vacuum chamber, which provides ease of loading and handling the substrates at the height of a human hand when moving horizontally to the reactor. Another technical result is the ability to lower the lid with substrates in the reaction chamber vertically so that there are no moving, possibly hot, metal-to-metal contacts that can create particles and which separate the intermediate pressure from the pressure in the reaction chamber and gases. Another technical result is improved temperature control using shielding elements and a long vacuum line running inside the vacuum chamber. Another technical result is ease of maintenance due to the modular design, which also allows an arrangement consisting of several reaction chambers in a row, possibly separated by additional shutter assemblies. Another technical effect is to minimize the formation of particles during vertical movement of the lid. Another technical result is an arrangement with several reaction chambers inside the vacuum chamber assembly in the same or a different intermediate space, so that one chamber can be loaded or unloaded independently of the operation in the other chamber.

It should be noted that some of the functions or method steps discussed earlier may be performed in a different order and / or concurrently with each other. In addition, one or more of the above-described functions or method steps may be optional or may be combined.

The foregoing description has provided, as non-limiting examples of specific implementations and embodiments of the invention, a complete and informative description of the best mode currently contemplated by the inventors for carrying out the invention. However, it will be apparent to a person skilled in the art that the invention is not limited to the details of the embodiments presented above, but may be implemented in other embodiments using equivalent means without deviating from the characteristics of the invention.

In addition, some of the features of the above-disclosed embodiments of this invention can be used to gain benefits without correspondingly using other features. As such, the above description should be considered merely as an illustration of the principles of the present invention and not as a limitation. Therefore, the scope of the invention is limited only by the appended claims.

Claims (25)

1. A device for atomic layer deposition (ALD) of a coating on a substrate surface, comprising a reaction chamber (420) located inside a vacuum chamber (310) with the possibility of placing a substrate or a batch of substrates, a gas inlet device (820) and a forlinium (630) made with the possibility of providing a horizontal flow of gas in the reaction chamber (420), while the foreline is configured to exit the reaction chamber and extend inside the vacuum chamber to the outside of the vacuum chamber. 2. The apparatus of claim. 1, wherein the foreline is configured with at least one turn within the reaction chamber. 3. The device according to claim 1 or 2, which is configured to receive in the reaction chamber a substrate or a batch of substrates to be atomic-layer processing. 4. Device according to any one of paragraphs. 1-3, wherein said substrate or batch of substrates is introduced into the reaction chamber in the lid (410) of the reaction chamber. 5. Device according to any one of paragraphs. 1-4, in which a substrate or batch of substrates is placed in a cassette (810). 6. Device according to any one of paragraphs. 1-5, further comprising a vertical actuator (240) connected to the lid (410) of the reaction chamber, wherein said vertical actuator is configured to move the lid (410) containing a substrate or a batch of substrates vertically relative to the reaction chamber. 7. An apparatus according to claim 6, wherein said vertical actuator is adapted to lower the cover (410) containing the substrate or batch of substrates inside the vacuum chamber into the reaction chamber (420) to close the reaction chamber with the lid (410). 8. Device according to any one of paragraphs. 1-7, further comprising a first horizontal drive (210) configured to transfer the substrate or batch of substrates to be atomic-layer processed through the first loading gate (220) horizontally into the vacuum chamber. 9. The apparatus of claim 8, wherein the vertical drive (240) is configured to receive a substrate or batch of substrates from said first horizontal drive (210). 10. An apparatus according to claim 8 or 9, further comprising a second horizontal actuator (270) adapted to transfer the processed substrate or batch of substrates from the reaction chamber to the second loading gate (260). 11. Device according to any one of paragraphs. 6-10, in which a vertical drive (240) and at least one horizontal drive (210, 270) form a drive device. 12. Device according to any one of paragraphs. 1-11, further comprising at least one shielding element (440) located outside the reaction chamber and inside the vacuum chamber, while said at least one shielding element is movable to a position in front of the loading opening (350) of the vacuum chamber (310 ). 13. An apparatus according to claim 12, wherein at least one shielding element (440) is configured to reflect heat. 14. A device according to claim 12 or 13, in which at least one shielding element (440) is movable by means of actuators (320) and / or synchronously with the opening and closing of the loading valves (230, 250). 15. Device according to any one of paragraphs. 8-14, further comprising a first loading valve (230) between the first loading sluice (220) and the loading opening of the vacuum chamber (310). 16. The apparatus of claim 15, further comprising a second loading valve (250) between the second loading sluice (260) and the loading opening of the vacuum chamber (310). 17. Device according to any one of paragraphs. 1-16, further comprising at least one residual gas analyzer assembly (180), comprising a residual gas analyzer (RGA) and connected to the first (110) and / or second loading sluice assembly (150) and / or forlinia (630). 18. Device according to any one of paragraphs. 1-17, in which the reaction chamber (420) contains at least one removable element (520, 520 ') for directing the flow. 19. Device according to any one of paragraphs. 1-18, further comprising a heated chemical source assembly (170) coupled to the reaction chamber. 20. Device according to any one of paragraphs. 1-19, in which the vacuum chamber contains chemical source inlet lines (510) extending inside the vacuum chamber (310). 21. Device according to any one of paragraphs. 1-20, comprising a rotator (1320) configured to rotate a substrate or batch of substrates in a reaction chamber (420). 22. The device according to claim 17, further comprising a loading module (1010) in the form of an equipment interface module and / or loading robot connected to the first node (110) of the loading gateway. 23. An apparatus according to claim 17, which is configured to heat or cool the substrate or batch of substrates in at least one of the first and second nodes (110, 150) of the loading gate. 24. Device according to any one of paragraphs. 8-23, which is configured to pump out the loading lock (220, 260) to a pressure below the pressure used in the reaction chamber (420). 25. Device according to any one of paragraphs. 8-24, which is configured to measure the moisture content of the exhaust gases from the reaction chamber and / or the amount of reaction products or by-product exiting the reaction chamber.

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