RU2667341C2 - Способ создания электропроводящих сетчатых оптически прозрачных и оптически непрозрачных структур - Google Patents

Способ создания электропроводящих сетчатых оптически прозрачных и оптически непрозрачных структур Download PDF

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RU2667341C2
RU2667341C2 RU2016144655A RU2016144655A RU2667341C2 RU 2667341 C2 RU2667341 C2 RU 2667341C2 RU 2016144655 A RU2016144655 A RU 2016144655A RU 2016144655 A RU2016144655 A RU 2016144655A RU 2667341 C2 RU2667341 C2 RU 2667341C2
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polymer
polymer template
template
frame
window
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RU2016144655A
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RU2016144655A3 (ja
RU2016144655A (ru
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Евгений Игоревич Мезенин
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Евгений Игоревич Мезенин
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Moulding By Coating Moulds (AREA)
  • Inorganic Fibers (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
RU2016144655A 2016-11-15 2016-11-15 Способ создания электропроводящих сетчатых оптически прозрачных и оптически непрозрачных структур RU2667341C2 (ru)

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RU2016144655A RU2667341C2 (ru) 2016-11-15 2016-11-15 Способ создания электропроводящих сетчатых оптически прозрачных и оптически непрозрачных структур

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RU2016144655A RU2667341C2 (ru) 2016-11-15 2016-11-15 Способ создания электропроводящих сетчатых оптически прозрачных и оптически непрозрачных структур

Publications (3)

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RU2016144655A3 RU2016144655A3 (ja) 2018-05-15
RU2016144655A RU2016144655A (ru) 2018-05-15
RU2667341C2 true RU2667341C2 (ru) 2018-09-18

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140090871A1 (en) * 2012-10-02 2014-04-03 Bluestone Global Tech Limited Graphene hybrid structures for transparent conductive electrodes
US20140103297A1 (en) * 2012-10-15 2014-04-17 The Board Of Trustees Of The Leland Stanford Junior University Organic material-based graphitic material
JP2015043283A (ja) * 2013-08-26 2015-03-05 独立行政法人産業技術総合研究所 電気化学デバイス電極材料用一次元ナノ構造体、エレクトロスピニング法による製造方法
RU2574249C2 (ru) * 2013-09-09 2016-02-10 Общество с ограниченной ответственностью "Прозрачные электроды" Сетчатая микро- и наноструктура, в частности для оптически прозрачных проводящих покрытий, и способ её получения
US20160319463A1 (en) * 2013-12-05 2016-11-03 Unist (Ulsan National Institute Of Science And Technology) Method of manufacturing transparent electrode using electrospinning method, and transparent electrode formed using same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140090871A1 (en) * 2012-10-02 2014-04-03 Bluestone Global Tech Limited Graphene hybrid structures for transparent conductive electrodes
US20140103297A1 (en) * 2012-10-15 2014-04-17 The Board Of Trustees Of The Leland Stanford Junior University Organic material-based graphitic material
JP2015043283A (ja) * 2013-08-26 2015-03-05 独立行政法人産業技術総合研究所 電気化学デバイス電極材料用一次元ナノ構造体、エレクトロスピニング法による製造方法
RU2574249C2 (ru) * 2013-09-09 2016-02-10 Общество с ограниченной ответственностью "Прозрачные электроды" Сетчатая микро- и наноструктура, в частности для оптически прозрачных проводящих покрытий, и способ её получения
US20160319463A1 (en) * 2013-12-05 2016-11-03 Unist (Ulsan National Institute Of Science And Technology) Method of manufacturing transparent electrode using electrospinning method, and transparent electrode formed using same

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RU2016144655A (ru) 2018-05-15

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Effective date: 20191116