RU2016144655A3 - - Google Patents
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- Publication number
- RU2016144655A3 RU2016144655A3 RU2016144655A RU2016144655A RU2016144655A3 RU 2016144655 A3 RU2016144655 A3 RU 2016144655A3 RU 2016144655 A RU2016144655 A RU 2016144655A RU 2016144655 A RU2016144655 A RU 2016144655A RU 2016144655 A3 RU2016144655 A3 RU 2016144655A3
- Authority
- RU
- Russia
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Fibers (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
- Moulding By Coating Moulds (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2016144655A RU2667341C2 (ru) | 2016-11-15 | 2016-11-15 | Способ создания электропроводящих сетчатых оптически прозрачных и оптически непрозрачных структур |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2016144655A RU2667341C2 (ru) | 2016-11-15 | 2016-11-15 | Способ создания электропроводящих сетчатых оптически прозрачных и оптически непрозрачных структур |
Publications (3)
Publication Number | Publication Date |
---|---|
RU2016144655A RU2016144655A (ru) | 2018-05-15 |
RU2016144655A3 true RU2016144655A3 (ja) | 2018-05-15 |
RU2667341C2 RU2667341C2 (ru) | 2018-09-18 |
Family
ID=62152022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2016144655A RU2667341C2 (ru) | 2016-11-15 | 2016-11-15 | Способ создания электропроводящих сетчатых оптически прозрачных и оптически непрозрачных структур |
Country Status (1)
Country | Link |
---|---|
RU (1) | RU2667341C2 (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140090871A1 (en) * | 2012-10-02 | 2014-04-03 | Bluestone Global Tech Limited | Graphene hybrid structures for transparent conductive electrodes |
US8957406B2 (en) * | 2012-10-15 | 2015-02-17 | The Board Of Trustees Of The Leland Stanford Junior University | Organic material-based graphitic material |
JP6186568B2 (ja) * | 2013-08-26 | 2017-08-30 | 国立研究開発法人産業技術総合研究所 | 電気化学デバイス電極材料用一次元ナノ構造体、エレクトロスピニング法による製造方法 |
KR101513148B1 (ko) * | 2013-12-05 | 2015-04-17 | 국립대학법인 울산과학기술대학교 산학협력단 | 전기 방사 방법을 이용한 투명 전극의 제조 방법 및 이를 이용하여 형성한 투명 전극 |
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2016
- 2016-11-15 RU RU2016144655A patent/RU2667341C2/ru not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
RU2667341C2 (ru) | 2018-09-18 |
RU2016144655A (ru) | 2018-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20191116 |