RU2562126C2 - Система литографии, датчик, элемент преобразователя и способ изготовления - Google Patents

Система литографии, датчик, элемент преобразователя и способ изготовления Download PDF

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Publication number
RU2562126C2
RU2562126C2 RU2012144624/07A RU2012144624A RU2562126C2 RU 2562126 C2 RU2562126 C2 RU 2562126C2 RU 2012144624/07 A RU2012144624/07 A RU 2012144624/07A RU 2012144624 A RU2012144624 A RU 2012144624A RU 2562126 C2 RU2562126 C2 RU 2562126C2
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RU
Russia
Prior art keywords
layer
elementary
charged particles
transducer element
beams
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RU2012144624/07A
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English (en)
Russian (ru)
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RU2012144624A (ru
Inventor
Рабах ХАНФАУГ
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МЭППЕР ЛИТОГРАФИ АйПи Б.В.
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Publication of RU2012144624A publication Critical patent/RU2012144624A/ru
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2443—Scintillation detectors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
RU2012144624/07A 2010-03-22 2011-03-22 Система литографии, датчик, элемент преобразователя и способ изготовления RU2562126C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL1037820A NL1037820C2 (en) 2010-03-22 2010-03-22 Lithography system, sensor, sensor surface element and method of manufacture.
NL1037820 2010-03-22
PCT/EP2011/054372 WO2011117253A1 (en) 2010-03-22 2011-03-22 Lithography system, sensor, converter element and method of manufacture

Publications (2)

Publication Number Publication Date
RU2012144624A RU2012144624A (ru) 2014-04-27
RU2562126C2 true RU2562126C2 (ru) 2015-09-10

Family

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Family Applications (1)

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RU2012144624/07A RU2562126C2 (ru) 2010-03-22 2011-03-22 Система литографии, датчик, элемент преобразователя и способ изготовления

Country Status (9)

Country Link
US (2) US8357906B2 (https=)
EP (1) EP2550671B1 (https=)
JP (1) JP5738973B2 (https=)
KR (1) KR101667770B1 (https=)
CN (1) CN102906850B (https=)
NL (1) NL1037820C2 (https=)
RU (1) RU2562126C2 (https=)
TW (1) TWI533350B (https=)
WO (1) WO2011117253A1 (https=)

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NL1037820C2 (en) 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
RU2576018C2 (ru) * 2010-11-13 2016-02-27 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Способ определения расстояния между двумя составляющими лучами в устройстве экспонирования с множеством составляющих лучей
NL2008174C2 (en) * 2012-01-24 2013-08-21 Mapper Lithography Ip Bv Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device.
CN104272427B (zh) 2012-03-08 2017-05-17 迈普尔平版印刷Ip有限公司 具有对准传感器和射束测量传感器的带电粒子光刻系统
TWI582542B (zh) * 2012-05-14 2017-05-11 瑪波微影Ｉｐ公司 在多子束曝光設備中用於決定子束位置的方法及用於決定兩個子束之間的距離的方法
KR102126061B1 (ko) 2013-11-28 2020-06-23 삼성전자주식회사 이미지 센서 및 그 제조 방법
CN108028161B (zh) * 2015-07-31 2020-07-03 Fei公司 用于带电粒子束装置的分段式检测器
NL2019503B1 (en) 2016-09-08 2018-08-31 Mapper Lithography Ip Bv Fabricating unique chips using a charged particle multi-beamlet lithography system
US10522472B2 (en) 2016-09-08 2019-12-31 Asml Netherlands B.V. Secure chips with serial numbers
US10418324B2 (en) 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
WO2018117275A1 (en) 2016-12-23 2018-06-28 Mapper Lithography Ip B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system

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Also Published As

Publication number Publication date
CN102906850B (zh) 2015-09-09
EP2550671B1 (en) 2016-03-16
CN102906850A (zh) 2013-01-30
NL1037820C2 (en) 2011-09-23
USRE47287E1 (en) 2019-03-12
JP5738973B2 (ja) 2015-06-24
JP2013522923A (ja) 2013-06-13
US20110253900A1 (en) 2011-10-20
US8357906B2 (en) 2013-01-22
TWI533350B (zh) 2016-05-11
WO2011117253A1 (en) 2011-09-29
KR20130067252A (ko) 2013-06-21
RU2012144624A (ru) 2014-04-27
TW201301332A (zh) 2013-01-01
KR101667770B1 (ko) 2016-10-19
EP2550671A1 (en) 2013-01-30

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