RU2021105779A - Детектор электромагнитного излучения, матрица, состоящая из таких детекторов, и способ регистрации излучения с помощью такой матрицы - Google Patents
Детектор электромагнитного излучения, матрица, состоящая из таких детекторов, и способ регистрации излучения с помощью такой матрицы Download PDFInfo
- Publication number
- RU2021105779A RU2021105779A RU2021105779A RU2021105779A RU2021105779A RU 2021105779 A RU2021105779 A RU 2021105779A RU 2021105779 A RU2021105779 A RU 2021105779A RU 2021105779 A RU2021105779 A RU 2021105779A RU 2021105779 A RU2021105779 A RU 2021105779A
- Authority
- RU
- Russia
- Prior art keywords
- photosensitive
- matrix
- elements
- electrodes
- radiation
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title claims 5
- 230000005855 radiation Effects 0.000 title claims 4
- 230000005670 electromagnetic radiation Effects 0.000 title claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229910021389 graphene Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0878—Sensors; antennas; probes; detectors
- G01R29/0885—Sensors; antennas; probes; detectors using optical probes, e.g. electro-optical, luminescent, glow discharge, or optical interferometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Claims (4)
1. Детектор электромагнитного излучения, содержащий фоточувствительный материал, в котором под действием падающего излучения возникает электрический сигнал, и два электрода, предназначенных для измерения величины возникающего сигнала, отличающийся тем, что указанные электроды выполняются в виде внешнего, окружающего круглую или эллиптическую область поверхности указанного фоточувствительного материала, облучаемой детектируемым излучением, и внутреннего, расположенного в центре указанной фоточувствительной области.
2. Детектор электромагнитного излучения согласно п.1, отличающийся тем, что в качестве фоточувствительного материала используется нанографитная пленка, нанесенная на подложку и состоящая из кристаллитов графита пластинчатой формы, представляющих собой совокупность из нескольких параллельных слоев графена и имеющих преимущественную ориентацию указанных слоев графена перпендикулярно подложке.
3. Фоточувствительная матрица, отличающаяся тем, что она состоит из фоточувствительных элементов (пикселей) выполненных согласно пп.1 и 2 и упорядоченных в виде столбцов, состоящих из элементов с электрически соединенными внешними электродами, и рядов, содержащих элементы с электрически соединенными внутренние электроды; при этом столбцы и ряды располагаются во взаимно перпендикулярных направлениях и электрически изолированы друг от друга.
4. Способ регистрации излучения, отличающийся тем, что он реализуется с помощью фоточувствительной матрицы, выполненной согласно п.3 и состоящий в поочередной регистрации величины электрических сигналов, возникающих в фоточувствительных элементах (пикселах) матрицы под действием детектора.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2021105779A RU2021105779A (ru) | 2021-03-06 | 2021-03-06 | Детектор электромагнитного излучения, матрица, состоящая из таких детекторов, и способ регистрации излучения с помощью такой матрицы |
| PCT/RU2021/050283 WO2022191736A1 (en) | 2021-03-06 | 2021-09-01 | An electromagnetic radiation detector, a matrix and a method for detecting radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2021105779A RU2021105779A (ru) | 2021-03-06 | 2021-03-06 | Детектор электромагнитного излучения, матрица, состоящая из таких детекторов, и способ регистрации излучения с помощью такой матрицы |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2021105779A true RU2021105779A (ru) | 2021-05-24 |
| RU2021105779A3 RU2021105779A3 (ru) | 2021-10-18 |
Family
ID=76033685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2021105779A RU2021105779A (ru) | 2021-03-06 | 2021-03-06 | Детектор электромагнитного излучения, матрица, состоящая из таких детекторов, и способ регистрации излучения с помощью такой матрицы |
Country Status (2)
| Country | Link |
|---|---|
| RU (1) | RU2021105779A (ru) |
| WO (1) | WO2022191736A1 (ru) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011049832A2 (en) * | 2009-10-19 | 2011-04-28 | Brookhaven Science Associates, Llc | 3d-trench electrode detectors |
| JP7197506B2 (ja) * | 2017-12-15 | 2022-12-27 | 株式会社堀場製作所 | シリコンドリフト型放射線検出素子、シリコンドリフト型放射線検出器及び放射線検出装置 |
| RU2699930C1 (ru) * | 2019-04-09 | 2019-09-11 | Акционерное общество "Концерн "Созвездие" | Быстродействующий фотодетектор |
-
2021
- 2021-03-06 RU RU2021105779A patent/RU2021105779A/ru unknown
- 2021-09-01 WO PCT/RU2021/050283 patent/WO2022191736A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| RU2021105779A3 (ru) | 2021-10-18 |
| WO2022191736A1 (en) | 2022-09-15 |
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