RU2016107114A3 - - Google Patents
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- RU2016107114A3 RU2016107114A3 RU2016107114A RU2016107114A RU2016107114A3 RU 2016107114 A3 RU2016107114 A3 RU 2016107114A3 RU 2016107114 A RU2016107114 A RU 2016107114A RU 2016107114 A RU2016107114 A RU 2016107114A RU 2016107114 A3 RU2016107114 A3 RU 2016107114A3
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- RU
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT001297A ITMI20131297A1 (it) | 2013-08-01 | 2013-08-01 | Cella fotovoltaica con banda proibita variabile |
ITMI2013A001297 | 2013-08-01 | ||
PCT/EP2014/066170 WO2015014788A1 (en) | 2013-08-01 | 2014-07-28 | Photovoltaic cell with variable band gap |
Publications (3)
Publication Number | Publication Date |
---|---|
RU2016107114A RU2016107114A (ru) | 2017-09-06 |
RU2016107114A3 true RU2016107114A3 (ru) | 2018-03-29 |
RU2657073C2 RU2657073C2 (ru) | 2018-06-08 |
Family
ID=49304112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2016107114A RU2657073C2 (ru) | 2013-08-01 | 2014-07-28 | Фотовольтаический элемент с переменной запрещенной зоной |
Country Status (8)
Country | Link |
---|---|
US (1) | US10109758B2 (ru) |
EP (1) | EP3028314B1 (ru) |
JP (1) | JP6405379B2 (ru) |
CN (1) | CN105474413B (ru) |
ES (1) | ES2655858T3 (ru) |
IT (1) | ITMI20131297A1 (ru) |
RU (1) | RU2657073C2 (ru) |
WO (1) | WO2015014788A1 (ru) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015120169A1 (en) | 2014-02-05 | 2015-08-13 | Solar Junction Corporation | Monolithic multijunction power converter |
DE102015006379B4 (de) * | 2015-05-18 | 2022-03-17 | Azur Space Solar Power Gmbh | Skalierbare Spannungsquelle |
US10930808B2 (en) | 2017-07-06 | 2021-02-23 | Array Photonics, Inc. | Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells |
WO2019067553A1 (en) | 2017-09-27 | 2019-04-04 | Solar Junction Corporation | SHORT-LENGTH WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING DILUTED NITRIDE LAYER |
WO2020185528A1 (en) | 2019-03-11 | 2020-09-17 | Array Photonics, Inc. | Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08204215A (ja) * | 1995-01-25 | 1996-08-09 | Japan Energy Corp | 直列接続型太陽電池 |
JP2003218374A (ja) * | 2002-01-23 | 2003-07-31 | Sharp Corp | Iii−v族太陽電池 |
US7071407B2 (en) * | 2002-10-31 | 2006-07-04 | Emcore Corporation | Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
US20100122724A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Four Junction Inverted Metamorphic Multijunction Solar Cell with Two Metamorphic Layers |
RU2308122C1 (ru) * | 2006-06-05 | 2007-10-10 | Институт физики полупроводников Сибирского отделения Российской академии наук | Каскадный солнечный элемент |
WO2008073469A1 (en) * | 2006-12-11 | 2008-06-19 | Lumenz, Llc | Zinc oxide multi-junction photovoltaic cells and optoelectronic devices |
US20090155952A1 (en) * | 2007-12-13 | 2009-06-18 | Emcore Corporation | Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells |
RU2382439C1 (ru) * | 2008-06-05 | 2010-02-20 | Общество с ограниченной ответственностью "Национальная инновационная компания "Новые энергетические проекты" (ООО "Национальная инновационная компания "НЭП") | Каскадный фотопреобразователь и способ его изготовления |
US20100122764A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells |
IT1394853B1 (it) * | 2009-07-21 | 2012-07-20 | Cesi Ct Elettrotecnico Sperimentale Italiano Giacinto Motta S P A | Cella fotovoltaica ad elevata efficienza di conversione |
JP5215284B2 (ja) * | 2009-12-25 | 2013-06-19 | シャープ株式会社 | 多接合型化合物半導体太陽電池 |
US20130074901A1 (en) * | 2011-09-22 | 2013-03-28 | Rosestreet Labs Energy, Inc. | Compositionally graded dilute group iii-v nitride cell with blocking layers for multijunction solar cell |
WO2013074530A2 (en) * | 2011-11-15 | 2013-05-23 | Solar Junction Corporation | High efficiency multijunction solar cells |
JP2013115414A (ja) * | 2011-12-01 | 2013-06-10 | Sharp Corp | 化合物半導体太陽電池セル |
JP2014220351A (ja) * | 2013-05-08 | 2014-11-20 | 日本電信電話株式会社 | 多接合太陽電池 |
-
2013
- 2013-08-01 IT IT001297A patent/ITMI20131297A1/it unknown
-
2014
- 2014-07-28 WO PCT/EP2014/066170 patent/WO2015014788A1/en active Application Filing
- 2014-07-28 ES ES14755600.5T patent/ES2655858T3/es active Active
- 2014-07-28 RU RU2016107114A patent/RU2657073C2/ru active
- 2014-07-28 US US14/909,219 patent/US10109758B2/en active Active
- 2014-07-28 CN CN201480043319.0A patent/CN105474413B/zh active Active
- 2014-07-28 JP JP2016530474A patent/JP6405379B2/ja active Active
- 2014-07-28 EP EP14755600.5A patent/EP3028314B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20160190376A1 (en) | 2016-06-30 |
ITMI20131297A1 (it) | 2015-02-02 |
JP2016533031A (ja) | 2016-10-20 |
EP3028314B1 (en) | 2017-10-25 |
CN105474413A (zh) | 2016-04-06 |
CN105474413B (zh) | 2017-10-03 |
RU2657073C2 (ru) | 2018-06-08 |
JP6405379B2 (ja) | 2018-10-17 |
EP3028314A1 (en) | 2016-06-08 |
WO2015014788A1 (en) | 2015-02-05 |
RU2016107114A (ru) | 2017-09-06 |
ES2655858T3 (es) | 2018-02-21 |
US10109758B2 (en) | 2018-10-23 |