JP2016533031A - バンドギャップ変動型の光起電セル - Google Patents
バンドギャップ変動型の光起電セル Download PDFInfo
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
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Abstract
Description
そのような電子デバイスは、主に、半導体材料から成り、この半導体材料は、価電子帯と伝導帯との間に禁制エネルギー帯(「バンドギャップ(band gap)」が位置付けられた固体結晶構造によって特徴付けられる。バンドギャップは、通常は自由電子に対して抑制されるエネルギー区間を定める。しかしながら、太陽放射が、太陽セルにおけるそのようなタイプの材料に当たるとき、より低いエネルギー帯を占める電子が、エネルギージャンプをしてバンドギャップを超える点へと励起されて、より高いエネルギー帯に達することがある。例えば、半導体の価電子帯の中の電子が、入射太陽放射の光子から十分なエネルギーを吸収するとき、そのような電子は、バンドギャップを超え、伝導帯に達することがある。
本発明の1つの態様は、モノリシック光起電セルに関係する。前記モノリシック光起電セルは、少なくとも1つの接合部を含む。前記少なくとも1つの接合部の各接合部は、第1の導電型のドープされた半導体材料によって形成されるベースと、第1の導電型とは反対の第2の導電型のドープされた半導体材料によって形成されるエミッタとを含む。前記エミッタは、第1の方向に従ってベース上に積層される。前記少なくとも1つの接合部のうちの少なくとも1つの接合部のベースの、および/またはエミッタの半導体材料は、少なくとも1つの第1の元素と、第2の元素との化合物によって形成される半導体材料である。ベースの、および/またはエミッタの前記半導体材料のバンドギャップおよび格子定数は、前記第2の元素に対する前記化合物における前記第1の元素の濃度に依存する。第2の元素に対する前記化合物における第1の元素の前記濃度は、前記第1の方向に沿って均一でなく、前記ベースおよび/またはエミッタの下位部分で第1の値に等しく、前記ベースおよび/またはエミッタの上位部分で第1の値未満の第2の値に等しい。前記上位部分は、第1の方向に従って前記下位部分の上側にある。
有利な実施形態は、従属請求項に記載されている。
本発明の1つまたは複数の実施形態による解決策、ならびに追加の特徴およびその利点は、添付の図面と併せて読まれるべき、限定ではなく純粋に非制限的な指示としてのみ与えられる以下の詳細な説明を参照することによってより良く理解されよう。この点に関して、図は、必ずしも縮尺通りであるとは限らず、別段、異なって指示されない限り、説明された構造および手順を概念的に例示するものと単に意図されるにすぎないことが明示的に意図されている。
障壁層118が、好ましくは、トンネルダイオード108と中間セル105bとの間に配置され、その存在は、層120の中で光生成される電荷キャリアをセルの空間電荷領域へと向かわせる電場を生み出すことと、層120に中で光生成される電荷キャリアの表面再結合効果を抑えることとを可能にし、それによって、光起電セル100の変換効率を高めることになる。
障壁層128の上側に形成される上位セル105cは、第1の導電型、例えば、p型の第1の半導体材料層130(ベース)を含み、意図的に非ドープの半導体材料のスペーサ層132が、好ましくは、ベース130の上側に形成される。ベース130の導電型とは反対の導電型、例えば、n型の第3の半導体材料層134(エミッタ)が、スペーサ層132の上側に形成される。窓層136が、好ましくは、エミッタ134の上側に形成される。
トンネルダイオード110は、第2の導電型、考慮される例ではn型のドープされたIII−V材料から形成される第1の層と、反対の導電型、考慮される例ではp型のドープされたIII−V材料から形成される第2の層とによって実現され得る。
製造プロセスの観点からすれば、光起電セル100は、適切な導電型、考慮される例ではp型の、かつ適度なドーパント濃度を伴う、下位セル105aのベース112を形成する半導体材料、考慮される例ではGeの基板から製作される。具体的には、沈着および/または拡散のプロセスを通じて、ベース112として働くそのような基板から始まって、下位セル105aのエミッタ114が形成される。窓136に至るまでの光起電セル100の後に続く層はすべて、強固な基板として下位セル105aのエミッタ114およびベース112を使用して、分子ビームエピタキシー(Molecular Beam Epitaxy)「MBE」などのエピタキシャル成長の適した技法によって、または金属有機化学蒸着(Metal-Organic Chemical Vapour Deposition)「MOCVD」によって得られる。
当然ながら、局所的かつ具体的な要件を満足させるために、当業者は、上述の解決策に多くの修正および変更を加えることができる。具体的には、本発明は、その好ましい実施形態(複数可)を参照して、ある程度の特殊性とともに説明されてきたが、形態および細部における様々な省略、置換、および改変、ならびに他の実施形態が可能であり、その上、本発明の任意の開示された実施形態に関連して説明される具体的な要素および/または方法ステップが、設計選択の概括的事柄として任意の他の実施形態に組み込まれてもよいことが明白に意図されていることを理解すべきである。
Claims (8)
- 少なくとも1つの接合部を含むモノリシック光起電セルであって、前記少なくとも1つの接合部の各接合部は、第1の導電型のドープされた半導体材料によって形成されるベースと、前記第1の導電型とは反対の第2の導電型のドープされた半導体材料によって形成されるエミッタとを含み、前記エミッタは、第1の方向に従って前記ベース上に積層され、前記少なくとも1つの接合部のうちの少なくとも1つの接合部の前記ベースの、および/または前記エミッタの前記半導体材料は、少なくとも1つの第1の元素と、第2の元素との化合物によって形成される半導体材料であり、前記ベースの、および/または前記エミッタの前記半導体材料のバンドギャップおよび格子定数は、前記第2の元素に対する前記化合物における前記第1の元素の濃度に依存するモノリシック光起電セルにおいて、
前記第2の元素に対する前記化合物における前記第1の元素の前記濃度は、前記第1の方向に沿って均一でなく、前記ベースおよび/または前記エミッタの下位部分で第1の値に等しく、前記ベースおよび/または前記エミッタの上位部分で前記第1の値未満の第2の値に等しく、前記上位部分は、前記第1の方向に従って前記下位部分の上側にある
ことを特徴とする、モノリシック光起電セル。 - 前記第1の方向に沿って、前記濃度が非増加関数に基づいて変化する、請求項1に記載の光起電セル。
- 前記第1の方向に沿って、前記濃度が減少関数に基づいて変化する、請求項2に記載の光起電セル。
- 第1の格子定数を有するさらなる材料によって形成される基板をさらに備え、前記少なくとも1つの接合部は、前記第1の方向に従って前記基板上に積層され、前記第1の元素の前記濃度は、前記少なくとも1つの接合部のうちの前記少なくとも1つの前記ベースおよび/またはエミッタの前記半導体材料が、臨界厚さ未満の厚さを前記第1の方向に沿って有する前記ベースおよび/または前記エミッタの一部分に、前記第1の格子定数とは異なる第2の格子定数を有するようにしてあり、前記臨界厚さは、前記第1の格子定数と前記第2の格子定数との差に反比例する、請求項1〜3のいずれか一項に記載の光起電セル。
- − 前記少なくとも1つの接合部は、第1の接合部と、第2の接合部と、第3の接合部とを含み、前記第2の接合部は、前記第1の方向に従って前記第1の接合部上に積層され、前記第3の接合部は、前記第1の接合部に従って前記第2の接合部上に積層され、
− 前記少なくとも1つの接合部のうちの前記少なくとも1つは、前記第2の接合部である、
請求項1〜4のいずれか一項に記載の光起電セル。 - 前記少なくとも1つの接合部のうちの前記少なくとも1つの前記ベースおよび/または前記エミッタの前記半導体材料は、インジウム/ガリウム/ヒ素化合物によって形成され、前記第1の元素は、インジウムであり、前記第2の元素は、ガリウムである、請求項1〜5のいずれか一項に記載の光起電セル。
- − 前記第1の濃度値は、前記化合物におけるインジウム/ガリウム比率が、3〜10%に等しくなるようにしてあり、
− 前記第2の濃度値は、前記化合物におけるインジウム/ガリウム比率が、0〜2%に等しくなるようにしてある、
請求項6に記載の光起電セル。 - 少なくとも1つの接合部を含む光起電セルを製造するための方法であって、
− 第1の導電型のドープされた半導体材料によってベースを形成し、前記第1の導電型とは反対の第2の導電型のドープされた半導体材料によってエミッタを形成する、前記少なくとも1つの接合部を生成するステップを含み、前記エミッタは、第1の方向に従って前記ベース上に積層され、前記少なくとも1つの接合部のうちの少なくとも1つの接合部の前記ベースの、および/または前記エミッタの前記半導体材料は、少なくとも1つの第1の元素と、第2の元素との化合物によって形成される半導体材料であり、前記ベースの、および/または前記エミッタの前記半導体材料のバンドギャップおよび格子定数は、前記第2の元素に対する前記化合物における前記第1の元素の濃度に依存する、方法において、
前記少なくとも1つの接合部のうちの少なくとも1つの接合部の前記ベースおよび/または前記エミッタを形成する前記ステップは、
− 前記第2の元素に対する前記化合物における前記第1の元素の前記濃度が、前記第1の方向に沿って均一でなく、前記ベースおよび/または前記エミッタの下位部分で第1の値に等しく、前記ベースおよび/または前記エミッタの上位部分で前記第1の値未満の第2の値に等しくなるような方式で、前記ベースおよび/または前記エミッタをエピタキシャルに成長させるステップであって、前記上位部分は、前記第1の方向に従って前記下位部分の上側にある、ステップを含む
ことを特徴とする方法。
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