RU2013109843A - METHOD FOR REMOVING OXIDES FROM SURFACE OF SILICON PLATES - Google Patents
METHOD FOR REMOVING OXIDES FROM SURFACE OF SILICON PLATES Download PDFInfo
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- RU2013109843A RU2013109843A RU2013109843/28A RU2013109843A RU2013109843A RU 2013109843 A RU2013109843 A RU 2013109843A RU 2013109843/28 A RU2013109843/28 A RU 2013109843/28A RU 2013109843 A RU2013109843 A RU 2013109843A RU 2013109843 A RU2013109843 A RU 2013109843A
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- silicon wafers
- silicon
- before spraying
- processing
- wafers before
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Abstract
Обработка кремниевых пластин перед напылением, включающая травление кремния с полным удалением остатков окисла с поверхности кремниевых пластин перед напылением обратной стороны, отличающаяся тем, что в качестве травителя используется раствор, в состав которого входят бифторид аммония и деионизованная вода, компоненты раствора выбираются в следующем соотношении:NHHF:HO=1:26,время обработки остатков окисла с кремниевых пластин при этом составляет не более 10 с при комнатной температуре. Processing of silicon wafers before spraying, including etching of silicon with the complete removal of oxide residues from the surface of silicon wafers before spraying the reverse side, characterized in that a solution containing ammonium bifluoride and deionized water is used as an etchant, the solution components are selected in the following ratio: NHHF: HO = 1: 26, the processing time of the oxide residues from silicon wafers in this case is no more than 10 s at room temperature.
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RU2013109843/28A RU2534444C2 (en) | 2013-03-05 | 2013-03-05 | Method of removing oxide from silicon plate surface |
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RU2013109843/28A RU2534444C2 (en) | 2013-03-05 | 2013-03-05 | Method of removing oxide from silicon plate surface |
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RU2013109843A true RU2013109843A (en) | 2014-09-10 |
RU2534444C2 RU2534444C2 (en) | 2014-11-27 |
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RU2013109843/28A RU2534444C2 (en) | 2013-03-05 | 2013-03-05 | Method of removing oxide from silicon plate surface |
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RU2757762C1 (en) * | 2021-03-30 | 2021-10-21 | Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук | Method for manufacturing thin-film tunnel junctions by the method of separate lithography |
Family Cites Families (5)
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RU2156015C2 (en) * | 1997-03-11 | 2000-09-10 | Волков Владимир Владимирович | Manufacturing process for chip with single-sided contacts for high-power light-emitting diode |
RU2119462C1 (en) * | 1997-03-12 | 1998-09-27 | Новочеркасский государственный технический университет | Etching liquor |
RU2323503C2 (en) * | 2006-06-05 | 2008-04-27 | Общество с ограниченной ответственностью "Кристалл" (ООО "Кристалл") | Method for treatment of single-crystalline silicon wafer surface |
KR100741991B1 (en) * | 2006-06-29 | 2007-07-23 | 삼성전자주식회사 | Silicon oxide etching solution and method of forming contact hole using the same |
RU2376676C1 (en) * | 2008-07-17 | 2009-12-20 | Государственное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Method of processing silicon crystals |
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RU2534444C2 (en) | 2014-11-27 |
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Effective date: 20150306 |