RU2011143924A

RU2011143924A - METHOD FOR DETERMINING THERMAL RESISTANCE OF DIGITAL INTEGRAL ICS

Info

Publication number: RU2011143924A
Application number: RU2011143924/28A
Authority: RU
Inventors: Виктор Васильевич Юдин; Вячеслав Андреевич Сергеев; Владимир Александрович Ламзин
Priority date: 2011-10-28
Filing date: 2011-10-28
Publication date: 2013-05-10
Also published as: RU2490657C2

Abstract

1. Способ определения теплового сопротивления цифровых интегральных микросхем, включающий нагрев и измерение изменения электрической греющей мощности одного логического элемента, выбранного в качестве источника тепла, измерение изменения напряжения температурочувствительного параметра другого логического элемента, выбранного в качестве датчика температуры, определение теплового сопротивления как отношение изменения напряжения температурочувствительного параметра к изменению электрической греющей мощности и известному температурному коэффициенту напряжения температурочувствительного параметра, отличающийся тем, что нагрев осуществляют путем пропускания тока через p-n переход логического элемента, выбранного в качестве источника тепла, образованный сильнолегированной p+ областью, электрически соединенной с выходом микросхемы и n подложкой p-МОП транзисторов, электрически соединенной с выводом шины питания микросхемы, измеряют изменение напряжения температурочувствительного параметра на p-n переходе логического элемента, выбранного в качестве датчика температуры, образованным сильнолегированной n+ областью, электрически соединенной с выходом микросхемы, и p-карманом n-МОП транзисторов, электрически соединенным с выводом общей шины питания микросхемы, причем вывод шины питания микросхемы электрически соединяют с выводом общей шины питания микросхемы, а в качестве напряжения температурочувствительного параметра выбирают прямое падение напряжения на p-n переходе при протекании прямого измерительного тока, и изменение электрической греющей мощности определяют как произведение проходящего1. A method for determining the thermal resistance of digital integrated circuits, including heating and measuring a change in electric heating power of one logic element selected as a heat source, measuring a voltage change of a temperature-sensitive parameter of another logic element selected as a temperature sensor, determining thermal resistance as a ratio of voltage change temperature-sensitive parameter to changes in electric heating power and a known temperature a voltage coefficient of the temperature-sensitive parameter, characterized in that the heating is carried out by passing current through the pn junction of a logic element selected as a heat source, formed by a highly doped p + region, electrically connected to the output of the microcircuit and n substrate of p-MOS transistors, electrically connected to the bus terminal the power of the microcircuit, measure the voltage change of the temperature-sensitive parameter at the pn junction of the logic element selected as the temp sensor a circuit formed by a heavily doped n + region, electrically connected to the output of the microcircuit, and a p-pocket of n-MOS transistors, electrically connected to the output of the common power bus of the microcircuit, and the output of the power bus of the microcircuit is electrically connected to the output of the common power bus of the microcircuit, and as a temperature-sensitive voltage of the parameter, a direct voltage drop at the pn junction during the flow of the direct measuring current is selected, and the change in the electric heating power is determined as the product of the passing

Claims

1. A method for determining the thermal resistance of digital integrated circuits, including heating and measuring a change in electric heating power of one logic element selected as a heat source, measuring a voltage change of a temperature-sensitive parameter of another logic element selected as a temperature sensor, determining thermal resistance as a ratio of voltage change temperature-sensitive parameter to changes in electric heating power and a known temperature a voltage coefficient of the temperature-sensitive parameter, characterized in that the heating is carried out by passing current through the pn junction of a logic element selected as a heat source, formed by a highly doped p + region, electrically connected to the output of the microcircuit and n substrate of p-MOS transistors, electrically connected to the bus terminal the power of the microcircuit, measure the voltage change of the temperature-sensitive parameter at the pn junction of the logic element selected as the temp sensor a circuit formed by a heavily doped n + region, electrically connected to the output of the microcircuit, and a p-pocket of n-MOS transistors, electrically connected to the output of the common power bus of the microcircuit, and the output of the power bus of the microcircuit is electrically connected to the output of the common power bus of the microcircuit, and as a temperature-sensitive voltage of the parameter, a direct voltage drop at the pn junction during the flow of the direct measuring current is selected, and the change in the electric heating power is determined as the product of the passing heating current through the p-n transition to a voltage drop across it.

2. The method according to claim 1, characterized in that the heating is carried out by passing current through the pn junction of a logic element selected as a heat source, formed by a highly doped n + region, electrically connected to the output of the microcircuit and a p-pocket of n-MOS transistors, electrically connected with the output of the common power bus of the microcircuit, the voltage change of the temperature-sensitive parameter is measured at the pn junction of the logic element selected as the temperature sensor formed by the heavily doped p + region, electrically connected to the output of the microcircuit and n substrate of p-MOS transistors, electrically connected to the output of the power bus of the microcircuit.