JP2000131379A - Method and device for measuring thermal resistance of electronic component - Google Patents

Method and device for measuring thermal resistance of electronic component

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Publication number
JP2000131379A
JP2000131379A JP10307587A JP30758798A JP2000131379A JP 2000131379 A JP2000131379 A JP 2000131379A JP 10307587 A JP10307587 A JP 10307587A JP 30758798 A JP30758798 A JP 30758798A JP 2000131379 A JP2000131379 A JP 2000131379A
Authority
JP
Japan
Prior art keywords
thermal resistance
electronic component
measuring
temperature
power consumption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10307587A
Other languages
Japanese (ja)
Inventor
Toshiki Nakamura
敏樹 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ando Electric Co Ltd
Original Assignee
Ando Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ando Electric Co Ltd filed Critical Ando Electric Co Ltd
Priority to JP10307587A priority Critical patent/JP2000131379A/en
Publication of JP2000131379A publication Critical patent/JP2000131379A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a device and method for measuring the thermal resistance of electronic components capable of measuring the thermal resistance of electronic components themselves such as ICs. SOLUTION: In a method for measuring the thermal resistance of an IC 1, a current load circuit which produces heat and consumes electric power with the passage of a current at the time of the impression of a voltage is internally provided. As changing the consumption of electric power in the current load circuit by connecting a voltage line 2 to the current load circuit and changing a predetermined voltage to be impressed by the voltage source 2, the temperature of a chip in the IC 1 is measured. Power consumption in the current load circuit at the time when the predetermined voltage is the first value is designated by W1, and a junction temperature at this time is designated by T1. Next, the predetermined voltage is raised to the second value different from the first value. The consumption of electric power at this time is designated by W2, and the junction temperature at this time is designated by T2. The value of the thermal resistance at this time is designated by (T2-T1)/(W2-W1).

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子部品の熱抵抗
の測定方法およびこの測定方法を実現する測定システム
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring the thermal resistance of an electronic component and a measuring system for realizing the method.

【0002】[0002]

【従来の技術】IC(Integrated Circuit)等の電子部
品において、駆動時の発熱による温度上昇を極力抑える
ことは、重要な課題である。発熱に対して電子部品の温
度上昇の程度を表す数値として熱抵抗(℃/W)があ
り、この熱抵抗の値が小さいほど放熱しやすく、電子部
品として好ましいと言える。
2. Description of the Related Art In electronic parts such as ICs (Integrated Circuits), it is an important task to minimize temperature rise due to heat generation during driving. Thermal resistance (° C./W) is a numerical value indicating the degree of temperature rise of the electronic component with respect to heat generation. The smaller the value of the thermal resistance is, the more easily heat is radiated, and it can be said that the electronic component is preferable.

【0003】しかし、従来の電子部品の検査では、熱抵
抗の値そのものではなく、熱抵抗に関連した熱特性を測
定することによって、熱抵抗の代替検査としていた。こ
の熱特性の測定は図3に示すような方法で行われてい
た。図3において、1はIC、3は電流計、5は放熱
器、6は水冷パイプである。IC1の上に放熱器5が接
着された状態で取り付けられていて、この放熱器5の内
部を水冷パイプ6が挿通している。水冷パイプ6には、
冷却水が流れている。一方、IC1の内部に形成されて
いる回路(図示せず)にTj端子7が設けられている。
熱特性の測定時、水冷パイプ6に冷却水を流しながら、
前記Tj端子7と電流計3を接続した状態で、IC1を
試験的に動作させる。Tj端子7からは、ジャンクショ
ン温度に比例した電流が電流計3に対して出力されるの
で、電流計3が示す値を、換算することによって、IC
1駆動時のジャンクション温度を求め、熱抵抗の代替値
として、評価に用いていた。
However, in the conventional inspection of electronic parts, instead of the value of the thermal resistance itself, a thermal characteristic related to the thermal resistance is measured, thereby performing an alternative inspection of the thermal resistance. The measurement of the thermal characteristics was performed by a method as shown in FIG. In FIG. 3, 1 is an IC, 3 is an ammeter, 5 is a radiator, and 6 is a water-cooled pipe. A radiator 5 is attached to the IC 1 in a bonded state, and a water cooling pipe 6 is inserted through the radiator 5. In the water cooling pipe 6,
Cooling water is flowing. On the other hand, a Tj terminal 7 is provided in a circuit (not shown) formed inside the IC 1.
When measuring the thermal characteristics, while flowing cooling water through the water cooling pipe 6,
With the Tj terminal 7 and the ammeter 3 connected, the IC 1 is operated experimentally. Since a current proportional to the junction temperature is output to the ammeter 3 from the Tj terminal 7, the value indicated by the ammeter 3 is converted to obtain an IC.
The junction temperature during one drive was determined and used as an alternative value of the thermal resistance for evaluation.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上記に
説明した図3の測定方法では、単にIC1の駆動時のジ
ャンクション温度を測定しているに過ぎず、一定の消費
電力あたり何度温度が上昇するかという熱抵抗の代替と
しては、不十分なものであった。また、上記測定方法
は、放熱器5を介して、IC1の駆動時に発生する熱を
逃がしながらの測定であった。放熱器5が存在する状態
での測定は、実用上必要ではあるが、IC1そのものの
熱特性の検査ではなかった。
However, the above-described measuring method of FIG. 3 merely measures the junction temperature when the IC 1 is driven, and increases the temperature several times for a certain power consumption. It was insufficient as a substitute for such thermal resistance. Further, the above-described measurement method is a measurement while radiating heat generated when the IC 1 is driven through the radiator 5. The measurement in the presence of the radiator 5 is necessary for practical use, but is not an inspection of the thermal characteristics of the IC 1 itself.

【0005】本発明は、上記課題に鑑み、IC等の電子
部品そのものの熱抵抗を測定できる、電子部品の熱抵抗
の測定方法と測定システムを提供することを目的とす
る。
In view of the above problems, an object of the present invention is to provide a method and a system for measuring the thermal resistance of an electronic component, which can measure the thermal resistance of the electronic component itself such as an IC.

【0006】[0006]

【課題を解決するための手段】以上の課題を解決すべ
く、請求項1に記載の発明は、電圧が印加されると電流
が流れて発熱し、電力を消費する発熱回路が内部に設け
られている、電子部品の熱抵抗の測定方法であって、前
記発熱回路における消費電力の大きさを連続的に変えな
がら、電子部品の内部のチップの温度を測定し、消費電
力と前記チップの温度の関係から、熱抵抗を求めること
を特徴とする。
In order to solve the above problems, according to the first aspect of the present invention, when a voltage is applied, a current flows to generate heat, and a heat generating circuit for consuming power is provided inside. A method of measuring the thermal resistance of an electronic component, wherein the temperature of a chip inside the electronic component is measured while continuously changing the magnitude of power consumption in the heating circuit, and the power consumption and the temperature of the chip are measured. The characteristic is to determine the thermal resistance from the relationship

【0007】請求項1に記載の発明においては、電子部
品内部に発熱回路を設け、発熱回路における消費電力の
大きさを連続的に変えながら、電子部品の内部のチップ
の温度を測定し、消費電力と前記チップの温度の関係か
ら、電子部品の熱抵抗を求める。つまり、電子部品内に
おいて強制的に発熱させ、そのときの消費電力の大きさ
を変えるという、従来にはない、新しい方法で、電子部
品の単独の熱抵抗を知ることができる。たとえば、消費
電力の値がある値から段階的に大きくなれば、その分発
熱も多くなり、電子部品の温度は上昇する。このとき、
消費電力の増加分に対応する温度上昇が求められ、結果
的に、1ワット消費電力が増加する分に応じた温度の上
昇分をほぼ求めることができ、すなわち、1種の熱抵抗
(℃/W)を求めることができるのである。
According to the first aspect of the present invention, a heat generating circuit is provided inside the electronic component, and the temperature of the chip inside the electronic component is measured while continuously changing the magnitude of power consumption in the heat generating circuit. The thermal resistance of the electronic component is determined from the relationship between the power and the temperature of the chip. In other words, the heat resistance of the electronic component can be known by a new method, which has not been used in the past, in which heat is forcibly generated in the electronic component and the magnitude of power consumption at that time is changed. For example, when the value of the power consumption gradually increases from a certain value, the heat generation also increases, and the temperature of the electronic component increases. At this time,
A temperature rise corresponding to the increase in power consumption is obtained, and as a result, a temperature rise corresponding to the increase in power consumption by 1 watt can be substantially obtained, that is, one kind of thermal resistance (° C. / W) can be obtained.

【0008】ここで、発熱回路は、電子部品が通常動作
を行うための駆動回路とは異なる回路であるが、この駆
動回路を一部利用するものであってもよい。消費電力を
連続的に変える方法としては、たとえば、印加する電圧
の大きさを変えたり、あるいは、抵抗を適宜除去したり
追加したりすることが挙げられる。また、熱抵抗を求め
る具体的な方法としては、たとえば、消費電力の大きさ
と、それに応じた電子部品の特定部分の温度との関係を
数点プロットし、得られたグラフの傾き、あるいは数学
的に処理して直線化したグラフの傾きを、熱抵抗とする
といったことが挙げられる。また、温度の測定方法は、
直接温度を測定してもよいし、温度に換算できる物理的
な値を測定する方法でもよい。
Here, the heat generating circuit is a circuit different from a drive circuit for performing normal operation of electronic components, but may use a part of this drive circuit. As a method of continuously changing the power consumption, for example, changing the magnitude of the applied voltage, or removing or adding a resistor as appropriate can be mentioned. Further, as a specific method of obtaining the thermal resistance, for example, the relationship between the magnitude of the power consumption and the temperature of a specific part of the electronic component corresponding thereto is plotted at several points, and the slope of the obtained graph or mathematical And the slope of the linearized graph is used as the thermal resistance. The method of measuring the temperature is
The temperature may be measured directly, or a method of measuring a physical value that can be converted into a temperature may be used.

【0009】請求項2に記載の発明は、請求項1に記載
の電子部品の熱抵抗の測定方法において、前記発熱回路
に外部の電圧源を接続して、前記電圧源によって印加す
る所定の電圧を変えることで、消費電力の大きさを変え
ることを特徴とする。
According to a second aspect of the present invention, in the method for measuring the thermal resistance of an electronic component according to the first aspect, an external voltage source is connected to the heating circuit and a predetermined voltage applied by the voltage source is used. The power consumption is changed by changing the power consumption.

【0010】請求項2に記載の発明によれば、外部の電
圧源によって発熱回路に印加する電圧を変えることで、
消費電力の大きさを変えることから、簡単な操作で、消
費電力を変えることができ、容易に電子部品単独の熱抵
抗を求めることができる。
According to the second aspect of the invention, by changing the voltage applied to the heating circuit by an external voltage source,
Since the power consumption is changed, the power consumption can be changed with a simple operation, and the thermal resistance of the electronic component alone can be easily obtained.

【0011】請求項3に記載の発明は、請求項2に記載
の電子部品の熱抵抗の測定方法において、前記所定の電
圧が第1の値であるときの前記発熱回路における消費電
力をW1とし、このとき測定された前記チップの温度を
T1とし、前記所定の電圧が第1の値とは異なる第2の
値であるときの前記発熱回路における消費電力をW2と
し、このとき測定された前記チップの温度をT2とし、
(T2−T1)/(W2−W1)をもって熱抵抗の値と
することを特徴とする。
According to a third aspect of the present invention, in the method for measuring a thermal resistance of an electronic component according to the second aspect, the power consumption in the heating circuit when the predetermined voltage is the first value is W1. The temperature of the chip measured at this time is defined as T1, and the power consumption in the heating circuit when the predetermined voltage is a second value different from the first value is defined as W2. Let T2 be the temperature of the chip,
(T2−T1) / (W2−W1) is defined as the value of the thermal resistance.

【0012】請求項3に記載の発明によれば、消費電力
W1、W2と、そのときの温度T1、T2について、消
費電力と温度を対応させて2点プロットすれば、その2
点間を結んだ直線の傾きをもって、熱抵抗の値としてい
る。このような2段階だけの測定であれば、迅速に熱抵
抗を求めることができる。
According to the third aspect of the present invention, if the power consumption W1 and W2 and the temperatures T1 and T2 at that time are plotted at two points in correspondence with the power consumption and the temperature, the two points are plotted.
The value of the thermal resistance is defined as the slope of a straight line connecting the points. With such two-stage measurement, the thermal resistance can be quickly obtained.

【0013】請求項4に記載の発明は、電圧が印加され
ると電流が流れて発熱し、電力を消費する発熱回路が内
部に形成されている、電子部品の熱抵抗を測定するため
の測定システムであって、前記発熱回路に接続されてい
る外部の電圧源と、電子部品の内部のチップの温度を測
定するための温度測定部とを備え、前記電圧源を操作し
て、前記発熱回路に印加する電圧を変えることができる
ことを特徴とする電子部品の熱抵抗の測定システムであ
る。
According to a fourth aspect of the present invention, there is provided a measurement method for measuring the thermal resistance of an electronic component, wherein a current flows when a voltage is applied to generate heat, and a heating circuit for consuming power is formed therein. A system, comprising: an external voltage source connected to the heating circuit; and a temperature measurement unit for measuring a temperature of a chip inside the electronic component, and operating the voltage source to generate the heating circuit. A system for measuring the thermal resistance of an electronic component, characterized in that a voltage applied to the electronic component can be changed.

【0014】請求項4に記載の発明によれば、電圧源に
よって電圧を印加することで電子部品の発熱回路を発熱
させ、この印加電圧を変えることで発熱回路の消費電力
を変更しながら、温度測定部によって電子部品の内部の
チップの温度を測定できるので、請求項1〜3の電子部
品の熱抵抗の測定方法を好適に実現できる。
According to the fourth aspect of the present invention, the voltage is applied by the voltage source to generate heat in the heat generating circuit of the electronic component, and by changing the applied voltage, the power consumption of the heat generating circuit is changed while the temperature is changed. Since the temperature of the chip inside the electronic component can be measured by the measuring unit, the method for measuring the thermal resistance of the electronic component according to claims 1 to 3 can be suitably realized.

【0015】[0015]

【発明の実施の形態】以下、図面に基づいて本発明を詳
細に説明する。図1は、本発明の実施の形態の一例を示
したもので、図3と同じ部材については、同じ符号を付
している。図1に示す熱抵抗の測定システム10は、主
に電圧源2、電流計3、出力端子4などから構成され
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. FIG. 1 shows an example of an embodiment of the present invention, and the same members as those in FIG. 3 are denoted by the same reference numerals. The thermal resistance measurement system 10 shown in FIG. 1 mainly includes a voltage source 2, an ammeter 3, an output terminal 4, and the like.

【0016】IC1(半導体素子)には、図示しない電
流負荷回路が形成されていて、この電流負荷回路は電圧
が印加されると電流に変換し(V−I変換)、出力端子
4から電流を出力するようになっている。この際、発熱
しながら電力を消費するので、この電流負荷回路が本発
明における発熱回路となっている。また、この回路はI
C1の駆動回路とは別の回路であるが、駆動回路中の一
部を含んでいてもよい。
A current load circuit (not shown) is formed in the IC 1 (semiconductor element). When a voltage is applied, the current load circuit converts the voltage into a current (VI conversion). Output. At this time, since power is consumed while generating heat, this current load circuit is the heat generating circuit in the present invention. Also, this circuit is I
Although it is a circuit different from the drive circuit of C1, it may include a part of the drive circuit.

【0017】電圧源2は、IC1の前記電流負荷回路に
接続されていて、この電流負荷回路に対して電圧を印加
するものである。電圧値は、手動等で変更可能になって
いる。
The voltage source 2 is connected to the current load circuit of the IC 1 and applies a voltage to the current load circuit. The voltage value can be changed manually or the like.

【0018】電圧源2から電圧が印加されると、前記電
流負荷回路は、前述のように、発熱しながら、電流を出
力端子4より出力する。したがって、電圧源2から電圧
がかけられている際のIC1は、通常動作時とは異なっ
て、強制的に発熱し温度が上昇する状態にある。このと
きの消費電力は、電圧源2の電圧値が一定であれば一定
であり、電圧値が変更になれば、消費電力も変化する。
When a voltage is applied from the voltage source 2, the current load circuit outputs a current from the output terminal 4 while generating heat as described above. Therefore, unlike the normal operation, the IC 1 when the voltage is applied from the voltage source 2 is in a state in which the IC 1 forcibly generates heat and the temperature rises. The power consumption at this time is constant if the voltage value of the voltage source 2 is constant, and if the voltage value changes, the power consumption also changes.

【0019】半導体素子であるIC1には、図3同様
に、外部と接続可能な、Tj端子7が設けられている。
前記Tj端子7と電流計3(温度測定部)を接続し、T
j端子7からは、ジャンクション温度に比例した電流が
電流計3に対して出力されるので、電流計3が示す値を
換算することによって、ジャンクション温度が求められ
るようになっている。
The IC1, which is a semiconductor element, is provided with a Tj terminal 7, which can be connected to the outside, as in FIG.
The Tj terminal 7 is connected to the ammeter 3 (temperature measurement unit),
Since a current proportional to the junction temperature is output from the j terminal 7 to the ammeter 3, the junction temperature is obtained by converting the value indicated by the ammeter 3.

【0020】次に、上記測定システム10によるIC1
の熱抵抗の測定方法を説明する。まず、電圧源2をある
値に設定して、IC1内の前記電流負荷回路に所定の電
圧を印加する。電流負荷回路でV−I変換され、出力端
子4に一定の電流が出力される。これによって、この電
流負荷回路で電力が消費され、ジャンクション温度があ
る温度まで上がる。Tj端子7から電流計3に対してジ
ャンクション温度に応じた電流が流れ、この電流値を読
み取り、換算することで、ジャンクション温度が求めら
れる。このときの消費電力W1とジャンクション温度T
1の関係を図2のA点にプロットする。
Next, the IC 1 by the measurement system 10
The method for measuring the thermal resistance of the sample will be described. First, the voltage source 2 is set to a certain value, and a predetermined voltage is applied to the current load circuit in the IC 1. VI conversion is performed by the current load circuit, and a constant current is output to the output terminal 4. As a result, power is consumed in the current load circuit, and the junction temperature rises to a certain temperature. A current corresponding to the junction temperature flows from the Tj terminal 7 to the ammeter 3, and the current value is read and converted to determine the junction temperature. At this time, the power consumption W1 and the junction temperature T
The relationship of 1 is plotted at point A in FIG.

【0021】次に、電圧源2の電圧値を上げて、電流負
荷回路に対して、より高い電圧をかける。これによっ
て、電流負荷回路内の消費電力の値は高くなり、ジャン
クション温度も上昇する。ある程度一定の温度になった
ときの電流計3の電流値を読み取り、温度に換算し、ジ
ャンクション温度を求める。このときの消費電力W2と
ジャンクション温度T2の関係を図2のB点にプロット
する。
Next, the voltage value of the voltage source 2 is increased, and a higher voltage is applied to the current load circuit. As a result, the value of power consumption in the current load circuit increases, and the junction temperature also increases. The current value of the ammeter 3 when the temperature reaches a certain level is read and converted into a temperature to obtain a junction temperature. The relationship between the power consumption W2 and the junction temperature T2 at this time is plotted at point B in FIG.

【0022】そして、図2のA点とB点を結んだ直線の
傾きは、消費電力の増加分に対してのジャンクション部
の温度の上昇の程度を示していて、本発明においては、
この傾きを、熱抵抗として求める。すなわち、熱抵抗
(℃/W)=(T2−T1)/(W2−W1)である。
The slope of the straight line connecting the points A and B in FIG. 2 indicates the degree of increase in the temperature of the junction with respect to the increase in the power consumption.
This slope is obtained as thermal resistance. That is, thermal resistance (° C./W)=(T2−T1)/(W2−W1).

【0023】以上の本発明の測定システム10およびそ
れによるICの熱抵抗の測定方法によれば、IC1内の
電流負荷回路において強制的に発熱させ、そのときの消
費電力の大きさを変えながら温度を測定するという、従
来にはない、全く新しい方法で、IC1そのものの熱抵
抗を知ることができる。つまり、消費電力をW1、W2
というように2段階変えて、そのときの温度、T1、T
2との関係から、1ワット消費電力が増加する分に応じ
た温度の上昇分を求めることができ、結果的に、1種の
熱抵抗(℃/W)を、迅速に、かつ、簡便に求めること
ができる。
According to the measurement system 10 of the present invention and the method for measuring the thermal resistance of an IC according to the present invention, heat is forcibly generated in the current load circuit in the IC 1 and the temperature is changed while changing the amount of power consumption at that time. The thermal resistance of the IC 1 itself can be known by a completely new method of measuring the IC1. That is, the power consumption is W1, W2
Temperature, T1, T
From the relationship with 2, it is possible to obtain an increase in temperature according to an increase in power consumption by 1 watt. You can ask.

【0024】また、IC1内で、強制的に発熱している
ことから、従来のように通常の動作をさせながらジャン
クション温度を測定する場合よりも、短時間のうちに、
ある程度一定の温度まで上昇するので、短時間に熱抵抗
を測定することができる。
Further, since heat is forcibly generated in the IC 1, it takes less time than a conventional case where the junction temperature is measured while performing a normal operation.
Since the temperature rises to a certain level, the thermal resistance can be measured in a short time.

【0025】なお、本発明は上記実施の形態に限定され
るものではなく、たとえば、上記実施の形態では、図3
に示したような放熱器は用いなかったが、放熱器・水冷
パイプ等の放熱装置を具備し、熱抵抗の値を測定するよ
うに構成してもよい。
The present invention is not limited to the above embodiment. For example, in the above embodiment, FIG.
Although the radiator shown in (1) was not used, a radiator such as a radiator and a water-cooled pipe may be provided to measure the value of the thermal resistance.

【0026】[0026]

【発明の効果】請求項1に記載の発明によれば、電子部
品内において強制的に発熱させ、そのときの消費電力の
大きさを変えるという、従来にはない、新しい方法で、
電子部品の単独の熱抵抗を知ることができる。たとえ
ば、消費電力の値がある値から段階的に大きくなれば、
その分発熱も多くなり、電子部品の温度は上昇する。こ
のとき、消費電力の増加分に対応する温度上昇が求めら
れ、結果的に、1ワット消費電力が増加する分に応じた
温度の上昇分をほぼ求めることができ、すなわち、1種
の熱抵抗(℃/W)を求めることができる。
According to the first aspect of the present invention, an unprecedented new method of forcibly generating heat in an electronic component and changing the amount of power consumption at that time is provided.
The independent thermal resistance of the electronic component can be known. For example, if the power consumption value gradually increases from a certain value,
The amount of heat generated increases accordingly, and the temperature of the electronic component rises. At this time, a temperature rise corresponding to an increase in power consumption is obtained, and as a result, a temperature increase corresponding to an increase in power consumption by 1 watt can be substantially obtained, that is, one kind of thermal resistance (° C./W).

【0027】請求項2に記載の発明によれば、請求項1
の発明の効果に加えて、外部の電圧源によって発熱回路
に印加する電圧を変えることで、消費電力の大きさを変
えることから、簡単な操作で、消費電力を変えることが
でき、容易に電子部品単独の熱抵抗を求めることができ
る。
According to the invention described in claim 2, according to claim 1
In addition to the effects of the invention, the power consumption is changed by changing the voltage applied to the heating circuit by an external voltage source, so that the power consumption can be changed with a simple operation, and the electronic power can be easily changed. The thermal resistance of the part alone can be determined.

【0028】請求項3に記載の発明によれば、請求項2
の発明の効果に加えて、迅速に熱抵抗を求めることがで
きる。
According to the invention described in claim 3, according to claim 2
In addition to the effects of the invention, the thermal resistance can be quickly obtained.

【0029】請求項4に記載の発明によれば、請求項1
〜3の電子部品の熱抵抗の測定方法を好適に実現でき
る。
According to the invention described in claim 4, according to claim 1 of the present invention,
The method for measuring the thermal resistance of the electronic components of (1) to (3) can be suitably realized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の電子部品の熱抵抗の測定方法および測
定システムを示す図である。
FIG. 1 is a diagram showing a method and system for measuring the thermal resistance of an electronic component according to the present invention.

【図2】図1の測定システムを用いてICの熱抵抗の測
定を行った際の、熱抵抗の求め方を説明するための図で
ある。
FIG. 2 is a diagram for explaining how to determine the thermal resistance when measuring the thermal resistance of an IC using the measurement system of FIG. 1;

【図3】従来の電子部品の熱特性の測定方法を示す図で
ある。
FIG. 3 is a diagram illustrating a conventional method for measuring the thermal characteristics of an electronic component.

【符号の説明】[Explanation of symbols]

1 IC(電子部品) 2 電圧源 3 電流計 4 出力端子 7 Tj端子 10 測定システム DESCRIPTION OF SYMBOLS 1 IC (electronic component) 2 Voltage source 3 Ammeter 4 Output terminal 7 Tj terminal 10 Measurement system

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 電圧が印加されると電流が流れて発熱
し、電力を消費する発熱回路が内部に設けられている、
電子部品の熱抵抗の測定方法であって、 前記発熱回路における消費電力の大きさを連続的に変え
ながら、電子部品の内部のチップの温度を測定し、消費
電力と前記チップの温度の関係から、熱抵抗を求めるこ
とを特徴とする電子部品の熱抵抗の測定方法。
1. A heating circuit, which generates heat when a voltage is applied and generates power by consuming power, is provided therein.
A method for measuring the thermal resistance of an electronic component, wherein the temperature of a chip inside an electronic component is measured while continuously changing the magnitude of power consumption in the heating circuit, and the relationship between power consumption and the temperature of the chip is determined. And measuring the thermal resistance of the electronic component.
【請求項2】 前記発熱回路に外部の電圧源を接続し
て、前記電圧源によって印加する所定の電圧を変えるこ
とで、消費電力の大きさを変えることを特徴とする請求
項1に記載の電子部品の熱抵抗の測定方法。
2. The power consumption according to claim 1, wherein an external voltage source is connected to the heat generating circuit, and the magnitude of power consumption is changed by changing a predetermined voltage applied by the voltage source. A method for measuring the thermal resistance of electronic components.
【請求項3】 前記所定の電圧が第1の値であるときの
前記発熱回路における消費電力をW1とし、このとき測
定された前記チップの温度をT1とし、 前記所定の電圧が第1の値とは異なる第2の値であると
きの前記発熱回路における消費電力をW2とし、このと
き測定された前記チップの温度をT2とし、 (T2−T1)/(W2−W1)をもって熱抵抗の値と
することを特徴とする請求項2に記載の電子部品の熱抵
抗の測定方法。
3. The power consumption in the heating circuit when the predetermined voltage is a first value is W1, the temperature of the chip measured at this time is T1, and the predetermined voltage is a first value. The power consumption in the heat generating circuit when the second value is different from the above is W2, the temperature of the chip measured at this time is T2, and the value of the thermal resistance is represented by (T2−T1) / (W2−W1). The method for measuring the thermal resistance of an electronic component according to claim 2, wherein:
【請求項4】 電圧が印加されると電流が流れて発熱
し、電力を消費する発熱回路が内部に形成されている、
電子部品の熱抵抗を測定するための測定システムであっ
て、 前記発熱回路に接続されている外部の電圧源と、 電子部品の内部のチップの温度を測定するための温度測
定部とを備え、 前記電圧源を操作して、前記発熱回路に印加する電圧を
変えることができることを特徴とする電子部品の熱抵抗
の測定システム。
4. When a voltage is applied, a current flows to generate heat, and a heat generating circuit consuming power is formed therein.
A measurement system for measuring the thermal resistance of an electronic component, comprising: an external voltage source connected to the heating circuit; and a temperature measurement unit for measuring a temperature of a chip inside the electronic component, A system for measuring the thermal resistance of an electronic component, wherein a voltage applied to the heating circuit can be changed by operating the voltage source.
JP10307587A 1998-10-28 1998-10-28 Method and device for measuring thermal resistance of electronic component Pending JP2000131379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10307587A JP2000131379A (en) 1998-10-28 1998-10-28 Method and device for measuring thermal resistance of electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10307587A JP2000131379A (en) 1998-10-28 1998-10-28 Method and device for measuring thermal resistance of electronic component

Publications (1)

Publication Number Publication Date
JP2000131379A true JP2000131379A (en) 2000-05-12

Family

ID=17970870

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1102056A1 (en) * 1999-06-02 2001-05-23 The Tokyo Electric Power Co., Inc. Thermal proof strength determination method of power-transmission line
CN102129023A (en) * 2011-01-24 2011-07-20 北京工业大学 Method for measuring heat conduction parameter in thin layer material of active area of semiconductor device
RU2490657C2 (en) * 2011-10-28 2013-08-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" Method for determination of heat-transfer resistance for digital integrated circuits
CN106199366A (en) * 2016-06-25 2016-12-07 北京工业大学 A kind of method of power MOS (Metal Oxide Semiconductor) device temperature measurement on-line
CN106872898A (en) * 2017-02-06 2017-06-20 中国第汽车股份有限公司 Electrokinetic cell monomer interface thermal resistance method for rapidly testing

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1102056A1 (en) * 1999-06-02 2001-05-23 The Tokyo Electric Power Co., Inc. Thermal proof strength determination method of power-transmission line
EP1102056A4 (en) * 1999-06-02 2005-06-15 Tokyo Electric Power Co Thermal proof strength determination method of power-transmission line
CN102129023A (en) * 2011-01-24 2011-07-20 北京工业大学 Method for measuring heat conduction parameter in thin layer material of active area of semiconductor device
RU2490657C2 (en) * 2011-10-28 2013-08-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" Method for determination of heat-transfer resistance for digital integrated circuits
CN106199366A (en) * 2016-06-25 2016-12-07 北京工业大学 A kind of method of power MOS (Metal Oxide Semiconductor) device temperature measurement on-line
CN106872898A (en) * 2017-02-06 2017-06-20 中国第汽车股份有限公司 Electrokinetic cell monomer interface thermal resistance method for rapidly testing

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