RU2008139466A - METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR MANUFACTURING EPITAXIAL PLATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND EPITAXIAL PLATE - Google Patents

Abstract

 1. A method of manufacturing a GaN-th substrate (10, 31) having a c-plane for the manufacture of an epitaxial plate (20, 30) by successively growing at least two layers on the said c-plane, including AlxGa layer (21, 34) (1-x) N with composition x by Al is greater than zero and not more than 0.3 and thicker than zero and not more than 30 nm and a (22, 35) GaN layer, which includes the stages:! accepting the value of t1, found from the following expression 1, as the minimum thickness of the mentioned GaN th substrate (10, 31):! (1.5 · 1011 · t13 + 1.2 · 1011 · t23) · {1 / (1.5 · 1011 · t1) + 1 / (1.2 · 1011 · t2)} / {15.96 · x · (1-a2 / a1)} · (t1 + t2) + (t1 · t2) / {5.32 · x · (1-a2 / a1)} - (r2 + h2) / 2h = 0 (expression 1 ),! provided that t1 (m) denotes the thickness of the GaN-th substrate (10, 31), r (m) is the radius of the GaN-th substrate (10, 31), t2 (m) is the thickness of the mentioned layer (21, 34 ) AlxGa (1-x) N, x is the Al composition in the mentioned layer (21, 34) AlxGa (1-x) N, h (m) is the deflection of the mentioned epitaxial plate (20, 30), a1 is the GaN lattice constant , and a2 is the lattice constant of AlN; and! cutting said GaN th substrate (10, 31) with a thickness at least equal to said minimum thickness and less than 400 μm from a GaN ingot. ! 2. A method of manufacturing a GaN-th substrate (10, 31) according to claim 1, in which at the said stage of cutting said GaN-th substrate, said GaN-th substrate (10, 31) is formed with a thickness at least equal to said minimum thickness and a component of at least 100 microns and less than 250 microns. ! 3. A method of manufacturing an epitaxial plate (20, 30), comprising the steps of:! the manufacture of the GaN-th substrate (10, 31) by the method of manufacturing the GaN-th substrate (10, 31) according to claim 1; ! the formation of a layer (21, 34) of AlxGa (1-x) N on said c-plane of said GaN th substrate (10, 31); and! formation of a (22, 35) GaN layer on said AlxGa (1-x) N layer (21, 34). ! 4. A method of manufacturing a semiconductor device (

Claims (5)

1. A method of manufacturing a GaN-th substrate (10, 31) having a c-plane for the manufacture of an epitaxial plate (20, 30) by successively growing at least two layers on the said c-plane, including Al layer (21, 34) _x Ga _(1-x) N with composition x by Al is greater than zero and not more than 0.3 and thicker than zero and not more than 30 nm and a (22, 35) GaN layer, which includes the stages: the adoption of the value of t1, found from the following expression 1, as the minimum thickness of the mentioned GaN-th substrate (10, 31): (1.5 · 10 ¹¹ · t1 ³ + 1.2 · 10 ¹¹ · t2 ³ ) · {1 / (1.5 · 10 ¹¹ · t1) + 1 / (1.2 · 10 ¹¹ · t2)} / {15.96 · x · (1-a2 / a1)} · (t1 + t2) + (t1 · t2) / {5.32 · x · (1-a2 / a1)} - (r ² + h ² ) / 2h = 0 (expression 1), provided that t1 (m) denotes the thickness of the GaN-th substrate (10, 31), r (m) is the radius of the GaN-th substrate (10, 31), t2 (m) is the thickness of the mentioned layer (21, 34 ) Al _x Ga _(1-x) N, x is the Al composition in the mentioned layer (21, 34) Al _x Ga _(1-x) N, h (m) is the deflection of the mentioned epitaxial plate (20, 30), a1 is the GaN lattice constant, and a2 is the AlN lattice constant; and cutting said GaN th substrate (10, 31) with a thickness at least equal to said minimum thickness and less than 400 μm from a GaN ingot. 2. A method of manufacturing a GaN-th substrate (10, 31) according to claim 1, in which at the said stage of cutting said GaN-th substrate, said GaN-th substrate (10, 31) is formed with a thickness at least equal to said minimum thickness and a component of at least 100 microns and less than 250 microns. 3. A method of manufacturing an epitaxial plate (20, 30), comprising the steps of: the manufacture of the GaN-th substrate (10, 31) by the method of manufacturing the GaN-th substrate (10, 31) according to claim 1; forming a layer (21, 34) Al _x Ga _(1-x) N on said c-plane of said GaN th substrate (10, 31); and formation of a (22, 35) GaN layer on said Al _x Ga _(1-x) N layer (21, 34 ₎ N. 4. A method of manufacturing a semiconductor device (40), comprising the steps of: manufacturing an epitaxial plate (20, 30) by a method for manufacturing an epitaxial plate (20, 30) according to claim 3; and the formation of an electrode (41, 42) on said epitaxial plate (20, 30). 5. An epitaxial plate including a GaN substrate (10, 31), an Al _x Ga _(1-x) N layer (21, 34) formed on the c-plane of the GaN substrate (10, 31), and a GaN layer (22, 35) formed on said Al _x Ga _(1-x) N layer (21, 34), wherein the thickness of the aforementioned GaN th substrate (10, 31) is less than 250 μm, and the deflection of the mentioned epitaxial plate (20, 30) is not more than 100 μm.