RU2008132276A - METHOD FOR GROWING REFINING MONOCRYSTALS - Google Patents

METHOD FOR GROWING REFINING MONOCRYSTALS Download PDF

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Publication number
RU2008132276A
RU2008132276A RU2008132276/15A RU2008132276A RU2008132276A RU 2008132276 A RU2008132276 A RU 2008132276A RU 2008132276/15 A RU2008132276/15 A RU 2008132276/15A RU 2008132276 A RU2008132276 A RU 2008132276A RU 2008132276 A RU2008132276 A RU 2008132276A
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RU
Russia
Prior art keywords
single crystal
speed
carried out
growing
annealing
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RU2008132276/15A
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Russian (ru)
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RU2404298C2 (en
Inventor
Евгений Андреевич Гарибин (RU)
Евгений Андреевич Гарибин
Алексей Александрович Демиденко (RU)
Алексей Александрович Демиденко
Игорь Алексеевич Миронов (RU)
Игорь Алексеевич Миронов
Сергей Николаевич Соловьев (RU)
Сергей Николаевич Соловьев
Original Assignee
Закрытое акционерное общество (ЗАО) "ИНКРОМ" (RU)
Закрытое акционерное общество (ЗАО) "ИНКРОМ"
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Priority to RU2008132276/05A priority Critical patent/RU2404298C2/en
Publication of RU2008132276A publication Critical patent/RU2008132276A/en
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Publication of RU2404298C2 publication Critical patent/RU2404298C2/en

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Abstract

Способ выращивания тугоплавких монокристаллов, включающий вакуумную плавку исходной шихты, внесение затравки, кристаллизацию расплава до образования монокристалла максимально возможного размера из данного объема расплава и последующий отжиг выращенного монокристалла, отличающийся тем, что отжиг проводят при снижении температуры до 1200°С со скоростью 10-15°С/ч, а последующее охлаждение монокристалла проводят со скоростью 60°С/ч.A method of growing refractory single crystals, including vacuum melting the initial charge, seeding, crystallization of the melt to form a single crystal of the largest possible size from a given melt volume and subsequent annealing of the grown single crystal, characterized in that the annealing is carried out at a temperature drop of 1200 ° C at a speed of 10-15 ° C / h, and subsequent cooling of the single crystal is carried out at a speed of 60 ° C / h.

Claims (1)

Способ выращивания тугоплавких монокристаллов, включающий вакуумную плавку исходной шихты, внесение затравки, кристаллизацию расплава до образования монокристалла максимально возможного размера из данного объема расплава и последующий отжиг выращенного монокристалла, отличающийся тем, что отжиг проводят при снижении температуры до 1200°С со скоростью 10-15°С/ч, а последующее охлаждение монокристалла проводят со скоростью 60°С/ч. A method of growing refractory single crystals, including vacuum melting the initial charge, seeding, crystallization of the melt to form a single crystal of the largest possible size from a given melt volume and subsequent annealing of the grown single crystal, characterized in that the annealing is carried out at a temperature drop of 1200 ° C at a speed of 10-15 ° C / h, and subsequent cooling of the single crystal is carried out at a speed of 60 ° C / h.
RU2008132276/05A 2008-07-31 2008-07-31 Method of growing heat resistant monocrystals RU2404298C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2008132276/05A RU2404298C2 (en) 2008-07-31 2008-07-31 Method of growing heat resistant monocrystals

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RU2008132276/05A RU2404298C2 (en) 2008-07-31 2008-07-31 Method of growing heat resistant monocrystals

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RU2008132276A true RU2008132276A (en) 2010-02-10
RU2404298C2 RU2404298C2 (en) 2010-11-20

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RU2404298C2 (en) 2010-11-20

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20110801

NF4A Reinstatement of patent

Effective date: 20120920

MM4A The patent is invalid due to non-payment of fees

Effective date: 20140801