RU2008132276A - METHOD FOR GROWING REFINING MONOCRYSTALS - Google Patents
METHOD FOR GROWING REFINING MONOCRYSTALS Download PDFInfo
- Publication number
- RU2008132276A RU2008132276A RU2008132276/15A RU2008132276A RU2008132276A RU 2008132276 A RU2008132276 A RU 2008132276A RU 2008132276/15 A RU2008132276/15 A RU 2008132276/15A RU 2008132276 A RU2008132276 A RU 2008132276A RU 2008132276 A RU2008132276 A RU 2008132276A
- Authority
- RU
- Russia
- Prior art keywords
- single crystal
- speed
- carried out
- growing
- annealing
- Prior art date
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Способ выращивания тугоплавких монокристаллов, включающий вакуумную плавку исходной шихты, внесение затравки, кристаллизацию расплава до образования монокристалла максимально возможного размера из данного объема расплава и последующий отжиг выращенного монокристалла, отличающийся тем, что отжиг проводят при снижении температуры до 1200°С со скоростью 10-15°С/ч, а последующее охлаждение монокристалла проводят со скоростью 60°С/ч.A method of growing refractory single crystals, including vacuum melting the initial charge, seeding, crystallization of the melt to form a single crystal of the largest possible size from a given melt volume and subsequent annealing of the grown single crystal, characterized in that the annealing is carried out at a temperature drop of 1200 ° C at a speed of 10-15 ° C / h, and subsequent cooling of the single crystal is carried out at a speed of 60 ° C / h.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2008132276/05A RU2404298C2 (en) | 2008-07-31 | 2008-07-31 | Method of growing heat resistant monocrystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2008132276/05A RU2404298C2 (en) | 2008-07-31 | 2008-07-31 | Method of growing heat resistant monocrystals |
Publications (2)
Publication Number | Publication Date |
---|---|
RU2008132276A true RU2008132276A (en) | 2010-02-10 |
RU2404298C2 RU2404298C2 (en) | 2010-11-20 |
Family
ID=42123523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2008132276/05A RU2404298C2 (en) | 2008-07-31 | 2008-07-31 | Method of growing heat resistant monocrystals |
Country Status (1)
Country | Link |
---|---|
RU (1) | RU2404298C2 (en) |
-
2008
- 2008-07-31 RU RU2008132276/05A patent/RU2404298C2/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
RU2404298C2 (en) | 2010-11-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2045372A3 (en) | Method for growing silicon ingot | |
CN102168303A (en) | Method for preparing crystallization rate of monocrystal silicon 110 | |
WO2011072278A3 (en) | Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same | |
RU2008132276A (en) | METHOD FOR GROWING REFINING MONOCRYSTALS | |
CN101781791A (en) | Method for removing impurities in single crystal rod straight pulling process | |
CN103696001A (en) | Crystal growth control method in polycrystalline silicon ingot casting | |
JP2015107898A5 (en) | ||
RU2011143444A (en) | METHOD FOR GROWING SILVER AND THALLIUM HALOGENID CRYSTALS | |
RU2007110192A (en) | METHOD FOR GROWING SINGLE CRYSTALS | |
WO2010053586A3 (en) | Systems, methods and substrates of monocrystalline germanium crystal growth | |
RU2006144067A (en) | GROWING SAPPHIRE SINGLE CRYSTALS USING TECHNICAL QUALITY ORGANIZING MATERIAL | |
WO2009017201A1 (en) | PROCESS FOR PRODUCING Si BULK POLYCRYSTAL INGOT | |
UA131037U (en) | METHOD OF AG7SiS5I GROWING BY MELTED DRIED CRYSTALIZATION METHOD | |
UA111911U (en) | METHOD OF OBTAINING MONO CRYSTALS Ag0,5Pb1,75GeS4 | |
RU2005136894A (en) | METHOD FOR GROWING DIAMOND MONOCRYSTALS | |
UA122889C2 (en) | THE METHOD OF GROWING ACTIVATED MULTICOMPONENT SINGLE CRYSTALS BY THE METHOD OF HORIZONTAL DIRECTED CRYSTALLIZATION | |
UA101298C2 (en) | method for completing the single crystal growth | |
UA114854U (en) | METHOD OF AG7GeS5I GROWING BY THE MELTED DRIED CRYSTALIZATION METHOD | |
UA116748C2 (en) | METHOD OF GROWING SOLID SOLUTIONS OF THE COMPOSITION (Cu1-xAgx) GeS5I BY THE METHOD OF DIRECTED CRYSTALIZATION | |
PL397640A1 (en) | Gallium-containing method for preparing a semiconductor single crystal | |
UA143457U (en) | DEVICE FOR GROWING ORIENTED SINGLE CRYSTALS BY THE METHOD OF VERTICAL DIRECTED CRYSTALLIZATION | |
RU2011130590A (en) | METHOD FOR GROWING LITHIUM-MAGNESIUM MOLYBDATE SINGLE CRYSTALS | |
UA115226U (en) | METHOD OF OBTAINING Tl10Hg3Cl16 MONO CRYSTALS | |
UA128639U (en) | METHOD OF OBTAINING CdTe, CdxZn1-xTe, CdxMn1-xTe CRISTAL MONO CRYSTALS BY VERTICAL BRIDGE METHOD | |
UA99900C2 (en) | Method for growing BiNbO4 crystals |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20110801 |
|
NF4A | Reinstatement of patent |
Effective date: 20120920 |
|
MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20140801 |