UA128639U - METHOD OF OBTAINING CdTe, CdxZn1-xTe, CdxMn1-xTe CRISTAL MONO CRYSTALS BY VERTICAL BRIDGE METHOD - Google Patents
METHOD OF OBTAINING CdTe, CdxZn1-xTe, CdxMn1-xTe CRISTAL MONO CRYSTALS BY VERTICAL BRIDGE METHODInfo
- Publication number
- UA128639U UA128639U UAU201804736U UAU201804736U UA128639U UA 128639 U UA128639 U UA 128639U UA U201804736 U UAU201804736 U UA U201804736U UA U201804736 U UAU201804736 U UA U201804736U UA 128639 U UA128639 U UA 128639U
- Authority
- UA
- Ukraine
- Prior art keywords
- xte
- cdxmn1
- cdxzn1
- cristal
- ampoule
- Prior art date
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Спосіб одержання монокристалів CdTe, CdхZn1-хTe та CdхMn1-хTe (діаметром до 60 мм) вертикальним методом Бріджмена включає синтез відповідної сполуки, кристалізацію отриманого полікристалічного матеріалу в графітизованій ампулі з подвійними стінками та охолодження до кімнатної температури. Синтезований полікристалічний матеріал додатково завантажують у простір між внутрішньою і зовнішньою стінками ампули з плоским дном, до центру дна якої ззовні приварено кварцовий світловод, другий кінець якого знаходиться при кімнатній температурі. Кристалізацію здійснюють зі швидкістю 2-3 мм/год., після завершення якої ампулу охолоджують зі швидкістю 20-30 K/год.A method for producing CdTe, CdxZn1-xTe and CdxMn1-xTe (up to 60 mm in diameter) single crystals by Bridgman's vertical method involves synthesis of the corresponding compound, crystallization of the obtained polycrystalline material in a double walled graphitized ampoule, and cooling to room temperature. The synthesized polycrystalline material is further loaded into the space between the inner and outer walls of the flat bottom ampoule, to which a quartz fiber is welded to the center of the bottom, the other end of which is at room temperature. Crystallization is carried out at a rate of 2-3 mm / h, after which the ampoule is cooled at a rate of 20-30 K / h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| UAU201804736U UA128639U (en) | 2018-04-27 | 2018-04-27 | METHOD OF OBTAINING CdTe, CdxZn1-xTe, CdxMn1-xTe CRISTAL MONO CRYSTALS BY VERTICAL BRIDGE METHOD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| UAU201804736U UA128639U (en) | 2018-04-27 | 2018-04-27 | METHOD OF OBTAINING CdTe, CdxZn1-xTe, CdxMn1-xTe CRISTAL MONO CRYSTALS BY VERTICAL BRIDGE METHOD |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| UA128639U true UA128639U (en) | 2018-09-25 |
Family
ID=63709592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| UAU201804736U UA128639U (en) | 2018-04-27 | 2018-04-27 | METHOD OF OBTAINING CdTe, CdxZn1-xTe, CdxMn1-xTe CRISTAL MONO CRYSTALS BY VERTICAL BRIDGE METHOD |
Country Status (1)
| Country | Link |
|---|---|
| UA (1) | UA128639U (en) |
-
2018
- 2018-04-27 UA UAU201804736U patent/UA128639U/en unknown
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