RU2000116757A - METHOD FOR GETTERING TREATMENT OF SEMICONDUCTOR PLATES - Google Patents

METHOD FOR GETTERING TREATMENT OF SEMICONDUCTOR PLATES

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Publication number
RU2000116757A
RU2000116757A RU2000116757/28A RU2000116757A RU2000116757A RU 2000116757 A RU2000116757 A RU 2000116757A RU 2000116757/28 A RU2000116757/28 A RU 2000116757/28A RU 2000116757 A RU2000116757 A RU 2000116757A RU 2000116757 A RU2000116757 A RU 2000116757A
Authority
RU
Russia
Prior art keywords
film
semiconductor plates
gettering treatment
refractive index
processing
Prior art date
Application number
RU2000116757/28A
Other languages
Russian (ru)
Inventor
Владимир Дмитриевич Скупов
Валентин Константинович Смолин
Original Assignee
Научно-исследовательский институт измерительных систем
Filing date
Publication date
Application filed by Научно-исследовательский институт измерительных систем filed Critical Научно-исследовательский институт измерительных систем
Publication of RU2000116757A publication Critical patent/RU2000116757A/en

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Claims (1)

Способ геттерирующей обработки полупроводниковых пластин, включающий нанесение на рабочую сторону пластин пленки моноокиси германия толщиной 1,0-2,5 мкм, отжиг сформированной структуры в течение 3-5 ч при температуре из интервала 700-800 К и удаление пленки, отличающийся тем, что после осаждения пленки измеряют ее показатель преломления и обрабатывают структуру ультразвуком в химически неактивной жидкости на частоте из интервала 20-40 кГц, чередуя обработку с измерениями показателя преломления, и прекращают обработка при достижении показателем преломления постоянного значения, после чего структуру отжигают и удаляют пленку ионно-плазменным травлением.The method of getter treatment of semiconductor wafers, including applying to the working side of the wafers a film of germanium monoxide 1.0–2.5 μm thick, annealing the formed structure for 3-5 h at a temperature from 700-800 K, and removing the film, characterized in that after deposition of the film, its refractive index is measured and the structure is sonicated in a chemically inactive liquid at a frequency from the interval of 20-40 kHz, alternating processing with measurements of the refractive index, and processing is stopped when the index is reached m of refraction of a constant value, after which the structure is annealed and the film is removed by ion-plasma etching.
RU2000116757/28A 2000-06-23 METHOD FOR GETTERING TREATMENT OF SEMICONDUCTOR PLATES RU2000116757A (en)

Publications (1)

Publication Number Publication Date
RU2000116757A true RU2000116757A (en) 2002-04-27

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2655507C1 (en) * 2017-05-22 2018-05-28 Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр "Красноярский научный центр Сибирского отделения Российской академии наук" (ФИЦ КНЦ СО РАН, КНЦ СО РАН) METHOD FOR OBTAINING FILMS WITH Mn5Ge3OX FERROMAGNETIC CLUSTERS ON THE SUBSTRATE IN THE GeO2 MATRIX

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2655507C1 (en) * 2017-05-22 2018-05-28 Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр "Красноярский научный центр Сибирского отделения Российской академии наук" (ФИЦ КНЦ СО РАН, КНЦ СО РАН) METHOD FOR OBTAINING FILMS WITH Mn5Ge3OX FERROMAGNETIC CLUSTERS ON THE SUBSTRATE IN THE GeO2 MATRIX

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