TW201534956A - Component with reflection preventing function and manufacturing method thereof - Google Patents

Component with reflection preventing function and manufacturing method thereof Download PDF

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TW201534956A
TW201534956A TW103141593A TW103141593A TW201534956A TW 201534956 A TW201534956 A TW 201534956A TW 103141593 A TW103141593 A TW 103141593A TW 103141593 A TW103141593 A TW 103141593A TW 201534956 A TW201534956 A TW 201534956A
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substrate
film
aluminum oxide
fine
forming
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TW103141593A
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TWI632392B (en
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Shohei Senba
Hidehito Sueki
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Tokyo Electron Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/118Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56After-treatment
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/12Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation

Abstract

Disclosed is to provide a component with an antireflection function and a manufacturing method thereof capable of obtaining an antireflection structure of a uniform micros asperities by uniformly forming a thin aluminum oxide film on a substrate. A component (10) with an antireflection function includes: a substrate (11) and an antireflection film (13) formed on a surface of the substrate (11). The antireflection film (13) is formed with a micro asperity structure by subjecting an aluminum oxide film, which is formed by atomic layer deposition, to a hydrothermal treatment using either high-temperature hot water or water vapor.

Description

具有反射防止功能之構件及其製造方法 Member with reflection preventing function and manufacturing method thereof

本發明係關於具有反射防止功能之構件及其製造方法。 The present invention relates to a member having a reflection preventing function and a method of manufacturing the same.

透鏡、平面顯示器(FPD)基板、半導體基板等要求反射防止構造。就以反射防止構造而言,所知的有藉由在基材之表面形成微細之凹凸構造,使折射率不會產生急遽變化之所謂的蛾眼構造。就以在如此之表面形成微細凹凸構造而形成反射防止構造之方法而言,提案有在基材上形成氧化鋁膜等之後,進行浸漬在沸點以下之熱水的水熱處理(例如,專利文獻1、2)。 A reflection preventing structure is required for a lens, a flat panel display (FPD) substrate, a semiconductor substrate, or the like. In the anti-reflection structure, a so-called moth-eye structure in which the refractive index does not change rapidly is formed by forming a fine concavo-convex structure on the surface of the substrate. In the method of forming an anti-reflection structure by forming a fine concavo-convex structure on such a surface, a hydrothermal treatment of immersing hot water having a boiling point or lower after forming an aluminum oxide film or the like on a substrate is proposed (for example, Patent Document 1) ,2).

就以此時之氧化鋁膜之形成方法而言,在專利文獻1揭示有溶膠凝膠法,在專利文獻2揭示有化學蒸鍍法(CVD法)或物理蒸鍍法(PVD法)。 In the method of forming an aluminum oxide film at this time, Patent Document 1 discloses a sol-gel method, and Patent Document 2 discloses a chemical vapor deposition method (CVD method) or a physical vapor deposition method (PVD method).

〔先行技術文獻〕 [prior technical literature] 〔專利文獻〕 [Patent Document]

[專利文獻1]日本特開2010-72046號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-72046

[專利文獻2]日本特開2012-198330號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2012-198330

然而,作為光學構件,除了反射防止功能外,也需要高透光功能,即是不損害透過之光的透過率的功能,因所形成之氧化鋁膜之厚度越厚,越使得透過率由於光之吸收而下降,故必須盡可能地將氧化鋁膜設為薄膜(100nm以下)。但是,在如FPD基板般之大型基板之時,在溶膠凝膠法或CVD法、PVD法中,難以均勻形成100nm以下之薄膜。 However, as an optical member, in addition to the reflection preventing function, a high light transmission function is required, that is, a function of not impairing the transmittance of transmitted light, and the thicker the thickness of the formed aluminum oxide film, the higher the transmittance is due to light. Since it absorbs and falls, it is necessary to make an aluminum oxide film into a film (100 nm or less) as much as possible. However, in the case of a large substrate such as an FPD substrate, it is difficult to uniformly form a film of 100 nm or less in the sol-gel method, the CVD method, or the PVD method.

另外,於在折射率大之基材例如矽晶圓形成如專利文獻1、2所記載般之反射防止構造之時,氧化鋁之折射率為1.6,對此矽之折射率為3.8,也產生該些折射率差大,難謂具有充分反射防止效果的情形。 In addition, when a reflection preventing structure as described in Patent Documents 1 and 2 is formed on a substrate having a large refractive index such as a ruthenium wafer, the refractive index of alumina is 1.6, and the refractive index of yttrium is 3.8. These refractive index differences are large, and it is difficult to say that there is a sufficient reflection preventing effect.

本發明係鑒於如此之情形而創作出,其課題係以提供在基材上均勻形成薄的氧化鋁膜而可以取得均勻之微細凹凸狀之反射防止構造的具有反射防止功能之構件及其製造方法。 The present invention has been conceived in view of the above-mentioned circumstances, and has been provided to provide a member having an antireflection function capable of uniformly forming a thin aluminum oxide film on a substrate to obtain a uniform fine concavo-convex shape, and a method for producing the same. .

再者,係以提供即使對折射率大之基材亦可以取得充分之反射防止功能的具有反射防止功能之構件及其製造方法為課題。 Further, it is an object to provide a member having an antireflection function and a method for producing the same, which can provide a sufficient reflection preventing function even for a substrate having a large refractive index.

為了解決上述課題,本發明之第1觀點係提供一種具有反射防止功能之構件,係具備基材,和被形成在上述基材之表面的反射防止膜的具有反射防止功能之構件,其特徵在於:上述反射防止膜係藉由以高溫之熱水或水蒸氣對利用原子層堆積法所形成之氧化鋁膜進行水熱處理,形成微細凹凸構造。 In order to solve the above problems, a first aspect of the present invention provides a member having a reflection preventing function, comprising: a substrate; and a member having an antireflection function of an antireflection film formed on a surface of the substrate, wherein The anti-reflection film is hydrothermally treated with a high-temperature hot water or water vapor to form an aluminum oxide film formed by an atomic layer deposition method to form a fine concavo-convex structure.

在上述第1觀點中,上述具有反射防止功能之構件係可以當作光學構件或裝置形成用或者平面顯示器用之基板使用。再者,上述氧化鋁膜可以藉由交互供給三甲基鋁和氧化劑而形成。 In the above first aspect, the member having the reflection preventing function can be used as an optical member or a device for forming a substrate or a substrate for a flat display. Further, the above aluminum oxide film can be formed by alternately supplying trimethylaluminum and an oxidizing agent.

本發明之第2觀點中,提供一種具有反射防止功能之構件的製造方法,其特徵在於具有:在基材之表面藉由原子層堆積法形成氧化鋁膜之工程;和藉由高溫之熱水或水蒸氣對上述氧化鋁膜施予水熱處理而形成微細凹凸構造,使成為反射防止膜之工程。 According to a second aspect of the present invention, a method for producing a member having a reflection preventing function, comprising: a process of forming an aluminum oxide film by an atomic layer deposition method on a surface of a substrate; and a hot water by a high temperature Or the water vapor is subjected to a hydrothermal treatment on the above-mentioned aluminum oxide film to form a fine concavo-convex structure, and the anti-reflection film is formed.

在上述第2觀點中,上述氧化鋁膜可以藉由交互供給三甲基鋁和氧化劑而形成。 In the above second aspect, the aluminum oxide film can be formed by alternately supplying trimethylaluminum and an oxidizing agent.

在本發明之第3觀點中,提供一種具有反射防止功能之構件,其係在基材之表面形成具有反射防止功能之微細凹凸部而形成的具有反射防止功能之構件,其特徵在於:上述微細凹凸部係在上述基材之表面形成氧化鋁膜,接著對氧化鋁膜進行水熱處理而形成微細凹凸狀氧化鋁,之後,藉由將上述微細凹凸狀氧化鋁當作蝕刻遮罩而對上述基材之表面進行乾蝕刻,並且除去上述微細凹凸狀 氧化鋁而形成。 According to a third aspect of the present invention, there is provided a member having a reflection preventing function, wherein a member having an anti-reflection function formed by forming a fine uneven portion having a reflection preventing function on a surface of a substrate is characterized in that: In the uneven portion, an aluminum oxide film is formed on the surface of the base material, and then the aluminum oxide film is hydrothermally treated to form fine irregular aluminum oxide, and then the fine uneven aluminum oxide is used as an etching mask. Dry etching on the surface of the material, and removing the above-mentioned fine irregularities Formed by alumina.

在上述第3觀點中,於形成上述微細凹凸部之時所使用之氧化鋁膜以原子層堆積法形成為佳。再者,具有反射防止功能之構件可以當作光學構件或裝置形成用或者平面顯示器用之基板使用。 In the above third aspect, it is preferable that the aluminum oxide film used in forming the fine uneven portion is formed by an atomic layer deposition method. Further, the member having the reflection preventing function can be used as an optical member or a device for forming a substrate or a substrate for a flat display.

本發明之第4觀點中,提供一種具有反射防止功能之構件的製造方法,其特徵在於具有:在基材之表面形成氧化鋁膜之工程;藉由高溫之熱水或水蒸氣對上述氧化鋁膜施予水熱處理而形成微細凹凸狀氧化鋁之工程;及將上述微細凹凸狀氧化鋁當作蝕刻遮罩而對上述基材之表面進行乾蝕刻而在上述基材之表面形成微細凹凸部,並且除去上述微細凹凸狀氧化鋁,並形成反射防止構造之工程。 According to a fourth aspect of the present invention, there is provided a method for producing a member having an antireflection function, comprising: forming an aluminum oxide film on a surface of a substrate; and the above alumina by hot water or steam at a high temperature a film is subjected to hydrothermal treatment to form fine irregular aluminum oxide; and the fine irregular aluminum oxide is used as an etching mask to dry-etch the surface of the substrate to form fine irregularities on the surface of the substrate. Further, the above-mentioned fine irregular aluminum oxide is removed, and an anti-reflection structure is formed.

在上述第4觀點中,形成上述氧化鋁膜之工程係藉由原子層堆積法而執行為佳。 In the above fourth aspect, the process of forming the above-mentioned aluminum oxide film is preferably performed by an atomic layer deposition method.

本發明之第5觀點中,提供一種具有反射防止功能之構件,係在基材之表面形成具有反射防止功能之微細凹凸部而構成的具有反射防止功能之構件,其特徵在於:上述微細凹凸部係藉由在上述基材之表面形成具有基板之折射率之附近的折射率,較基材更容易被蝕刻之易蝕刻性膜,在上述易蝕刻性膜之表面形成氧化鋁膜,接著對氧化鋁膜進行水熱處理而形成微細凹凸狀氧化鋁,之後將上述微細凹凸狀氧化鋁當作蝕刻遮罩而對上述易蝕刻性膜之表面進行乾蝕刻,並且除去上述微細凹凸狀氧化鋁而形 成。 According to a fifth aspect of the present invention, there is provided a member having an antireflection function, wherein a member having an antireflection function is formed on a surface of a substrate and having a fine uneven portion having a reflection preventing function, wherein the fine concavo-convex portion By forming an etchable film having a refractive index in the vicinity of the refractive index of the substrate on the surface of the substrate, which is more easily etched than the substrate, an aluminum oxide film is formed on the surface of the etchable film, followed by oxidation The aluminum film is hydrothermally treated to form fine asperity-like alumina, and then the fine irregular aluminum oxide is used as an etching mask to dry-etch the surface of the easily etchable film, and the fine uneven aluminum oxide is removed. to make.

本發明之第6觀點中,提供一種具有反射防止功能之構件的製造方法,其特徵在於具有:在基材之表面形成具有基板之折射率之附近的折射率,且較基材更容易被蝕刻之易蝕刻性膜之工程;在上述易蝕刻性膜之表面形成氧化鋁膜之工程;藉由高溫之熱水或水蒸氣對上述氧化鋁膜施予水熱處理而形成微細凹凸狀氧化鋁之工程;及將上述微細凹凸狀氧化鋁當作蝕刻遮罩而對上述易蝕刻性膜之表面進行乾蝕刻而在上述易蝕刻性膜之表面形成微細凹凸部,並且除去上述微細凹凸狀氧化鋁,形成反射防止構造之工程。 According to a sixth aspect of the present invention, there is provided a method for producing a member having a reflection preventing function, comprising: forming a refractive index in the vicinity of a refractive index of a substrate on a surface of a substrate, and being more easily etched than a substrate; Engineering of an easily etchable film; engineering of forming an aluminum oxide film on the surface of the above-mentioned easily etchable film; engineering of forming a fine irregular aluminum oxide by hydrothermal treatment of the above-mentioned aluminum oxide film by hot water or steam at a high temperature And the surface of the easy-etchable film is dry-etched by using the fine concavo-convex alumina as an etching mask, and fine irregularities are formed on the surface of the easy-etchable film, and the fine uneven aluminum oxide is removed to form The project of reflection prevention construction.

在上述第5及第6觀點中,於形成上述微細凹凸部之時所使用之氧化鋁膜以原子層堆積法形成為佳。再者,上述第5及第6觀點適合於上述基材為玻璃基板、透明導電膜或彩色濾光器般之難蝕刻性基板之時。 In the fifth and sixth aspects, it is preferable that the aluminum oxide film used in forming the fine uneven portion is formed by an atomic layer deposition method. Further, the fifth and sixth aspects are suitable when the substrate is a glass substrate, a transparent conductive film, or a color filter-like opaque substrate.

若藉由本發明之第1及第2觀點時,對基材,在其表面形成氧化鋁膜之後,進行水熱處理而形成微細凹凸構造,依此在形成反射防止膜之時,因藉由原子層堆積法形成氧化鋁膜,故即使在大型基板之時,亦可以在基材全體上均勻地形成薄的氧化鋁膜,並不會使高透光功能受損,可以在基材之表面全體均勻地形成構成微細凹凸狀之反射防止膜。 According to the first and second aspects of the present invention, the base material is formed into an aluminum oxide film on the surface thereof, and then subjected to hydrothermal treatment to form a fine concavo-convex structure, whereby the anti-reflection film is formed by the atomic layer. Since the aluminum oxide film is formed by the deposition method, even when it is a large substrate, a thin aluminum oxide film can be uniformly formed on the entire substrate, and the high light transmission function is not impaired, and the entire surface of the substrate can be uniformly formed. An anti-reflection film constituting a fine uneven shape is formed in the ground.

若藉由本發明之第3及第4觀點時,因將於在基材之表面形成氧化鋁膜之後進行水熱處理而所形成之微細凹凸狀氧化鋁當作蝕刻遮罩,而對基材表面施予乾蝕刻而在基材表面形成微細凹凸部,並且除去微細凹凸狀氧化鋁,形成反射防止構造,故即使為折射率高之基材,亦不會產生因折射率差所造成的反射,可以取得充分之反射防止功能。 According to the third and fourth aspects of the present invention, the fine concavo-convex alumina formed by hydrothermal treatment after forming an aluminum oxide film on the surface of the substrate is used as an etching mask, and the surface of the substrate is dried. By forming a fine uneven portion on the surface of the substrate by etching and removing the fine uneven aluminum oxide to form an antireflection structure, even if the substrate having a high refractive index does not cause reflection due to the difference in refractive index, sufficient Reflection prevention function.

若藉由本發明之第5及第6觀點時,因在基材之表面形成具有基板之折射率之附近的折射率,且較基材更容易被蝕刻之易蝕刻性膜之後,將形成氧化鋁膜之後進行水熱處理而所形成的微細凹凸狀氧化鋁當作蝕刻遮罩,對易蝕刻性膜表面施予乾蝕刻而在基材表面形成微細凹凸部,並且除去微細凹凸狀氧化鋁,形成反射防止構造,故即使為折射率高且難蝕刻性之基材,亦不會產生因折射率差所造成的反射,可以取得充分之反射防止功能。 According to the fifth and sixth aspects of the present invention, alumina is formed by forming an easily etchable film having a refractive index in the vicinity of the refractive index of the substrate on the surface of the substrate and being more easily etched than the substrate. The fine concavo-convex alumina formed by hydrothermal treatment is used as an etching mask, and the surface of the easily etchable film is dry-etched to form fine concavo-convex portions on the surface of the substrate, and the fine concavo-convex alumina is removed to form an anti-reflection structure. Therefore, even if the substrate has a high refractive index and is difficult to etch, reflection due to the difference in refractive index does not occur, and a sufficient reflection preventing function can be obtained.

10、20‧‧‧具有反射防止功能之構件 10, 20‧‧‧ Components with reflection prevention

11、21‧‧‧基材 11, 21‧‧‧ substrate

13‧‧‧反射防止膜 13‧‧‧Anti-reflection film

14‧‧‧Al2O314‧‧‧Al 2 O 3 film

15‧‧‧凸部 15‧‧‧ convex

16‧‧‧凹部 16‧‧‧ recess

22‧‧‧微細凹凸部 22‧‧‧Micro-concave parts

23‧‧‧Al2O323‧‧‧Al 2 O 3 film

24‧‧‧微細凹凸狀Al2O3 24‧‧‧Micro-concave Al 2 O 3

圖1為表示與本發明之第1實施型態有關之具有反射防止功能之構件的剖面圖。 Fig. 1 is a cross-sectional view showing a member having an antireflection function according to a first embodiment of the present invention.

圖2為用以說明與本發明之第1實施型態有關之具有反射防止功能之構件的反射防止膜之形成方法的圖示。 FIG. 2 is a view for explaining a method of forming an anti-reflection film of a member having an antireflection function according to the first embodiment of the present invention.

圖3為表示與本發明之第2實施型態有關之具有反射防止功能之構件的剖面圖。 Fig. 3 is a cross-sectional view showing a member having an antireflection function according to a second embodiment of the present invention.

圖4為用以說明與本發明之第2實施型態有關之具有反射防止功能之構件的微細凹凸部之形成方法的圖示。 Fig. 4 is a view for explaining a method of forming a fine uneven portion of a member having an antireflection function according to a second embodiment of the present invention.

圖5為用以說明使在基材表面形成Al2O3膜,並將進行水熱處理而形成的微細凹凸狀之膜設為反射防止膜之時之表面部分的折射率變化之圖示。 FIG. 5 is a view for explaining a change in refractive index of a surface portion when an Al 2 O 3 film is formed on the surface of a substrate and a fine uneven film formed by hydrothermal treatment is used as an antireflection film.

圖6為用以說明本發明之第2實施型態中在基材表面形成微細凹凸部之時之表面部分之折射率變化的圖示。 Fig. 6 is a view for explaining a change in refractive index of a surface portion when a fine uneven portion is formed on a surface of a substrate in a second embodiment of the present invention.

圖7為表示與本發明之第3實施型態有關之具有反射防止功能之構件的剖面圖。 Fig. 7 is a cross-sectional view showing a member having a reflection preventing function according to a third embodiment of the present invention.

圖8為用以說明與本發明之第3實施型態有關之具有反射防止功能之構件的微細凹凸部之形成方法的圖示。 Fig. 8 is a view for explaining a method of forming a fine uneven portion of a member having an antireflection function according to a third embodiment of the present invention.

圖9為用以說明在基材表面形成易蝕刻性膜,並在其表面形成Al2O3膜之後,將進行水熱處理而所形成的微細凹凸狀之膜設為反射防止膜之時之表面部分的折射率變化之圖示。 FIG. 9 is a view showing a surface in which an easily etchable film is formed on the surface of the substrate, and a film having a fine unevenness formed by hydrothermal treatment is formed as an antireflection film after forming an Al 2 O 3 film on the surface thereof. A graphical representation of a partial change in refractive index.

圖10為用以說明本發明之第3實施型態中在易蝕刻性膜表面形成微細凹凸部之時之表面部分之折射率變化的圖示。 FIG. 10 is a view for explaining a change in refractive index of a surface portion when a fine uneven portion is formed on the surface of the etchable film in the third embodiment of the present invention.

以下參照附件圖面針對本發明之實施型態予以說明。 The embodiments of the present invention will be described below with reference to the attached drawings.

[第1實施型態] [First embodiment]

圖1為表示與本發明之第1實施型態有關之具有反射防止功能之構件的剖面圖。 Fig. 1 is a cross-sectional view showing a member having an antireflection function according to a first embodiment of the present invention.

與本實施型態有關之具有反射防止功能之構件10具有基材11,又具有被形成在基材11之表面的構成微細凹凸狀之蛾眼構造的反射防止膜13。構件10即使將其本身當作透鏡等之光學構件使用亦可,即使當作裝置形成用或FPD用之基板使用亦可。 The member 10 having the reflection preventing function according to the present embodiment has the substrate 11 and an anti-reflection film 13 which is formed on the surface of the substrate 11 and has a moth-eye structure having a fine uneven shape. The member 10 may be used as an optical member such as a lens, and may be used as a substrate for device formation or FPD.

基材11之材料並不特別限定,即使為玻璃、半導體、陶瓷、塑膠、金屬中之任一者亦可,以於當作裝置用基板使用之時使用矽,於當作FPD用之基板或透鏡使用之時使用玻璃為典型例。 The material of the substrate 11 is not particularly limited, and may be any of glass, semiconductor, ceramic, plastic, and metal. When used as a substrate for a device, it is used as a substrate for FPD or The use of glass when the lens is used is a typical example.

反射防止膜13係藉由原子層堆積法(ALD法)形成氧化鋁(Al2O3)膜之後,進行水熱處理而使Al2O3膜成為凹凸狀。 The anti-reflection film 13 is formed into an aluminum oxide (Al 2 O 3 ) film by an atomic layer deposition method (ALD method), and then subjected to hydrothermal treatment to form an Al 2 O 3 film into an uneven shape.

以下,參照圖2針對反射防止膜13之形成方法具體性說明。 Hereinafter, a method of forming the anti-reflection film 13 will be specifically described with reference to FIG. 2 .

如圖2(a)所示般,最初在基材11之表面藉由ALD法形成Al2O3膜14。 As shown in Fig. 2(a), the Al 2 O 3 film 14 is initially formed on the surface of the substrate 11 by an ALD method.

於以ALD法形成Al2O3膜14之時,藉由重覆進行複數次依序供給含Al氣體和氧化劑而形成由Al2O3所構成之薄單位膜之操作,即是交互供給含Al氣體和氧化劑,使成為特定膜厚之Al2O3膜。具體而言,在處理容器內收容基材,並將基材加熱至特定溫度,並且使處理容器內排氣至特定真空度,在其狀態下,將「含Al氣體之 供給→處理容器內之沖洗→氧化劑之供給→處理容器內之沖洗」當作用以單位膜形成之1循環而重覆複數次循環。 When the Al 2 O 3 film 14 is formed by the ALD method, the operation of forming the thin unit film composed of Al 2 O 3 by sequentially supplying the Al-containing gas and the oxidant in multiple steps is repeated. The Al gas and the oxidizing agent make the Al 2 O 3 film having a specific film thickness. Specifically, the substrate is housed in the processing container, and the substrate is heated to a specific temperature, and the inside of the processing container is evacuated to a specific degree of vacuum. In the state, "the supply of the Al-containing gas is included in the processing container. The rinsing→the supply of the oxidizing agent→the rinsing in the processing container was repeated as a cycle for one cycle of unit film formation.

含Al氣體並不特別限定,若為一般所使用者即可,例如例示有三甲基鋁(TMA):Al(CH3)3。作為氧化劑可以使用例如H2O、O3、O2電漿。 The Al-containing gas is not particularly limited, and may be a general user. For example, trimethylaluminum (TMA): Al(CH 3 ) 3 is exemplified. As the oxidizing agent, for example, H 2 O, O 3 , O 2 plasma can be used.

此時之Al2O3膜14之膜厚以藉由水熱處理取得期待之反射防止構造之厚度為佳。從如此之點來看以100nm以下為佳,以10~50nm為更佳。 In this case, the thickness of the Al 2 O 3 film 14 is preferably a thickness of a reflection preventing structure which is expected to be obtained by hydrothermal treatment. From this point of view, it is preferably 100 nm or less, and more preferably 10 to 50 nm.

接著,如圖2(b)所示般,對Al2O3膜14施予水熱處理,而在Al2O3膜14形成具有微細凸部15及凹部16之微細凹凸。依此,形成微細凹凸狀之反射防止膜13。 Next, as shown in FIG. 2(b), the Al 2 O 3 film 14 is hydrothermally treated, and fine irregularities having the fine convex portions 15 and the concave portions 16 are formed in the Al 2 O 3 film 14. Thereby, the anti-reflection film 13 having a fine uneven shape is formed.

水熱處理係可以藉由上述專利文獻1及2所揭示之方法而執行。具體而言,可以藉由浸漬於熱水或高溫之鹼水溶液之方法,或曝露於水蒸氣之方法等而進行。依此,形成較原Al2O3膜14之厚度深的凹凸。此時,不使所有的Al2O3膜14對熱水反應,而使Al2O3膜14之下層側以未反應的原樣殘留為佳。該係因為反應而成為微細凹凸狀化之部分與基材11之密接性下降,成為容易剝離,但是由於殘留未反應之Al2O3膜,可以抑制密接性下降之故。未反應之Al2O3膜之厚度以1~25nm為佳。熱水或高溫之鹼水溶液以60℃以上沸騰溫度以下為佳。對此的浸漬時間依Al2O3膜之膜厚不同而有所不同,但以1秒~30分鐘程度為佳,以10秒~10分鐘為更佳。暴露於水蒸 氣之時的處理時間以1分鐘~24小時為佳。 The hydrothermal treatment can be carried out by the methods disclosed in the above Patent Documents 1 and 2. Specifically, it can be carried out by a method of immersing in an aqueous solution of hot water or a high-temperature alkali, or a method of exposing it to water vapor. Thereby, irregularities deeper than the thickness of the original Al 2 O 3 film 14 are formed. At this time, it is preferable that all of the Al 2 O 3 film 14 does not react with hot water, and it is preferable that the lower layer side of the Al 2 O 3 film 14 remains as unreacted. In this case, the adhesion between the portion which is finely concavo-convex and the substrate 11 is lowered, and the adhesion is easily removed. However, since the unreacted Al 2 O 3 film remains, the adhesion can be suppressed from being lowered. The thickness of the unreacted Al 2 O 3 film is preferably from 1 to 25 nm. The aqueous solution of hot water or high-temperature alkali is preferably at a boiling temperature of 60 ° C or higher. The immersion time for this varies depending on the film thickness of the Al 2 O 3 film, but it is preferably from 1 second to 30 minutes, more preferably from 10 seconds to 10 minutes. The treatment time when exposed to water vapor is preferably from 1 minute to 24 hours.

藉由如此之水熱處理所形成之微細之凸部15及凹部16係以例如100nm程度之間隙所形成,可以設為較照射之光的波長短的間隙,因微細凹凸之形狀為針狀或紡錘狀,故折射率在深度方向連續性變化,能取得反射防止功能。 The fine convex portion 15 and the concave portion 16 formed by such hydrothermal treatment are formed by a gap of, for example, about 100 nm, and may be a gap shorter than the wavelength of the irradiated light, and the shape of the fine unevenness is a needle shape or a spindle. Since the refractive index changes continuously in the depth direction, the reflection preventing function can be obtained.

被形成在反射防止膜13之微細凹凸之深度(凸部之高度)為了取得良好之反射防止機能,以100~500nm為佳。 The depth (the height of the convex portion) formed in the fine concavities and convexities of the anti-reflection film 13 is preferably 100 to 500 nm in order to obtain a good reflection preventing function.

反射防止膜13具有良好之反射防止性,尤其用於透光構件之時,必須形成不會無效地使透過率惡化(光之吸收),且密接性不會下降。因此,Al2O3膜必須滿足上述條件。即是,為了滿足透過率,必須在100nm以下,更佳為25~50nm之範圍成膜,為了提高密接性,必須使未反應之Al2O3膜殘留1~25nm。但是,於大面積之基板時,必須在面內均勻地(以±5%以下為佳)形成如此之薄膜,再者,因未反應之Al2O3膜為如1~25nm般之極薄膜厚,故為了高精度控制此,成為基底之Al2O3膜之均勻性仍須極高。但是,以往提案之CVD法、PVD法中,無法均勻地形成如此之薄的膜厚。 The anti-reflection film 13 has excellent antireflection properties, and in particular, when it is used for a light-transmitting member, it is necessary to form a transmittance (light absorption) which does not ineffectively deteriorate, and the adhesion does not decrease. Therefore, the Al 2 O 3 film must satisfy the above conditions. In other words, in order to satisfy the transmittance, it is necessary to form a film in a range of 100 nm or less, more preferably 25 to 50 nm, and in order to improve the adhesion, it is necessary to leave the unreacted Al 2 O 3 film at 1 to 25 nm. However, in the case of a large-area substrate, it is necessary to form such a film uniformly in the plane (preferably ±5% or less), and further, since the unreacted Al 2 O 3 film is a film as a film of 1 to 25 nm. Since it is thick, in order to control this with high precision, the uniformity of the Al 2 O 3 film which becomes a base must still be extremely high. However, in the conventional CVD method and PVD method, such a thin film thickness cannot be uniformly formed.

對此,在本實施形態中,因使用ALD法形成Al2O3膜14,故可以以薄膜厚且均勻地形成Al2O3膜14。再者,因ALD法之階梯覆蓋性良好,故即使在基板上存在構造物之時,亦可以在基材11之全體均勻地形成Al2O3 膜14。即是,在ALD法中,因重覆複數次形成薄單位膜之操作,故可以薄且均勻地對基材以高階梯覆蓋性進行成膜,可以在基材11表面全體以薄且均勻地形成密接性良好的構成微細凹凸狀之反射防止膜13。 In contrast, in the present embodiment, because ALD method 2 O 3 film 14 is formed Al, it is possible to form a uniform film thickness and Al 2 O 3 film 14. Further, since the step coverage of the ALD method is good, the Al 2 O 3 film 14 can be uniformly formed on the entire substrate 11 even when a structure is present on the substrate. In other words, in the ALD method, since the operation of forming the thin unit film is repeated a plurality of times, the substrate can be formed thinly and uniformly with high step coverage, and the entire surface of the substrate 11 can be thin and uniform. The anti-reflection film 13 having fine unevenness is formed to have good adhesion.

再者,由於ALD法覆蓋性如此地良好,故不僅基材之上面,亦可對在其他方法無法充分成膜之基材之背面或側面進行成膜。 Further, since the coverage by the ALD method is so good, it is possible to form a film on the back surface or the side surface of the substrate which is not sufficiently formed by other methods, not only on the upper surface of the substrate.

[第2實施型態] [Second embodiment]

圖3為表示與本發明之第2實施型態有關之具有反射防止功能之構件的剖面圖。 Fig. 3 is a cross-sectional view showing a member having an antireflection function according to a second embodiment of the present invention.

與本實施形態有關之具有反射防止功能之構件20係在基材21之表面形成具有反射防止功能之蛾眼構造之微細凹凸部22。構件20即使將其本身當作透鏡等之光學構件使用亦可,即使當作裝置形成用或FPD用之基板使用亦可。 The member 20 having the reflection preventing function according to the present embodiment is formed with a fine uneven portion 22 having a moth-eye structure having an antireflection function on the surface of the substrate 21. The member 20 may be used as an optical member such as a lens, and may be used as a substrate for device formation or FPD.

基材21之材料並不特別限定,即使為玻璃、半導體、陶瓷、塑膠、金屬中之任一者亦可,以於當作裝置用基板使用之時使用矽,於當作FPD用之基板或透鏡使用之時使用玻璃為典型例。 The material of the substrate 21 is not particularly limited, and may be any of glass, semiconductor, ceramic, plastic, and metal, and may be used as a substrate for an apparatus for use as a substrate for an FPD or as a substrate for an FPD or The use of glass when the lens is used is a typical example.

微細凹凸部22係可以藉由在基材21表面形成Al2O3膜,接著進行水熱處理而使Al2O3膜成為微細凹凸狀Al2O3,將該微細凹凸狀Al2O3當作蝕刻遮罩使用而對基材21之表面進行乾蝕刻,轉印其微細凹凸,並且除 去微細凹凸狀Al2O3而形成。 The fine concavo-convex portion 22 can be formed by forming an Al 2 O 3 film on the surface of the substrate 21, followed by hydrothermal treatment to form the Al 2 O 3 film into fine concavo-convex Al 2 O 3 , and the fine concavo-convex Al 2 O 3 is The surface of the substrate 21 is dry-etched for use as an etching mask, and fine irregularities are transferred, and fine concavo-convex Al 2 O 3 is removed.

以下,參照圖4針對微細凹凸部22之形成方法具體說明。 Hereinafter, a method of forming the fine uneven portion 22 will be specifically described with reference to FIG. 4 .

如圖4(a)所示般,最初在基材21之表面形成Al2O3膜23。在本實施型態中,與第1實施型態不同,Al2O3膜23之形成方法並不限定於ALD法,例如即使使用CVD法或PVD法(濺鍍法或真空蒸鍍法)等之其他方法亦可。但是,從以良好之覆蓋性在基材21表面薄且均勻地形成Al2O3膜23之觀點來看,與第1實施型態相同,以使用ALD法為佳。 As shown in FIG. 4(a), an Al 2 O 3 film 23 is initially formed on the surface of the substrate 21. In the present embodiment, unlike the first embodiment, the method of forming the Al 2 O 3 film 23 is not limited to the ALD method, and for example, even if a CVD method or a PVD method (sputtering method or vacuum evaporation method) is used, etc. Other methods are also available. However, from the viewpoint of forming the Al 2 O 3 film 23 thinly and uniformly on the surface of the substrate 21 with good coverage, it is preferable to use the ALD method as in the first embodiment.

此時之Al2O3膜23之膜厚以藉由接著的水熱處理可以形成成為蝕刻遮罩之微細凹凸,並且可以形成期待之微細凹凸部22之厚度為佳。從如此之點來看Al2O3膜23之膜厚以3~50nm為佳。 At this time, the film thickness of the Al 2 O 3 film 23 can be formed into fine irregularities which are etching masks by the subsequent hydrothermal treatment, and the thickness of the desired fine uneven portion 22 can be preferably formed. From this point of view, the film thickness of the Al 2 O 3 film 23 is preferably 3 to 50 nm.

接著,如圖4(b)所示般,對Al2O3膜23施予水熱處理,而形成微細凹凸狀Al2O3 24。此時之水熱處理條件可以與第1實施型態進行相同。微細凹凸狀Al2O3 24被形成針狀或紡錘狀。 Next, as shown in FIG. 4(b), the Al 2 O 3 film 23 is subjected to a hydrothermal treatment to form fine concavo-convex Al 2 O 3 24 . The hydrothermal treatment conditions at this time can be made the same as in the first embodiment. The fine concavo-convex Al 2 O 3 24 is formed into a needle shape or a spindle shape.

微細凹凸狀Al2O3 24之凹凸之深度(凸部之高度)雖然可以因應欲取得之微細凹凸部22之深度等而適當設定,但是以10~300nm為佳。 The depth (the height of the convex portion) of the unevenness of the fine concavo-convex Al 2 O 3 24 can be appropriately set depending on the depth of the fine uneven portion 22 to be obtained, etc., but preferably 10 to 300 nm.

接著,如圖4(c)所示般,將微細凹凸狀Al2O3 24當作蝕刻遮罩而開始進行基材21表面之乾蝕刻。然後,如圖4(d)所示般,也一併蝕刻微細凹凸狀 Al2O3 24,形成期待深度之微細凹凸部22。即使由於微細凹凸部22之深度不同,另外蝕刻微細凹凸狀Al2O3 24亦可。 Next, as shown in FIG. 4(c), the fine concavo-convex Al 2 O 3 24 is used as an etching mask to start dry etching of the surface of the substrate 21. Then, as shown in FIG. 4(d), the fine concavo-convex Al 2 O 3 24 is also etched together to form the fine uneven portion 22 having a desired depth. Even if the depth of the fine uneven portion 22 is different, the fine uneven O 2 O 3 24 may be etched.

就以乾蝕刻而言,可以使用一般之電漿蝕刻。就以蝕刻氣體而言,以可以蝕刻基材21和微細凹凸狀Al2O3 24之雙方者為佳,若因應基材21之種類而適當選擇即可。例如,於基材21為矽之時,例示BCl3、Cl2,於基材21為玻璃之時,例示BCl3、CF4、O2In the case of dry etching, a general plasma etching can be used. In the case of the etching gas, it is preferable to etch both the substrate 21 and the fine concavo-convex Al 2 O 3 24, and it is preferable to appropriately select the substrate 21 depending on the type of the substrate 21. For example, when the substrate 21 is ruthenium, BCl 3 and Cl 2 are exemplified, and when the substrate 21 is glass, BCl 3 , CF 4 , and O 2 are exemplified.

微細凹凸部22之深度(凸部之高度)可藉由蝕刻時間、蝕刻氣體(種類、流量)、電漿條件(壓力、RF功率)、處理溫度等之製程條件或屬於蝕刻遮罩之微細凹凸狀Al2O3 24高度而調節。微細凹凸部22之深度(凸部之高度)若因應欲取得之反射防止功能而適當設定即可,以100~1000nm為佳。 The depth of the fine uneven portion 22 (the height of the convex portion) can be determined by etching time, etching gas (type, flow rate), plasma condition (pressure, RF power), processing temperature, or the like, or fine unevenness belonging to the etching mask. The Al 2 O 3 24 is adjusted in height. The depth of the fine uneven portion 22 (the height of the convex portion) may be appropriately set in accordance with the reflection preventing function to be obtained, and is preferably 100 to 1000 nm.

於上述專利文獻1、2所記載般,於在基材表面形成Al2O3膜,將進行水熱處理而所形成之微細凹凸狀之膜設為反射防止膜之時,當基材以如矽般之折射率大之材料所構成時,以Al2O3所構成之反射防止膜和基材之折射率差變大,在其界面產生反射。 In the case where the Al 2 O 3 film is formed on the surface of the substrate and the fine concavo-convex film formed by hydrothermal treatment is used as the antireflection film, the substrate is as described in the above-mentioned Patent Documents 1 and 2. When a material having a large refractive index is formed, the difference in refractive index between the antireflection film made of Al 2 O 3 and the substrate becomes large, and reflection occurs at the interface.

具體而言,如圖5所示般,在矽晶圓之表面形成以Al2O3所構成之微細凹凸狀之反射防止膜之時,到達至基材之前,因折射率n從空氣之n=1連續變化至Al2O3之n=1.6為止,故可以防止反射,但是因構成基材之矽為n=3.8,故折射率差大,在反射防止膜和基材之界 面的反射防止效果並不充分。為了解決該折射率差所產生之不良情形,上述專利文獻2記載有在基材和反射防止膜之間形成具有該些折射率之中間的折射率之光學調整膜,但是光學調整膜之形成較費工,再者無法消除光學調整膜和反射防止膜或基材之間的折射率差。 Specifically, as shown in FIG. 5, when an anti-reflection film having a fine uneven shape made of Al 2 O 3 is formed on the surface of the germanium wafer, the refractive index n is from the air before reaching the substrate. =1 continuous change to n=1.6 of Al 2 O 3 , so that reflection can be prevented, but since the crucible constituting the substrate is n=3.8, the refractive index difference is large, and reflection at the interface between the anti-reflection film and the substrate is prevented. The effect is not sufficient. In order to solve the problem caused by the difference in refractive index, Patent Document 2 discloses that an optical adjustment film having a refractive index in the middle of the refractive index is formed between the substrate and the anti-reflection film, but the optical adjustment film is formed. It is difficult to eliminate the difference in refractive index between the optical adjustment film and the anti-reflection film or the substrate.

對此,在本實施型態中,藉由將藉由水熱處理而所形成之微細凹凸狀Al2O3當作蝕刻遮罩而對基材進行乾蝕刻,如圖6所示般,因在基材轉印微細凹凸圖案,故如圖6所示般,可以從空氣之折射率n=1連續變化至基材之折射率例如矽之折射率n=3.8為止。因此,即使為折射率高之基材,也不會產生折射率差所造成之反射,可以取得充分之反射防止效果。 On the other hand, in the present embodiment, the substrate is subjected to dry etching by using the fine concavo-convex Al 2 O 3 formed by hydrothermal treatment as an etching mask, as shown in FIG. Since the substrate is transferred to the fine concavo-convex pattern, as shown in FIG. 6, it is possible to continuously change from the refractive index n=1 of air to the refractive index of the substrate, for example, the refractive index n of 矽. Therefore, even if the substrate has a high refractive index, reflection due to the difference in refractive index does not occur, and a sufficient antireflection effect can be obtained.

再者,就以在基材直接形成微細凹凸部之手法而言,以往存在有使用微珠,或使用電子線束之方法,但是當欲在大型基材形成微細凹凸時,則需花費較多時間。對此,在本實施型態中,因若在基材形成Al2O3膜後進行水熱處理而形成微細凹凸狀Al2O3,並將此當作蝕刻遮罩而進行乾蝕刻即可,故即使基材大型,亦可以在全面一次形成微細凹凸部,可在短時間形成。 In addition, in the conventional method of forming a fine uneven portion on a substrate, there has been a method of using microbeads or using an electron beam, but it takes a lot of time to form fine concavities and convexities on a large substrate. . On the other hand, in the present embodiment, when the Al 2 O 3 film is formed on the substrate, hydrothermal treatment is performed to form fine concavo-convex Al 2 O 3 , and this can be dry-etched as an etching mask. Therefore, even if the substrate is large, the fine uneven portion can be formed all at once, and it can be formed in a short time.

[第3實施型態] [Third embodiment]

圖7為表示與本發明之第3實施型態有關之具有反射防止功能之構件的剖面圖。 Fig. 7 is a cross-sectional view showing a member having a reflection preventing function according to a third embodiment of the present invention.

與本實施型態有關之具有反射防止功能之構 件30係在基材31之表面形成具有基材31之折射率之附近(以折射率差為0.1以下為佳)的折射率,較基材31更容易蝕刻之易蝕刻性膜32,並在易蝕刻性膜32之表面形成具有反射防止功能之蛾眼構造之微細凹凸部33而構成。 The structure with reflection prevention function related to this embodiment The member 30 is formed on the surface of the substrate 31 so as to have a refractive index in the vicinity of the refractive index of the substrate 31 (preferably having a refractive index difference of 0.1 or less), and the etchable film 32 which is easier to etch than the substrate 31, and The surface of the easily etchable film 32 is formed by forming a fine uneven portion 33 having a moth-eye structure having a reflection preventing function.

如此之構造於例如基材31為難蝕刻性材料,例如玻璃基板、透明導電膜、彩色濾光器等,難以直接形成微細凹凸部之時有效。 Such a structure is effective, for example, when the base material 31 is a material that is difficult to etch, such as a glass substrate, a transparent conductive film, a color filter, or the like, and it is difficult to directly form fine uneven portions.

即是,如第2實施型態般,於基材和Al2O3膜具有大的折射率差之時,雖然以將藉由水熱處理所形成之微細凹凸狀Al2O3當作蝕刻遮罩對基材進行乾蝕刻而形成微細凹凸圖案為有效用,但是於基材為難蝕刻性材料之時難以適用。 That is, as in the second embodiment, when the base material and the Al 2 O 3 film have a large refractive index difference, the fine concavo-convex Al 2 O 3 formed by hydrothermal treatment is used as an etching mask. The cover is dry-etched to form a fine concavo-convex pattern for effective use, but it is difficult to apply when the substrate is a non-etchable material.

因此,在本實施型態中,在基材31上形成由折射率與基材31接近之容易蝕刻之材料所構成之易蝕刻性膜32,對該易蝕刻性膜32,施予將藉由水熱處理所形成之微細凹凸狀Al2O3當作蝕刻遮罩之蝕刻,在易蝕刻性膜32之表面形成具有反射防止功能之蛾眼構造之微細凹凸部33。 Therefore, in the present embodiment, the etchable film 32 composed of a material which is easily etched by the refractive index close to the substrate 31 is formed on the substrate 31, and the etchable film 32 is applied by The fine concavo-convex Al 2 O 3 formed by the hydrothermal treatment is etched as an etching mask, and a fine uneven portion 33 having a moth-eye structure having an antireflection function is formed on the surface of the etchable film 32.

具體而言,如圖8所示般,形成具有反射防止功能之構件30。即是,如圖8(a)所示般,最初在難蝕刻性基材31上以適當之薄膜形成方法形成易蝕刻性膜32,接著如圖8(b)所示般,在易蝕刻性膜32表面形成Al2O3膜34。此時之Al2O3膜34之形成方法與第2實施型 態之Al2O3膜23相同,並不限定於ALD法,即使使用例如CVD法或PVD法(濺鍍法或真空蒸鍍法)等之其他方法亦可,以使用ALD法為佳。再者,Al2O3膜34之膜厚等也與第2實施型態之Al2O3膜23相同。接著,如圖8(c)所示般,對Al2O3膜34施予水熱處理,而形成微細凹凸狀Al2O3 35。此時之水熱處理條件可以進行與第1實施型態相同,微細凹凸狀Al2O3 35被形成針狀或紡錘狀。接著,如圖8(d)所示般,將微細凹凸狀Al2O3 35當作蝕刻遮罩而開始進行易蝕刻性膜32表面之乾蝕刻。而且,如圖8(e)所示般,對易蝕刻性膜32及微細凹凸狀Al2O3 35進行蝕刻,形成期待深度的微細凹凸部33。 Specifically, as shown in FIG. 8, a member 30 having a reflection preventing function is formed. That is, as shown in Fig. 8(a), the easily etchable film 32 is initially formed on the opatable substrate 31 by a suitable film formation method, and then, as shown in Fig. 8(b), the etchability is easy. An Al 2 O 3 film 34 is formed on the surface of the film 32. The method of forming the Al 2 O 3 film 34 at this time is the same as that of the Al 2 O 3 film 23 of the second embodiment, and is not limited to the ALD method, even if, for example, a CVD method or a PVD method (sputtering method or vacuum evaporation) is used. Other methods such as the method may be used, and it is preferable to use the ALD method. Further, the film thickness of the Al 2 O 3 film 34 is also the same as that of the Al 2 O 3 film 23 of the second embodiment. Next, as shown in FIG. 8(c), the Al 2 O 3 film 34 is subjected to a hydrothermal treatment to form fine concavo-convex Al 2 O 3 35. In this case, the hydrothermal treatment conditions can be the same as in the first embodiment, and the fine concavo-convex Al 2 O 3 35 is formed into a needle shape or a spindle shape. Next, as shown in FIG. 8(d), the fine concavo-convex Al 2 O 3 35 is used as an etching mask to start dry etching of the surface of the easily etchable film 32. Then, as shown in FIG. 8(e), the easily etchable film 32 and the fine uneven Al 2 O 3 35 are etched to form a fine uneven portion 33 having a desired depth.

微細凹凸部33之深度以100~1000nm為佳。再者,並非對易蝕刻性膜32全部進行蝕刻,以不對易蝕刻性膜32之下層側進行蝕刻而使其殘留為佳。此係因為確保微細凹凸部33和基材31之密接性之故。 The depth of the fine uneven portion 33 is preferably 100 to 1000 nm. In addition, it is not preferable to etch all of the easily etchable film 32 so as not to etch the lower layer side of the etchable film 32. This is because the adhesion between the fine uneven portion 33 and the substrate 31 is ensured.

本實施型態之時,因需要在中間形成易蝕刻性膜32,故較第2實施型態更費工,但是藉由因應基材31而適當選擇易蝕刻性膜32之材料,可以使基材31和易蝕刻性膜32之折射率差幾乎消除,與第2實施型態相同,不會產生由於折射率差所造成的反射,可以取得充分之反射防止效果。 In the present embodiment, since the etchable film 32 is required to be formed in the middle, it is more labor-intensive than the second embodiment. However, by appropriately selecting the material of the etchable film 32 in response to the substrate 31, the substrate can be made. The difference in refractive index between the material 31 and the etchable film 32 is almost eliminated, and as in the second embodiment, reflection due to the difference in refractive index does not occur, and a sufficient reflection preventing effect can be obtained.

具體而言,如圖9所示般,在折射率大之基材(折射率n=A)之表面存在以Al2O3(折射率n=1.6)所構成之微細凹凸部之時,在Al2O3和基材之間的反射防 止效果並不充分,但是藉由在基材和Al2O3之間設置具有接近於基材(折射率n=A)之折射率的易蝕刻性膜(折射率n=A±α),將藉由水熱處理所形成之微細凹凸狀Al2O3當作蝕刻遮罩而對易蝕刻性膜進行乾蝕刻,如圖10所示般,藉由在易蝕刻性膜轉印微細凹凸圖案,在基材上形成由折射率接近之材料所構成之微細凹凸部,故可以從空氣之折射率幾乎連續性地變化至基材之折射率。 Specifically, as shown in FIG. 9 , when a fine uneven portion composed of Al 2 O 3 (refractive index n=1.6) is present on the surface of the substrate having a large refractive index (refractive index n=A), The antireflection effect between Al 2 O 3 and the substrate is not sufficient, but an etchability having a refractive index close to the substrate (refractive index n = A) is provided between the substrate and Al 2 O 3 The film (refractive index n = A ± α), dry etching the easily etchable film by using the fine concavo-convex Al 2 O 3 formed by hydrothermal treatment as an etching mask, as shown in FIG. Since the fine concavo-convex pattern is transferred to the easily etchable film, and fine concavo-convex portions composed of a material having a refractive index close to each other are formed on the substrate, the refractive index of the substrate can be changed almost continuously from the refractive index of the air.

[其他之適用] [Others apply]

並且,本發明並不限定於上述實施型態,可做各種變形。例如,在上述實施型態中,雖然例示透鏡、半導體基板、FPD等之發光部適用本發明之情形,但是亦可適用於CMOS感測器或太陽電池等之受光部。再者,在本實施型態中,針對基材的材料、水熱處理條件、藉由水熱處理所形成之微細凹凸之深度、對基材進行乾蝕刻時之條件等,雖然例示幾個例,但是並不限定此,當然可在本發明之思想之範圍內進行各種變形。 Further, the present invention is not limited to the above-described embodiments, and various modifications can be made. For example, in the above-described embodiment, the light-emitting portion such as a lens, a semiconductor substrate, or an FPD is applied to the present invention, but it can also be applied to a light-receiving portion such as a CMOS sensor or a solar cell. In the present embodiment, the material of the substrate, the hydrothermal treatment conditions, the depth of the fine concavities and convexities formed by the hydrothermal treatment, the conditions for dry etching the substrate, and the like are exemplified by a few examples. It is to be understood that various modifications may be made without departing from the spirit and scope of the invention.

10‧‧‧具有反射防止功能之構件 10‧‧‧Members with reflection prevention

11‧‧‧基材 11‧‧‧Substrate

13‧‧‧反射防止膜 13‧‧‧Anti-reflection film

Claims (16)

一種具有反射防止功能之構件,係具備有基材,和被形成在上述基材之表面的反射防止膜的具有反射防止功能之構件,其特徵在於:上述反射防止膜係藉由以高溫之熱水或水蒸氣對利用原子層堆積法所形成之氧化鋁膜進行水熱處理,形成微細凹凸構造。 A member having a reflection preventing function is provided with a substrate and a member having an antireflection function of an antireflection film formed on a surface of the substrate, wherein the antireflection film is heated by a high temperature The aluminum oxide film formed by the atomic layer deposition method is hydrothermally treated with water or steam to form a fine concavo-convex structure. 如請求項1所記載之具有反射防止功能之構件,其中當作光學構件或裝置形成用或者平面顯示器用之基板使用。 A member having a reflection preventing function as claimed in claim 1, wherein the member is used as an optical member or a device for forming a substrate or a flat display. 如請求項1或2所記載之具有反射防止功能之構件,其中上述氧化鋁膜係藉由交互供給三甲基鋁和氧化劑而形成。 The member having the antireflection function according to claim 1 or 2, wherein the aluminum oxide film is formed by alternately supplying trimethylaluminum and an oxidizing agent. 一種具有反射防止功能之構件的製造方法,其特徵在於具有:在基材之表面藉由原子層堆積法形成氧化鋁膜之工程;和藉由高溫之熱水或水蒸氣對上述氧化鋁膜施予水熱處理而形成微細凹凸構造,使成為反射防止膜之工程。 A manufacturing method of a member having a reflection preventing function, comprising: forming an aluminum oxide film by atomic layer deposition on a surface of a substrate; and applying the aluminum oxide film by hot water or steam at a high temperature The micro-concave structure is formed by hydrothermal treatment to form an anti-reflection film. 如請求項4所記載之具有反射防止功能之構件的製造方法,其中上述氧化鋁膜係藉由交互供給三甲基鋁和氧化劑而形 成。 The method for producing a member having an antireflection function according to claim 4, wherein the aluminum oxide film is formed by alternately supplying trimethylaluminum and an oxidizing agent. to make. 一種具有反射防止功能之構件,係在基材之表面形成具有反射防止功能之微細凹凸部而構成的具有反射防止功能之構件,其特徵在於:上述微細凹凸部係在上述基材之表面形成氧化鋁膜,接著對氧化鋁膜進行水熱處理而形成微細凹凸狀氧化鋁,之後,藉由將上述微細凹凸狀氧化鋁當作蝕刻遮罩而對上述基材之表面進行乾蝕刻,並且除去上述微細凹凸狀氧化鋁而形成。 A member having a reflection preventing function is a member having a reflection preventing function formed by forming a fine uneven portion having a reflection preventing function on a surface of a substrate, wherein the fine uneven portion is oxidized on the surface of the substrate. The aluminum film is then subjected to a hydrothermal treatment to form a fine concavo-convex alumina, and then the surface of the substrate is dry-etched by using the fine concavo-convex alumina as an etching mask, and the fine particles are removed. It is formed by embossed alumina. 如請求項6所記載之具有反射防止功能之構件,其中於形成上述微細凹凸部之時所使用之氧化鋁膜係以原子層堆積法所形成。 The member having the reflection preventing function according to claim 6, wherein the aluminum oxide film used in forming the fine uneven portion is formed by an atomic layer deposition method. 如請求項6或7所記載之具有反射防止功能之構件,其中當作光學構件或裝置形成用或者平面顯示器用之基板使用。 A member having a reflection preventing function as claimed in claim 6 or 7, wherein the member is used as an optical member or a device for forming a substrate or a flat display. 一種具有反射防止功能之構件的製造方法,其特徵在於具有:在基材之表面形成氧化鋁膜之工程;藉由高溫之熱水或水蒸氣對上述氧化鋁膜施予水熱處理而形成微細凹凸狀氧化鋁之工程;及將上述微細凹凸狀氧化鋁當作蝕刻遮罩而對上述基材之表面進行乾蝕刻而在上述基材之表面形成微細凹凸部, 並且除去上述微細凹凸狀氧化鋁,形成反射防止構造之工程。 A manufacturing method of a member having a reflection preventing function, comprising: forming an aluminum oxide film on a surface of a substrate; and subjecting the aluminum oxide film to hydrothermal treatment by high-temperature hot water or steam to form fine unevenness And the surface of the base material is dry-etched by using the fine irregular aluminum oxide as an etching mask to form fine uneven portions on the surface of the substrate. Further, the fine irregular aluminum oxide is removed to form a structure for preventing the reflection. 如請求項9所記載之具有反射防止功能之構件的製造方法,其中形成上述氧化鋁膜之工程係藉由原子層堆積法而執行。 The method for producing a member having an antireflection function according to claim 9, wherein the step of forming the aluminum oxide film is performed by an atomic layer deposition method. 一種具有反射防止功能之構件,係在基材之表面形成具有反射防止功能之微細凹凸部而構成的具有反射防止功能之構件,其特徵在於:上述微細凹凸部係藉由在上述基材之表面形成具有基板之折射率之附近的折射率,且較基材更容易被蝕刻之易蝕刻性膜,在上述易蝕刻性膜之表面形成氧化鋁膜,接著對氧化鋁膜進行水熱處理而形成微細凹凸狀氧化鋁,之後將上述微細凹凸狀氧化鋁當作蝕刻遮罩而對上述易蝕刻性膜之表面進行乾蝕刻,並且除去上述微細凹凸狀氧化鋁而形成。 A member having a reflection preventing function is a member having a reflection preventing function formed by forming a fine uneven portion having a reflection preventing function on a surface of a substrate, wherein the fine uneven portion is formed on the surface of the substrate Forming an etchable film having a refractive index in the vicinity of the refractive index of the substrate and being more easily etched than the substrate, forming an aluminum oxide film on the surface of the etchable film, and then hydrothermally treating the aluminum oxide film to form a fine The uneven alumina is formed by etching the surface of the easily etchable film by using the fine irregular aluminum oxide as an etching mask, and removing the fine uneven aluminum oxide. 如請求項11所記載之具有反射防止功能之構件,其中於形成上述微細凹凸部之時所使用之氧化鋁膜以原子層堆積法所形成。 The member having the reflection preventing function according to claim 11, wherein the aluminum oxide film used in forming the fine uneven portion is formed by an atomic layer deposition method. 如請求項11或12所記載之具有反射防止功能之構件,其中上述基材為玻璃基板、透明導電膜或彩色濾光器。 A member having a reflection preventing function as claimed in claim 11 or 12, wherein the substrate is a glass substrate, a transparent conductive film or a color filter. 一種具有反射防止功能之構件的製造方法,其特 徵在於具有:在基材之表面形成具有基板之折射率之附近的折射率,且較基材更容易被蝕刻之易蝕刻性膜之工程;在上述易蝕刻性膜之表面形成氧化鋁膜之工程;藉由高溫之熱水或水蒸氣對上述氧化鋁膜施予水熱處理而形成微細凹凸狀氧化鋁之工程;及將上述微細凹凸狀氧化鋁當作蝕刻遮罩而對上述易蝕刻性膜之表面進行乾蝕刻而在上述易蝕刻性膜之表面形成微細凹凸部,並且除去上述微細凹凸狀氧化鋁,並形成反射防止構造之工程。 A manufacturing method of a member having a reflection preventing function It is characterized in that an etchable film having a refractive index in the vicinity of the refractive index of the substrate is formed on the surface of the substrate and is more easily etched than the substrate; an aluminum oxide film is formed on the surface of the etchable film. Engineering for forming fine concavo-convex alumina by hydrothermal treatment of the above-mentioned aluminum oxide film by hot water or steam of high temperature; and the above-mentioned easily etchable film by using the above-mentioned fine concavo-convex alumina as an etching mask The surface is subjected to dry etching to form fine uneven portions on the surface of the above-mentioned etchable film, and the fine uneven aluminum oxide is removed to form an antireflection structure. 如請求項14所記載之具有反射防止功能之構件的製造方法,其中形成上述氧化鋁膜之工程係藉由原子層堆積法而執行。 The method for producing a member having an antireflection function according to claim 14, wherein the step of forming the aluminum oxide film is performed by an atomic layer deposition method. 如請求項14或15所記載之具有反射防止功能之構件的製造方法,其中上述基材為玻璃基板、透明導電膜或彩色濾光器。 The method for producing a member having an antireflection function according to claim 14 or 15, wherein the substrate is a glass substrate, a transparent conductive film or a color filter.
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