CN110600567A - Total reflection glass cover plate for space solar cell and preparation method thereof - Google Patents
Total reflection glass cover plate for space solar cell and preparation method thereof Download PDFInfo
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- CN110600567A CN110600567A CN201810517083.XA CN201810517083A CN110600567A CN 110600567 A CN110600567 A CN 110600567A CN 201810517083 A CN201810517083 A CN 201810517083A CN 110600567 A CN110600567 A CN 110600567A
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- 239000011521 glass Substances 0.000 title claims abstract description 86
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000002077 nanosphere Substances 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000002356 single layer Substances 0.000 claims abstract description 20
- 238000001020 plasma etching Methods 0.000 claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000006059 cover glass Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 abstract description 12
- 238000002834 transmittance Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000002110 nanocone Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- -1 etc. Inorganic materials 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a total reflection glass cover plate for a space solar cell and a preparation method thereof. The invention belongs to the technical field of solar cells. A total reflection glass cover plate for a space solar cell is characterized in that a single-layer nanosphere is formed on the surface of the glass cover plate through a Langmuir-Blodgett method, and a moth-eye structure antireflection film is formed on the light receiving surface of the glass cover plate through etching the nanosphere. A method for preparing a total reflection glass cover plate for a space solar cell comprises the steps of forming single-layer nanospheres on the surface of a glass cover plate by a Langmuir-Blodgett method, wherein the nanospheres are used as mask plates for reactive ion etching; and etching the light receiving surface of the glass cover plate, and stopping etching when a cone with the height of 100-1000nm is formed to obtain the total reflection glass cover plate for the space solar cell, wherein the light receiving surface is provided with the moth-eye structure antireflection film. The invention can effectively reduce the reflection of the glass cover plate to incident light in the full spectrum range, has the transmittance of more than 99 percent in the full spectrum range, has high cell efficiency, simple preparation and low cost, and is suitable for mass production.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a total reflection glass cover plate for a space solar cell and a preparation method thereof.
Background
At present, borosilicate doped with 5% of cerium dioxide is mostly adopted as a glass substrate for a single solar cell cover glass, and the refractive index of the borosilicate is 1.526, so that the reflection loss of incident sunlight at an interface is 4%. The reflection loss of incident sunlight at an interface is reduced by depositing a layer of magnesium fluoride film with an anti-reflection effect on the surface of a light receiving surface. However, the single-layer antireflection film can only obtain a good antireflection effect near the central wavelength, and cannot reduce the dependence of the antireflection performance on the wavelength and the incident angle of incident light. With the wide application of multijunction gallium arsenide solar cells in spacecraft, the short-circuit current of a single cell is limited by the sub-cell with the minimum short-circuit current, and therefore an antireflection film capable of improving incident light in a full spectrum range is required.
Rayleigh in 1880 indicated by calculation that a graded multilayer refractive film system could achieve low reflectivity across the full spectrum. If the refractive index of the film is n1And n2The two mediums are continuously transited, so that an ideal antireflection film with zero reflection can be made. In recent years, the biological simulation technology is widely applied in the field of photoelectricity, the refractive index of the antireflection film with the moth-eye structure is changed along the gradient of the film thickness direction, the capture effect on incident light can be generated, and the dependence of the antireflection performance on the wavelength and the incident angle of the incident light can be reduced, so that the antireflection can be efficiently carried out in a wide waveband. Sameer Chhajed et al APPLIED PHYSICSLETTERS 93,251108, 251108(2008) report a multilayer graded antireflection film with a full nano structure, and realize a wide spectrum and 0-Low reflectivity of 90 degrees. Peichen Yu et al in adv.Mater.21,1618(2009) reported that ITO nanopillars grown on the surface of GaAs cell by oblique angle deposition method as antireflection film achieved low reflectance of 400-900nm and 0-90 degrees. However, the above method has complex process and high cost, and is not suitable for mass production.
A monomolecular film preparation technology is established by America scientist Langmuir and student K.Blodgett in the second thirty of the 20 th century, and the monomolecular film preparation technology is to have both hydrophilic head and hydrophobic tailAmphiphilic natureThe molecules are dispersed on the water surface, and gradually compressed to form a monomolecular layer, and then transferred to a solid substrate to obtain a film. This technique is called the name of the originator of the techniqueLB film technology. The monolayer film floating on the water surface is conventionally called a Langmuir film, while the film to be transfer-deposited on the substrate is called a Langmuir-Blodgett film, abbreviated as LB film. C.p. collier et al, SCIENCE 277,1978(1997), reported a method for preparing monolayer nanostructures on large area substrates using the Langmuir-Blodgett method. At present, a mature semiconductor micro-nano processing technology is developed on the basis of the method, and comprises nanowires, nano columns and the like.
Disclosure of Invention
The invention provides a total reflection glass cover plate for a space solar cell and a preparation method thereof, aiming at solving the technical problems in the prior art.
The invention forms uniformly distributed nanometer cones, also called moth eye structure antireflection film, on a flat glass cover sheet by an etching method. The refractive index of the antireflection film of the moth-eye structure changes along the thickness direction of the film in a gradient manner, thereby eliminating the discontinuity of refractive indexes between glass and air and reducing the dependence of antireflection performance on the wavelength and the incident angle of incident light. The prepared glass cover plate does not need to be plated with MgF on the surface2The antireflection film can fully utilize the spectrum, and simultaneously, the function of the original glass cover plate is kept.
The invention forms a single layer of nanospheres uniformly distributed on the surface of the glass cover plate by a Langmuir-Blodgett method. The nanospheres distributed in a single layer are used as masks for Reactive Ion Etching (RIE), the light receiving surface of the glass cover plate is etched by selecting proper gas and process parameters, the etching is stopped when a cone with the height of 100-1000nm is formed, and finally the moth-eye antireflection glass cover plate shown in the illustration is formed.
The shape of the nanometer cone can be realized by the size of the single-layer evenly distributed nanospheres prepared by the Langmuir-Blodgett method, the etching process method and parameters and the like. The effect same as that of the total reflection antireflection film with the gradual change refractive index can be achieved through optimization.
One of the purposes of the present invention is to provide a total reflection glass cover sheet for a space solar cell, which has the characteristics that the reflection of the glass cover sheet to incident light in a full spectrum range can be effectively reduced, the transmittance of an optimized anti-reflection glass cover sheet with a moth-eye structure in the full spectrum range can reach more than 99%, and the full utilization of sunlight by the space solar cell is realized.
The invention has the technical proposal that the total reflection glass cover plate for the space solar cell adopts:
a total reflection glass cover plate for a space solar battery is characterized in that: the total reflection glass cover plate for the space solar cell is formed by forming single-layer nanospheres on the surface of the glass cover plate through a Langmuir-Blodgett method and etching the nanospheres to form a moth-eye structure antireflection film on the light receiving surface of the glass cover plate.
The total reflection glass cover plate for the space solar cell can also adopt the following technical scheme:
the total reflection glass cover with the slow space for the solar cell is characterized in that: the diameter of the single-layer nanosphere formed on the surface of the glass cover plate is 20-800 nm.
The total reflection glass cover with the slow space for the solar cell is characterized in that: the substrate of the space solar cell is Ge, GaAs, InP or Si.
The total reflection glass cover with the slow space for the solar cell is characterized in that: the GaAs solar cell is a space solar cell with single-junction and multi-junction cascade, lattice matching and lattice mismatch, and reverse and forward growth.
The second purpose of the invention is to provide a preparation method of the total reflection glass cover plate for the space solar cell, which has the characteristics of simple preparation method, low cost, suitability for mass production, capability of effectively reducing the reflection of the glass cover plate to incident light in a full spectrum range, capability of ensuring that the transmittance of the optimized moth-eye structure antireflection glass cover plate in the full spectrum range can reach more than 99 percent, realization of full utilization of sunlight by the space solar cell, further improvement of cell efficiency and the like.
The preparation method of the total reflection glass cover plate for the space solar cell adopts the technical scheme that:
a method for preparing a total reflection glass cover plate for a space solar cell is characterized by comprising the following steps: the preparation method of the total reflection glass cover plate for the space solar cell is characterized in that a single-layer nanosphere is formed on the surface of the glass cover plate by a Langmuir-Blodgett method, and the nanosphere is used as a mask plate for reactive ion etching; and etching the light receiving surface of the glass cover plate, and stopping etching when a cone with the height of 100-1000nm is formed to obtain the total reflection glass cover plate for the space solar cell, wherein the light receiving surface is provided with the moth-eye structure antireflection film.
The preparation method of the total reflection glass cover plate for the space solar cell can also adopt the following technical scheme:
the total reflection glass cover plate for the space solar cell and the preparation method thereof are characterized in that: the nano-sphere of the mask is Au or Ag metal, TiO2、Al2O3Or SiO2A metal oxide.
The total reflection glass cover plate for the space solar cell and the preparation method thereof are characterized in that: the reactive ion etching gas is O2、CF4、C2ClF5、Cl2、SF6Or CClF3。
The invention has the advantages and positive effects that:
because the brand new technical scheme is adopted in the total reflection glass cover plate for the space solar cell and the preparation method thereof, compared with the prior art, the total reflection glass cover plate for the space solar cell and the preparation method thereof can effectively reduce the reflection of the glass cover plate to incident light in a full spectrum range, the transmittance of the optimized moth-eye structure antireflection glass cover plate in the full spectrum range can reach more than 99 percent, the space solar cell can fully utilize sunlight, and the cell efficiency is further improved.
Drawings
FIG. 1 is a schematic diagram of the present invention, which is used to form uniformly distributed nanoparticles on the light-receiving surface of a cover glass by LB method. FIG. 1b is a schematic top view of the structure of FIG. 1 a.
FIG. 2 is a method for manufacturing an anti-reflection cover glass with a moth-eye structure according to the present invention.
Fig. 3 is a schematic structural diagram of a single solar cell containing a "moth-eye" structure antireflection glass cover sheet according to the present invention.
Fig. 4 is the transmittance of a "moth-eye" structured antireflection glass cover sheet having a surface with cones of different heights obtained by simulation calculation.
Detailed Description
In order to further understand the contents, features and effects of the present invention, the following embodiments are illustrated and described in detail with reference to the accompanying drawings:
refer to fig. 1 through 4.
Example 1
A total reflection glass cover plate for a space solar cell is characterized in that single-layer nanospheres are formed on the surface of the glass cover plate through a Langmuir-Blodgett method, and the diameter of the single-layer nanospheres formed on the surface of the glass cover plate is 200 nm. And a moth-eye structure antireflection film is formed on the light receiving surface of the glass cover plate by etching the nanospheres. The substrate of the space solar cell is Ge, and the GaAs solar cell is a single-junction and multi-junction cascade space solar cell.
The transmittance of the glass cover plate with the optimized 'moth-eye' structure antireflection film on the surface in the spectral range of 300nm-1800nm can be improved to more than 99%.
Example 2
A method for preparing a total reflection glass cover plate for a space solar cell comprises the steps of forming single-layer nanospheres on the surface of a glass cover plate by a Langmuir-Blodgett method, wherein the nanospheres are used as mask plates for reactive ion etching; and etching the light receiving surface of the glass cover plate, and stopping etching when a cone with the height of 500nm is formed to obtain the total reflection glass cover plate for the space solar cell, wherein the light receiving surface is provided with the antireflection film with the moth-eye structure.
The nanospheres of the mask are Au or Ag metal. The reactive ion etching gas is O2. The optimized moth-eye structure antireflection film is arranged on the surface of the total reflection glass cover plate for the space solar cell, and the transmittance of the glass cover plate in the spectral range of 300nm-1800nm can be improved to more than 99%.
Example 3
A total reflection glass cover plate for a space solar cell is characterized in that a moth-eye structure antireflection glass cover plate is a single-layer nanosphere which is uniformly distributed on the surface of the glass cover plate through a Langmuir-Blodgett method, the nanosphere is used as a mask plate for Reactive Ion Etching (RIE), and etching is stopped when a cone with the height of 100-500nm is formed. The current situation of the cone can be realized by the size of the nanospheres, the technological method and parameters of etching and the like, and finally the moth-eye antireflection glass cover sheet is manufactured. The preparation method comprises the following steps:
FIG. 1 is a schematic diagram of the formation of uniformly distributed nanoparticles on the light-receiving surface of a cover glass by the LB method. In order to prevent the aggregation of the nanospheres on the surface of the glass cover plate, a chemical method is firstly adopted to make the surface of the nanospheres have positively or negatively charged polar functional groups. Then forming a single layer of uniformly distributed nanospheres on the surface of the glass cover plate by adopting an LB method. The nanosphere can be metal such as Au, Ag, etc., or TiO2、Al2O3、SiO2And the like. The diameter of the nanosphere is 20-800 nm.
First, RIE or the like is used to adjust the distance between the nanospheres to the etching direction, as shown in fig. 2. And after the distance between the nanospheres is determined, etching the glass cover plate under the nanosphere mask plate by adopting corresponding etching gas and process parameters. The nanometer cone shown in figure 2 is formed by adopting an anisotropic etching method, the curvature of the top surface of the nanometer cone can be smaller than 10nm by combining the processes, and then the residual nanometer spheres on the nanometer cone are removed by chemical etching, so that the structure shown in figure 2 is obtained. The shape of the cone in the invention can be controlled by the diameter of the nanosphere, the etching time and the like according to the process parameters.
The RIE etching gas may be O2、CF4、C2ClF5、Cl2、SF6、CClF3And the like.
The isotropic or non-isotropic etching can be accomplished with the corresponding gas mixture as needed, and the corresponding nanocones can be obtained by conditioning other process parameters. The process conditions are adjusted according to the glass cover plate, the nanosphere material and the like to obtain the optimal process parameters.
The transmittance of the glass cover plate containing the nano structure formed by the process method in the spectral range of 300nm-1800nm can reach more than 97%, and the transmittance in the full spectral range can be further improved to more than 99% by optimizing the preparation process of the nano cone (as shown in figure 4). FIG. 4 is a calculation of the results obtained for different monolayer thicknesses (10nm, 16nm, 24nm, 32nm and 40nm) for a cone of nanostructures divided into 20 layers, all "moth-eye" glass cover sheets having a transmittance of 92% better than that of glass cover sheets and containing MgF2A 94% transmittance of the antireflection film.
Figure 3 is a gallium arsenide single cell solar cell with a "moth-eye" glass cover sheet. The substrate of the gallium arsenide solar cell may be Ge, GaAs, Si, etc. The gallium arsenide solar cell comprises various single-junction and multi-junction cascade gallium arsenide solar cells such as lattice matching and lattice mismatching, reverse and forward growth, double-sided epitaxy, double-sided bonding and the like.
The gallium arsenide solar cell in the present invention is grown by MOCVD (Metal Organic Chemical Vapor Deposition) or MBE (Molecular Beam Epitaxy).
If the MOCVDD method is adopted, the N-type doping atoms of the Ge layer are As or P, the N-type doping atoms of the other layers are Si, Se, S or Te, and the P-type doping atoms are Zn, Mg or C.
If the MBE method is adopted, the N-type doping atoms of the Ge layer are As or P, the N-type doping atoms of the other layers are Si, Se, S, Sn or Te, and the P-type doping atoms are Be, Mg or C.
The antireflection film may be Al2O3/TiO2、ZnS/MgF2Etc. of
The lower electrode is an Ag, Au, Cu, Ti, Pd, Ni or Al metal electrode or a multi-layer metal electrode with the thickness of 1um-10 um.
The glass cover sheet with the nanometer moth-eye structure obtained in the embodiment has double functions of radiation resistance and antireflection film. The nanometer cone can be equivalent to a multilayer reflection film with gradually changed refractive index, so that the sunlight is fully utilized, the efficiency of the cell is further improved, and the preparation method has the positive effects of simplicity, low cost, suitability for mass production and the like.
Claims (7)
1. A total reflection glass cover plate for a space solar cell is characterized in that: the total reflection glass cover plate for the space solar cell is formed by forming single-layer nanospheres on the surface of the glass cover plate through a Langmuir-Blodgett method and etching the nanospheres to form a moth-eye structure antireflection film on the light receiving surface of the glass cover plate.
2. The total reflection cover glass for a space solar cell according to claim 1, wherein: the diameter of the single-layer nanosphere formed on the surface of the glass cover plate is 20-800 nm.
3. The total reflection glass cover sheet for a space solar cell according to claim 1 or 2, characterized in that: the substrate of the space solar cell is Ge, GaAs, InP or Si.
4. The total reflection cover glass for a space solar cell according to claim 3, wherein: the GaAs solar cell is a space solar cell with single-junction and multi-junction cascade, lattice matching and lattice mismatch, and reverse and forward growth.
5. A method for preparing a total reflection glass cover plate for a space solar cell is characterized by comprising the following steps: the preparation method of the total reflection glass cover plate for the space solar cell is characterized in that a single-layer nanosphere is formed on the surface of the glass cover plate by a Langmuir-Blodgett method, and the nanosphere is used as a mask plate for reactive ion etching; and etching the light receiving surface of the glass cover plate, and stopping etching when a cone with the height of 100-1000nm is formed to obtain the total reflection glass cover plate for the space solar cell, wherein the light receiving surface is provided with the moth-eye structure antireflection film.
6. The method for preparing a total reflection cover glass for a space solar cell according to claim 5, wherein the method comprises the following steps: the nano-sphere of the mask is Au or Ag metal, TiO2、Al2O3Or SiO2A metal oxide.
7. The method for preparing a total reflection cover glass for a space solar cell according to claim 5 or 6, wherein the method comprises the following steps: the reactive ion etching gas is O2、CF4、C2ClF5、Cl2、SF6Or CClF3。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112271227A (en) * | 2020-10-27 | 2021-01-26 | 中国电子科技集团公司第十八研究所 | Glass cover plate for improving conversion efficiency of solar cell for space |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104698512A (en) * | 2013-12-09 | 2015-06-10 | 东京毅力科创株式会社 | Member with reflection preventing function and manufacturing method thereof |
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