RU1813819C - Apparatus for semiconducting materials epitaxial layers growing - Google Patents

Abstract

Usage: in the electronics industry in the manufacture of microcircuits. The device comprises a vertical reactor. A hollow substrate holder is installed in it, inside of which substrates are placed. A perforated partition is installed under the substrate holder. In the lower part of the reactor, coaxial tubes for introducing a vapor-gas mixture (ASG) are placed along its axis. A hole is made in the center of the perforated partition, in which coaxial tubes are placed for introducing ASG m of hydrogen into the cavity of the carrier. An external coaxial tube for introducing hydrogen is connected to an annular collector located below the perforated baffle. The heterogeneity is 273% by area of the structure. 1 ill.

Description

The invention relates to equipment for building epitaxial structures from the gas phase, and can be used in the electronics industry in the manufacture of microcircuits.

The aim of the invention is to increase the uniformity of the epitaxial layers.

The drawing shows a General view of the device.

The device contains a vertical water-cooled cap 1, a reaction chamber 2, inside which a hollow substrate holder 3 is placed in the form of a multifaceted prism with substrates 4 located on its inner surface. Coaxial tubes are placed under the faces of the substrate holder 3: tube 5 for introducing hydrogen, tube 6 for input ASG. An annular collector 7 for introducing hydrogen is connected to the coaxial tube b. A perforated baffle 8 with a central hole 9 is located above the annular collector 7 for receiving coaxial tubes 5 and 6. A central hole 11 is made in the lid 10 of the reaction chamber 2 and is installed with a gap 12 to the cap 1, while the gap 12 is connected to the means discharge 13. Around the reaction chamber 2 is a heater 14.

The device operates as follows.

The substrates 4, for example, gallium arsenide, are loaded onto the inner surface of the faces of the substrate holder 3, and the reaction chamber 2 is closed with a cap

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1. Purge the reaction chamber 2 with an inert gas and hydrogen chloride. After that, the beddings 4 are heated by the heater 14 and the gas mixture and hydrogen are supplied through tubes 6 and 5 and the annular collector 7.

In the proposed device, the perforated baffle provides field velocity uniformity not over the entire cross section of the reactor, but only directly above the baffle, between the coaxial gas inlet and the inner surface of the substrate holder. In addition, due to this, the time of transients in the gas phase is reduced. The main goal - increasing the homogeneity of the epitaxial layers - is achieved by placing the coaxial input under the podpozhkoderzhatel in the Central hole of the perforated septum. The latter provides the ability to control the concentration field in the reactor (i.e., the distribution of the growth rate) by creating two

adjustable displacement zones resulting from the interaction of three gas flows: external (hydrogen - through perforation), medium (ASG - through the external

coaxial tube) and internal (hydrogen - through the internal coaxial tube). The heterogeneity of the structure over the area is 2-3%.

Claims (1)

The claims A device for growing epitaxial layers of semiconductor materials from the gas phase, comprising a vertical reactor, a hollow substrate holder installed therein for placing the substrates in its cavity, a perforated partition placed under the substrate holder, and gas input means connected to a collector located under the partition, characterized in that that, in order to increase the homogeneity of the epitaxial layers, the collector is made circular, a central hole is made in the perforated partition, and with the gas inlet means is made in in the form of coaxial tubes placed in a central hole above a perforated partition.