RU1804667C - Photon-injection thyristor - Google Patents

Description

mirrors provide positive feedback in the active (layer 5) region of the LED.

The photon injection thyristor is a laser source with two opto-transistors (Fig.2) is a p + -P-P-M-p ° -p ° -P-P-M-p + structure, where on the substrate 1, for example, layers were formed from p + -GaAs by the epitaxial method: P-Alo.35Gao.65As - 4. P-Alo.osGao.osAs - 5,

N-AlmRfiannKAs-fi p ° -G1aDe-9 pf-ftaAo-l

N-Alo.asGao.oeAs - 6. nu-GaAs - 2, pu-GaAs - 3, P-Alo.asGao.esAs - 4, P-Alo.osGao.asAs - 5, N- Alo.asGao.esAs - 6, n-GaAs - 7.

The thyristor electrodes have metal contacts: the cathode — 8, the anode — 9, and the control electrode — 10. The oxide layer 11 protects the rp junctions that go to the end surfaces of the thyristor crystal.

Substrate 1 and layers 4,5,6,2,3,4,5 form an RT-p optotransistor. Layers 6,2,3,4,5,6,7 form an n-p-p optotransistor. Layers 4,5,6 are formed by LEDs based on a double heterostructure. which are the light sources in these optotransistors. Both LEDs, turned on in the forward direction, act as emitter junctions of the thyristor, supplying minority charge carriers to its collector junction. Positive feedback between the optotransistors is provided by the optical interaction between the emitter and collector junctions. Laser output in both thyristor structures is carried out in the usual way through the mirrors 12 and 13 of the optical resonator. Thus, the introduction of positive feedback in

0

5

0 5 0 5

The active region of the LED converts the photon injection thyristor into a laser source.

Using the proposed thyristor makes it possible to simplify the construction of the discharge circuit; by eliminating the laser diode, halve the duration of the trailing edge of the pump current pulse, which is proportional to the resistance of the circuit elements, ease the thermal operation of the thyristor by half, and thereby expand its field of application;

Claims (1)

SUMMARY OF THE INVENTION A photon injection thyristor based on a multilayer heterostructure containing optotransistors, the emigrant transitions of which are LEDs, characterized in that, in order to expand the field of use by generating laser radiation, it further comprises an optical resonator including two mirrors formed on two mutually parallel faces of the heterostructure perpendicular to its layers, while the parameters of the LED and the cavity are selected from the conditions: since where Inop is the value of the threshold radiation generation current, Unep - thyristor switching voltage, R is the resistance of the circuit, including the resistance of the open (on) thyristor. Fig g