RU1412383C - Device for growing monocrytals of cesium-iodinite - Google Patents

Abstract

The invention relates to the production of crystals for infrared technology used as optical elements o Provides an increase in the yield strength of crystals while maintaining optical properties. The method involves heating a mixture containing cesium iodide with the addition of kS May “5 cesium bromide. After heating, melting is carried out for 1.0-1.5 hours.” Heating and holding the melt are carried out under continuous vacuum to a pressure of 1 “10 - 5 10 mm rToSTo, and crystal growth is carried out in a nitrogen atmosphere at a pressure of 1 -10 -1.10 mm Yield strength 200-260 g / mm is reached, 1 tab.

Description

Joint venture

with

The invention relates to growing. single crystals and can be used to obtain a material with improved mechanical properties for the manufacture of optical elements of devices operating in the infrared region of the spectrum, including passive elements of high-power CO lasers,

Single crystals of alkali halides (potassium chloride, sodium chloride, lithium fluoride) are widely used as a material for infrared technology. The use of cesium iodide, which has no transparency in the far infrared region of the spectrum, is limited due to the low yield strength, which is the main by a characteristic of the mechanical properties of an optical material o An increase in the yield strength without deterioration of optical properties makes it possible to widely use it as a material for the manufacture of optical their elements about

The aim of the invention is to increase the yield strength of crystals while maintaining optical properties

NOTE In a platinum crucible, cesium iodide salt is added in an amount of k kg, 4 wt. Cesium bromide is added, the furnace volume is vacuumized to 5 10 mm rToSto, the mixture is heated to a melting point of 621 ° C under continuous vacuum, the melt is maintained 1.5 h, then nitrogen is introduced to a pressure of 1 and a single crystal is grown

la by the known method of Kyropoulos in a nitrogen atmosphere

Similarly to the given example, cesium iodide monocrystals were grown with the addition of various amounts of cesium bromide and at various parameters of the growing process o The growing results, depending on the regimes, are presented in the table

As follows from the table, only within the specified parameters (examples 3, 5, 8, and 10) is the goal set o Going beyond the boundary conditions does not ensure the achievement of the goal with

Compared with the known, the proposed technical solution provides an increase in the yield strength of cesium iodide crystals by 1.5–2 times and by an order of magnitude in comparison with cesium iodide grown in the same

J12383. 4

conditions without the addition of cesium bromide impurities, while the optical properties are improved

Claims (1)

The claims A method of growing single crystals of cesium iodide, including heating a mixture containing cesium iodide with cesium bromide addition to melting, aging and subsequent crystal growth according to the Kyropoulos method, characterized in that, in order to increase the yield strength of the crystals while maintaining optical properties, the cerium bromide additive in an amount of 4-5 maso, heating and holding the melt for 1.0-1.5 hours are carried out under continuous vacuum to a pressure of 1-10 - 5 X rToSTo, and growth is carried out in a nitrogen atmosphere at a pressure of 1 10 - 1 10 mm Hg