RO83229B1 - Procedeu de pasivare a jonctiunilor semiconductoare mesa - Google Patents
Procedeu de pasivare a jonctiunilor semiconductoare mesaInfo
- Publication number
- RO83229B1 RO83229B1 RO108570A RO10857082A RO83229B1 RO 83229 B1 RO83229 B1 RO 83229B1 RO 108570 A RO108570 A RO 108570A RO 10857082 A RO10857082 A RO 10857082A RO 83229 B1 RO83229 B1 RO 83229B1
- Authority
- RO
- Romania
- Prior art keywords
- addition
- mesa
- chlorinated compounds
- silicon
- thermal oxide
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 3
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Inventia se refera la un procedeu de pasivare a jonctiuniilor semiconductoare mesa din siliciu utilizate pentru realizarea dispozitivelor semiconductoare de putere si înalta tensiune. Procedeul, conform inventiei, în scopul evitarii contaminarii ionice a suprafetei jonctiunilor mesa si eliminarii fluctuatiilor stocate în starile de interfata, prevede cresterea direct pe suprafasa siliciului decapat chimic a unui strat de oxid termic cu adaus de compusi clorurati de grosdime 5000..... 8000 A si acoperirea lui cu un strat de sticla de grosime aproximativ egala cu adîncimea santului mesa. în scopul obtinerii pe plachetele de siliciu a oxidului termic cu adaus de compusi clorurati, la temperaturi de 900.....1000 degree C, în acelasi cuptor de oxidare se efectueaza succesiv o oxidare uscata umeda timp de 5....6h o oxidare uscata cu adaus de compusi clorurati (HCl, CHCl3, Cl2) cu o concentratie volumica de 0,5.....1% timp de 1...2h si un tratament final pe N2 uscat timp de 15....30 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO108570A RO83229B1 (ro) | 1982-09-06 | 1982-09-06 | Procedeu de pasivare a jonctiunilor semiconductoare mesa |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO108570A RO83229B1 (ro) | 1982-09-06 | 1982-09-06 | Procedeu de pasivare a jonctiunilor semiconductoare mesa |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RO83229A2 RO83229A2 (ro) | 1984-03-15 |
| RO83229B1 true RO83229B1 (ro) | 1984-03-30 |
Family
ID=20111997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RO108570A RO83229B1 (ro) | 1982-09-06 | 1982-09-06 | Procedeu de pasivare a jonctiunilor semiconductoare mesa |
Country Status (1)
| Country | Link |
|---|---|
| RO (1) | RO83229B1 (ro) |
-
1982
- 1982-09-06 RO RO108570A patent/RO83229B1/ro unknown
Also Published As
| Publication number | Publication date |
|---|---|
| RO83229A2 (ro) | 1984-03-15 |
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